KIA-Semicon-Tech-KIA12N65H
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12A
，
650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
The KIA12N65H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts based on half bridge topology.
2
.
Features
n
n
n
n
n
R
DS(on)
= 0.63
Ω
@ V
GS
= 10 V
Low gate charge ( typical 52nC)
Fast switching capability
avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 5
Rev 1.1 JAN 2014
12A
，
650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
C
= 25 ºC , unless otherwise specified)
Units
V
Parameter
Drain-source voltage
Symbol
V
DSS
Rating
650
V
Drain-source voltage
T
C
=25 ºC
Drain current continuous
T
C
=100 ºC
V
GSS
±
30
12.0
*
7.4
*
A
A
A
mJ
mJ
V/ns
W
I
D
Drain current pulsed
(note 1)
I
DP
E
AR
E
AS
48.0
*
Repetitive (note
1)
Single pulse (note 2)
23.1
865
4.5
54
Avalanche energy
Peak diode recovery dv/dt
(note 3)
dv/dt
T
C
=25 ºC
derate above 25 ºC
Total power dissipation
P
D
0.43
+150
-55~+150
W/
º
C
ºC
ºC
Junction temperature
Storage temperature
T
J
T
STG
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Parameter
Symbol
Rating
62.5
–
Unit
ºC/W
ºC/W
ºC/W
Thermal resistance,Junction–ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
R
thJA
R
thCS
R
thJC
2.33
2 of 5
Rev 1.1 JAN 2014
12A
，
650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Symbol
Conditions
Min Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=650V ,V
GS
=0V
V
DS
=520V ,T
C
=125ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250
μ
A
650
–
–
–
–
–
–
1
10
100
-100
–
V
μ
A
μ
A
nA
nA
–
–
–
–
–
Zero gate voltage drain current
Forward
Gate-body leakage current
Reverse
Breakdown voltage temperature coefficient
△
BV
DSS
/
△
T
J
I
GSS
0.7
V/°C
On characteristics
Gate threshold voltage
Static drain-source on-resistance
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10V,I
D
=6.0A
2.0
–
–
4.0
V
Ω
0.63 0.75
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
fall time
Total gate charge
C
iss
C
oss
C
rss
–
–
–
1850
180
20
–
–
–
pF
pF
pF
V
DS
=25V,V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
–
30
90
140
90
52
8.5
20
–
–
–
–
–
–
–
ns
ns
ns
V
DD
=325V,I
D
=12.0A,
R
G
=25
Ω
(note4,5)
ns
nC
nC
nC
V
DS
=520V,I
D
=12.0A
V
GS
=10V,(note4,5)
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
V
SD
I
SD
I
SM
t
rr
V
GS
=0V,I
SD
=12.0A
–
–
–
–
–
–
–
1.4
12.0
48.0
–
V
A
A
I
SD
=12.0A
dl
SD
/dt=100A/
μ
s
(note4)
430
ns
Reverse recovery charge
Q
rr
–
5.0
–
μ
C
Note:1. repetitive rating :pulse width limited by maximum junction temperature
2. L=11mH, I
AS
=12.0A,V
DD
=50V,R
G
=25
Ω
,staring T
J
=25ºC
3. I
SD
<12.0A,di/dt<200A/
μ
s,V
DD
<BV
DSS
,staring T
J
=25 ºC
4. Pulse test: pulse width<300
μ
s,duty cycle<2%
5. Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
12A
，
650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
T
e
st circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
12A
，
650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.1 JAN 2014
