KIA-Semicon-Tech-KCM9860A
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47A
，
600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking
capability without degrading performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a
drain-tosource diode with a fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
2
.
Features
n
n
n
n
n
n
Robust high voltage termination
Avalanche energy specified
Source-to-drain diode recovery time comparable to a discrete fast recovery diode
Diode is characterized for use in bridge circuits
I
DSS
and V
DS(ON)
specified at elevated temperature
Isolated mounting hole reduces mounting hardware
3.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
1 of 5
Rev 1.1 Dec. 2017
47A
，
600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
A
=25
°
C,unless otherwise noted)
Rating
Units
Parameter
Symbol
TO-220F TO-247
Gate-to-source voltage continue
V
GS
+20
-55 to150
47
V
ºC
A
Junction and storage temperature range
T
J,
T
STG
1
continuous
Drain to current
I
D
pulsed
I
DM
141
A
Single pulsed drain-to-source avalanche energy
T
J
=25 ºC
2
E
AS
720
mJ
50
417
2.78
W
Total power dissipation
Derate above 25 ºC
P
D
T
L
0.4
W/ ºC
Maximum lead temperature for soldering purposes,
1/8“ from case for 10secods
260
ºC
5.
Thermal characteristics
Parameter
Symbol
R
θ
JA
Rating
40
Unit
ºC/W
ºC/W
Thermal resistance,Junction-ambient
Thermal resistance,Junction-case
R
θ
JC
0.3
1.Drain current limited by maximum junction temperature.
2.Eas:V
DD
=100V, V
GS
=10V, I
L
=12A, L=10mH,R
G
=25
Ω
2 of 5
Rev 1.1 Dec. 2017
47A
，
600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise noted)
Parameter
Drain-source breakdown voltage
Drain-source leakage current
Gate threshold voltage
Gate-source leakage current-forward
Gate-source leakage current-reverse
Static drain-source on-resistance
Forward on-volage(1)
Reverse recovery time
Forward turn-on time
Input capacitance
Symbol
BV
DSS
I
DSS
Test Conditions
V
GS
=0V,I
DS
=250
μ
A
V
DS
=600V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
=10V,I
D
=15.6A
Min
Typ
Max
Units
600
–
–
V
–
2.0
–
–
1
μ
A
V
V
GS(th)
I
GSSF
3.0
4.0
–
100
nA
nA
m
Ω
V
I
GSSR
–
–
-100
*
R
DS(on)
–
68
81
*
V
SD
–
–
1.5
–
I
S
=20A
t
rr
t
on
–
450
**
nS
nC
d
IS/
/d
t
=100A/us
–
–
C
iss
C
oss
C
rss
t
d(on)
t
r
–
3111.9
2399.1
61.6
45.5
120.56
137.06
116.2
87.967
21.758
41.14
–
V
DS
=25V,V
GS
=0V,
f=1MHz
Output capacitance
–
–
pF
Reverse transfer capacitance
Turn-on delay time
–
–
–
–
Rise time
–
–
V
DD
=300V,I
D
=20A
ns
R
G
=25
Ω
*
Turn-off delay time
t
d(off)
t
f
–
–
Fall time
–
–
Total gate charge
Q
g
–
–
V
DS
=480V, I
D
=20A
V
GS
=10V*
Gate-source charge
Q
gs
Q
gd
–
—
—
nC
Gate-drain charge
–
Note *:Pulse test;pulse width<300us duty cycle<2%.
**:Negligible,dominated by circuit inductance.
3 of 5
Rev 1.1 Dec. 2017
47A
，
600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
T
e
st circuits and waveforms
4 of 5
Rev 1.1 Dec. 2017
47A
，
600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.1 Dec. 2017
