KIA-Semicon-Tech-KIA2302

3.0A

，

20V  

2302  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Features  





V

DS

=20V,R

DS(on)

=45mΩ(typ.)@V

GS

=4.5V,I

D

=3.0A  

V

DS

=20V,R

DS(on)

=55mΩ(typ.)@V

GS

=2.5V,I

D

=2.0A  

2.Symbol  

Pin  

1

Function  

Gate  

2

Source  

Drain  

3

3.

Absolute maximum ratings  

Parameter  

Drain-source voltage  

Symbol  

Rating  

20  

Units  

V

V

DS  

V

GS  

V

Gate-source voltage  

+8  

Drain current continuous (T

J

=150 ºC)  

Pulsed drain current

a  

T

A

=25

°

C  

I

D  

I

DM  

I

S  

3.0  

10  

A

Continuous source current (diode conduction)  

1.0  

Power dissipation  

T

A

=25

°

C  

P

D  

1.0  

W

Junction and storage temperature range  

T

J ,

T

STG  

-55 to150  

ºC  

Units  

ºC/W  

Parameter  

Symbol  

R

thJA  

Rating  

156  

Thermal Resistance from Junction to Ambient(t ≤5s)  

1 of 5  

Rev 1.1 JAN 2014  

3.0A

，

20V  

2302  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Drain-source breakdown voltage  

Gate threshold voltage  

Symbol  

V

(BR)DSS  

V

GS(th)  

I

GSS  

Test Conditions  

V

GS

=0V,I

D

=250μA  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=+8V, V

DS

=0V  

V

DS

=16V, V

GS

=0V  

V

GS

=4.5V,I

D

=3.0A  

V

GS

=2.5V,I

D

=2.0A  

V

DS

=5V, I

D

=-3.0A  

V

GS

=0V,I

S

=1.0A  

Min  

Typ  

Max  

Units  

20  

–

–

V

0.5  

–

–

1.0  

V

Gate- body leakage  

–

+100  

nA  

uA  

Zero gate voltage drain current  

I

DSS  

–

–

1

–

45  

55  

8

50  

Static drain-source on-resistance

a  

R

DS(on)  

mΩ  

–

65  

Forward transconductance

a  

Diode forward voltage  

Total gate charge

b  

Gate-source charge

b  

Gate-drain charge

b  

Input capacitance

b  

Output capacitance

b  

Reverse transfer capacitance

b  

Turn-on delay time

b  

Rise time

b  

gfs  

V

SD  

Q

g  

–

–

S

V

–

–

1.3  

–

5.4  

1.1  

0.7  

300  

120  

85  

12  

84  

43  

18  

–

–

–

–

–

–

–

–

–

–

V

DS

=10V, V

GS

=4.5V  

Q

gs  

Q

gd  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

nC  

pF  

I

D

=

3.0A  

–

–

V

DS

=10V,V

GS

=0V,  

f=1MHz  

–

–

–

–

V

DD

=10V, I

D

=3.0A,  

R

G

=6Ω, V

GEN

=4.5V  

ns  

Turn-off delay time

b  

Fall time

b  

t

d(off)  

t

f  

–

–

Notes :  

a. Pulse

 

Test : Pulse Width < 300µs, Duty Cycle ≤2%.  

b.Guaranteed by design, not subject to production testing.  

2 of 5  

Rev 1.1 JAN 2014  

3.0A

，

20V  

2302  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5

.

T

est circuits and waveforms  

3 of 5  

Rev 1.1 JAN 2014  

3.0A

，

20V  

2302  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4 of 5  

Rev 1.1 JAN 2014  

3.0A

，

20V  

2302  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 5  

Rev 1.1 JAN 2014