KIA-Semicon-Tech-KCT1808A
| Part # | KIA-Semicon-Tech-KCT1808A |
Download  | KIA-Semicon-Tech-KCT1808A |
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
Uses advanced SGT technology
Extremely low R
DS(on)
.typ=1.25m
Ω
@V
GS
=10V
Excellent gate charge x R
DS(on)
product(FOM)
2
.
Application
Motor control and drives
Battery management
DC/DC Converters
General purpose applications
3.
Pin configuration
TOLL-8
Pin
1
Function
Gate
9
Drain
2,3,4,5,6,7,8
Source
1 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KCT1808A
Package
TOLL-8
Brand
KIA
5.
Absolute maximum ratings
T
C
=25 ºC unless otherwise specified
Parameter
Symbol
V
DS
Ratings
80
Unit
V
Drain-to-Source Voltage
T
C
=25 ºC(Silicon limited)
260
A
Continuous Drain Current
T
C
=25 ºC(Package limited)
T
C
=100 ºC(Silicon limited)
I
D
240
A
170
A
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
DP
E
AS
750
A
Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)
Gate-Source voltage
2862
±20
mJ
V
V
GS
Power dissipation
P
tot
250
W
ºC
Junction & Storage Temperature Range
T
J
& T
STG
-55 to 150
6.
Thermal characteristics
Parameter
Symbol
Ratings
Units
ºC/W
ºC/W
Thermal resistance, Junction-case
Thermal resistance, junction-ambient
R
θJC
R
θJA
0.5
52
2 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Value
Unit
Parameter
Symbol
Test Condition
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA,T
j
=25°C
V
DS
=80V,V
GS
=0V,T
j
=25°C
V
DS
=64V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
80
2
–
–
–
V
V
Gate threshold voltage
V
GS(th )
3
4
–
1
μA
μA
nA
mΩ
S
Zero gate voltage drain current
Gate-source leakage current
I
DSS
–
–
10
I
GSS
–
–
100
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=50A,T
j
=25°C
V
DS
=5V,I
D
=40A
–
1.25
227
15022
2523
1303
205
54
2
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
g
fs
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
tr
–
–
–
–
V
GS
=0V, V
DS
=40V,
f=1MHz
–
–
pF
nC
–
–
–
–
V
GS
=10V, V
DS
=40V, I
D
=50A
–
–
–
46
–
–
38
–
–
132
126
153
1.85
0.8
–
–
T
j
=25°C, V
GS
=10V,
V
DS
=40V, R
L
=3Ω
ns
Turn-off delay time
Fall time
t
d(off)
t
f
–
–
–
Gate resistance
R
G
V
GS
=0V, V
DS
=0V,f=1MHz
V
GS
=0V, I
SD
=50A
–
–
Ω
V
Body Diode Forward Voltage
V
SD
–
1.2
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
t
rr
I
F
=30A, dI/dt=500A/μs
I
F
=30A, dI/dt=500A/μs
–
–
112
220
–
–
ns
Q
rr
nC
3 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9
.
T
e
st Circuit & Waveform
7 / 8
Rev 1.1
Jun. 2023
240A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8 / 8
Rev 1.1
Jun. 2023
