KIA-Semicon-Tech-KCY3406A
| Part # | KIA-Semicon-Tech-KCY3406A |
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80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
`
1.
Description
KCX3406A is an N-channel enhancement mode power MOS field effect transistor which is produced
using KIA’s LVMOS technology. The improved process and cell structure have been especially tailored to
minimize on-state resistance, provide superior switching performance.
This device is widely used in Secondary synchronous rectifier, Power Management for Inverter
Systems.
2
.
Features
n
n
n
n
n
n
80A,60V,R
DS(ON)(
typ
.
)
=8.5m
Ω
@ V
GS
=10V
SGT MOSFET
Low Gate Charge
Low Crss
Fast switching
Improved dv/dt capability
3.
Pin configuration
Pin
1,2,3
4
Function
Source
Gate
5,6,7,8
Drain
1
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6
Rev 1.0. Ma
y
.
2
022
80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KCY3406A
Package
DFN5*6
Brand
KIA
5.
Absolute maximum ratings
TC=25
℃
unless otherwise specified
Parameter
Symbol
Ratings
60
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
V
DSS
V
GSS
±
20
V
T
C
=25
°
C
80
A
Continuous Drain Current
I
D
T
C
=100
°
C
48
A
Pulsed Drain Current at VGS=10V
Power Dissipation (T
C
=25
°
C)
Derating Factor above 25
°
C
I
DM
P
D
240
A
63
W
0.5
W/
°
C
mJ
°
C
°
C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
EAS
T
J
81
-55 to 150
-55 to 150
T
STG
6.
Thermal characteristics
Parameter
Symbol
R
θ
JC
Ratings
2.0
Unit
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
°
C/W
°
C/W
R
θ
JA
62
2
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Rev 1.0. Ma
y
.
2
022
80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(TJ=25
°
C,unless otherwise notes)
Parameter
Symbol
BV
DSS
I
DSS
Conditions
Min
Typ Max
Units
Drain-to-Source Breakdown
Voltage
V
GS
=0V, I
D
=250uA
60
—
—
—
—
1
V
Drain-to-Source Leakage
Current
V
DS
=60V, V
GS
=0V
—
—
uA
nA
Gate-to-Source Leakage
Current
I
GSS
V
GS
=
±
20V, V
DS
=0V
±
100
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
=13.5A
V
GS
=4.5V, I
D
=11.5A
F=1MHz
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
8.5
13
3.0
9.5
15
—
V
m
Ω
m
Ω
Ω
Static Drain-to-Source
On-Resistance
R
DS(ON)
Gate Resistance
R
G
C
iss
C
oss
C
rss
td
(ON)
t
rise
1.8
1065
430
22
Input Capacitance
—
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
F=1.0MHz
，
VGS=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
—
VDS=30V
—
8
—
V
DD
=30V, V
GS
=10V
，
R
G
=3
Ω
,I
D
=13.5A
(Note2,3)
54
—
Turn-Off Delay Time
Fall Time
td
(OFF)
tf
all
19
—
8.8
16.8
5.9
2.7
—
—
Total Gate Charge
Q
g
—
V
DD
=48V,V
GS
=10V,
I
D
=13.5A
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Continuous Source Current
[2]
Pulsed Source Current
[2]
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Q
gs
Q
gd
I
SD
—
(Note2,3)
—
80
240
1.4
—
Integral Reverse P-N Junction
Diode in the MOSFET
I
SM
—
A
V
SD
trr
I
S
=13.5A, V
GS
=0V
—
V
52
ns
nC
I
S
=13.5A,V
GS
=0V,
dIF/dt=100A/us (Note2)
Qrr
0.05
—
Notes:
1.L=0.5mH, VDD=50V, RG=10
Ω
,starting T
J
=25
°
C
；
2.Pulse Test
：
Pulse width
≤
300us,Duty cycle
≤
2%
；
3.Essentially independent of operating temperature.
3
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Rev 1.0. Ma
y
.
2
022
80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4
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6
Rev 1.0. Ma
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.
2
022
80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5
/
6
Rev 1.0. Ma
y
.
2
022
80A
，
60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9
.
T
e
st Circuits and Waveforms
6
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