KIA-Semicon-Tech-KCB3008A
| Part # | KIA-Semicon-Tech-KCB3008A |
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120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
n
n
n
Uses advanced SGT technology
Extremely low R
DS
(on).typ=4.5
m
Ω
@Vgs=10V
Excellent gate charge x RDS(on) product(FOM)
2
.
Features
n
n
n
n
Motor Drives
SR(Synchronous Rectification)
DC/DC convertion
General purpose applications
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 6
Rev 1.0.JAN. 2020
120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KCB3008A
Package
TO-263
Brand
KIA
5.
Absolute maximum ratings
TC=25
º
C
unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-to-Source Voltage
V
DSS
85
V
T
C
=25
º
C(Silicon limited)
160
I
D
Continuous Drain Current
T
C
=25
º
C(Package limited)
T
C
=100
º
C(Silicon limited)
120
100
480
A
Pulsed drain current (T
C
= 25
°
C, t
p
limited by T
jmax
)
I
DP
E
AS
Avalanche energy, single pulse (L=0.5mH, Rg=25
Ω
)
Gate-Source voltage
60
±
20
mJ
V
V
GS
Power dissipation (TC = 25
º
C)
P
tot
220
W
º
C
Junction & Storage Temperature Range
T
J
& T
STG
-55 to
175
6.
Thermal characteristics
Parameter
Symbol
Ratings
Units
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
R
θ
JA
R
θ
JC
0.7
60
º
C/W
2 of 6
Rev 1.0.JAN. 2020
120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Symbo
l
Parameter
Conditions
Min Typ
Max
Units
Static characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=85V , V
GS
=0V ,Tj=25
º
C
V
DS
=85V , V
GS
=0V, Tj=125
º
C
V
DS
=V
GS
, I
D
=250
μ
A ,Tj=25
º
C
V
GS
=
20
V,V
DS
=0V
85
90
–
–
1
V
–
Zero Gate Voltage Drain Current
μ
A
–
5
–
Gate threshold voltage
Gate leakage current
Drain-source on-resistance
Transconductance
V
GS(th)
I
GSS
2.0
3.0
–
4.0
100
5.5
–
V
nA
m
Ω
S
–
–
–
R
DS(on)
gfs
V
GS
=10V,I
D
=50A, Tj=25
º
C
V
DS
=5V,I
D
=50A
4.5
80
Dynamic characteristics
V
GS
=0V,V
DS
=0V
F=1MHz
Gate Resistance
R
G
–
1.5
–
Ω
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
4030
545
35
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
DS
=40V,V
GS
=0V,
F=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
20
38
V
DS
=40V,Tj=25
º
C,
V
GS
=10V,R
L
=3
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
45
20
Gate Charge Characteristics
Total gate charge
Q
g
Q
gs
Q
gd
–
–
–
65
25
14
–
–
–
nC
nC
nC
V
DS
=40V,I
D
=25A,
V
GS
=10V, F=1MHz
Gate-source charge
Gate-drain charge
Diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
V
GS
=0V,I
SD
=50A
–
–
–
0.95
60
1.4
V
–
–
ns
nC
I
F
=20A
Dl
F
/dt=500A/
μ
s
Q
rr
340
3 of 6
Rev 1.0.JAN. 2020
120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 6
Rev 1.0.JAN. 2020
120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.0.JAN. 2020
120A
，
85V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.0.JAN. 2020
