KIA-Semicon-Tech-KIA18N50HF
| Part # | KIA-Semicon-Tech-KIA18N50HF |
Download  | KIA-Semicon-Tech-KIA18N50HF |
18A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1.
Description
The KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high
voltage, high speed power switching applications such as high efficiency switched mode power supplies,
active power factor correction.
2
.
Features
n
n
n
n
n
R
DS(on)
=0.25
Ω
@ V
GS
=10V
Low gate charge ( typical 50nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 5
Rev 1.1 JAN 2014
18A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
C
= 25 ºC , unless otherwise notes)
Ratings
TO220F TO247
Units
Parameter
Symbol
V
V
Drain-source voltage
Gate-source voltage
T
C
=25ºC
Drain current continuous
T
C
=100ºC
V
DSS
V
GSS
500
+30
18.0
*
10.8
*
72
*
23.5
990
18.0
10.8
72
A
A
A
mJ
mJ
V/ns
W
I
D
Drain current pulsed (note1)
I
DP
E
AR
E
AS
Repetitive (note1)
Single pulse (note2)
23.5
990
Avalanche energy
Peak diode recovery dv/dt (note 3)
dv/dt
4.5
T
C
=25ºC
derate above 25ºC
38.5
0.3
235
Total power dissipation
P
D
1.88
W/
º
C
ºC
ºC
Junction temperature
Storage temperature
T
J
T
STG
+150
-55~+150
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Ratings
TO220F
Parameter
Symbol
Units
TO247
40
Thermal resistance,junction-ambient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
R
thJA
R
thCS
R
thJC
62.5
–
ºC/W
–
3.3
0.52
2 of 5
Rev 1.1 JAN 2014
18A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Off characteristics
Symbol
Conditions
Min Typ
Max Units
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=500V ,V
GS
=0V
V
DS
=400V ,T
C
=125 ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
TO220F
500
–
–
–
–
–
–
1
10
100
-100
V
–
–
–
–
μ
A
μ
A
nA
nA
Zero gate voltage drain current
Forward
Gate-body leakage current
Reverse
I
GSS
0.6
0.5
Breakdown voltage temperature coefficient
△
BV
DSS
/
△
T
J
I
D
=250
μ
A
–
–
V/
°
C
TO247
On characteristics
Gate threshold voltage
Static drain-source on-resistance
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10V,I
D
=9A
3.0
–
–
5.0
V
Ω
0.25 0.32
Dynamic characteristics
Input capacitance
C
iss
C
oss
C
rss
–
–
–
2500
400
40
–
–
–
pF
pF
pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
–
70
190
100
100
50
–
–
–
–
–
–
–
ns
ns
ns
V
DD
=250V,I
D
=18.0A,
R
G
=25
Ω
(note4,5)
ns
nC
nC
nC
V
DS
=400V,I
D
=18.0A ,
V
GS
=10V (note4,5)
Gate-source charge
Gate-drain charge
Drain-source diode characteristics
14
22
TO220F
TO247
1.5
1.4
V
GS
=0V,I
S
D
=18.0A
Drain-source diode forward voltage
V
SD
–
–
V
Continuous drain-source current
Pulsed drain-source current
I
SD
I
SM
–
–
–
–
18.0
72
A
A
I
SD
=18.0A
dl
SD
/dt=100A/
μ
s
Reverse recovery time
t
rr
–
550
–
ns
Reverse recovery charge
Q
rr
–
5.5
–
μ
C
(note4)
Note:1 Repetitive rating: pulse width limited by maximum junction temperature
2. L=5.5mH,I
AS
=18.0A,V
DD
=50V,R
G
=25
Ω
,staring T
J
=25ºC
3. I
SD
<18.0A,di/dt<200A/
μ
s, V
DD
<BV
DSS
, staring T
J
=25 ºC
4. Pulse test: pulse width<300
μ
s,duty cycle<2%
5. Essentially independent of operating temperature
3 of 5
Rev 1.1 JAN 2014
18A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
T
e
st circuits and waveforms
4 of 5
Rev 1.1 JAN 2014
18A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.1 JAN 2014
