KIA-Semicon-Tech-KIA2806AP

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

0

1

.

Features  



R

DS(on)

=3.5mΩ

（

typ.

）

@ V

GS

=10V  

100% avalanche tested  







Reliable and rugged  

Lead free and green device available

（

RoHS Compliant

）  

2

.

Applications  







Switching application  

Power management for inverter systems  

UPS  

3.Symbol  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 6  

Rev 1.7 Mar. 2019  

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Absolute maximum ratings  

(T

A

=25

°

C,unless otherwise noted)  

Rating  

Units  

TO-220/263 TO-247/3P  

Parameter  

Symbol  

Drain-source voltage  

V

DSS  

V

GSS  

T

J  

60  

+25  

V

V

Gate-source voltage  

Maximum junction temperature  

Storage temperature range  

Diode continuous forward current  

175  

ºC  

ºC  

A

T

STG  

I

S  

-55 to175  

150  

T

C

=25ºC  

T

C

=25ºC  

T

C

=100ºC  

T

C

=25ºC  

L=1mH  

150  

A

3

Continuous drain current  

I

D  

105  

A

4

Pulse drain current*  

I

DM  

580  

A

5

Avalanche energy,single pulsed  

E

AS  

1200  

mJ  

T

C

=25 ºC  

T

C

=100ºC  

230  

115  

330  

165  

Maximum power dissipation  

P

D  

W

5.

Thermal characteristics  

Parameter  

Symbol  

R

θJA  

Rating  

62.5  

Unit  

Thermal resistance,Junction-ambient  

Thermal resistance,Junction-case  

ºC/W  

ºC/W  

R

θJC  

0.65  

2 of 6  

Rev 1.7 Mar. 2019  

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Symbol  

BV

DSS  

Test Conditions  

V

GS

=0V,I

DS

=250μA  

V

DS

=48V, V

GS

=0V  

T

J

=85

°

C  

Min  

Typ  

Max  

Units  

Drain-source breakdown voltage  

60  

–

–

V

–

–

1

Zero gate voltage drain current  

I

DSS  

μA  

–

–

10  

4.0  

+100  

4.5  

–

Gate threshold voltage  

Gate leakage current  

Drain-source on-state resistance  

Gate resistance  

V

GS(th)  

I

GSS  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=+25V, V

DS

=0V  

V

GS

=10V,I

D

=60A  

V

DS

=0V, V

GS

=0V,f=1MHz  

I

SD

=60A, V

GS

=0V  

2.0  

3.0  

–

V

nA  

mΩ  

Ω

–

–

–

–

1

R

DS(on)  

3.5  

0.7  

0.8  

R

g  

1

Diode forward voltage  

V

SD  

1.2  

V

Reverse recovery time

2  

Reverse recovery charge

2  

Input capacitance

2  

Output capacitance

2  

Reverse transfer capacitance

2  

Turn-on delay time

2  

Rise time

2  

t

rr  

Q

rr  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

–

–

–

–

–

–

–

–

–

–

–

30  

50  

–

–

nS  

nC  

I

F

=60A ,V

DD

=50V  

dl

SD

/dt=100A/μs  

4376  

857  

334  

28  

–

V

DS

=25V,V

GS

=0V,  

f=1MHz  

–

pF  

–

–

18  

–

V

DD

=30V, I

DS

=60A,  

R

G

=25Ω,V

GS

=10V  

ns  

Turn-off delay time

2  

Fall time

2  

t

d(off)  

t

f  

42  

–

54  

–

Total gate charge

2  

Gate-source charge

2  

Gate-drain charge

2  

Q

g  

130  

24  

–

V

DS

=48V, V

GS

=10V  

I

DS

=60A  

Q

gs  

Q

gd  

—  

—  

nC  

47  

Note:1:Pulse test;pulse width<300us duty cycle<2%.  

2.Guaranteed by design,not subject to production testing.  

3.Package limitation current is 75A,Calculated continuous current based on maximum allowable  

junction temperature.  

4:Repetitive rating,pulse width limited by junction temperature.  

5:Starting TJ=25ºC,L=1mH.  

3 of 6  

Rev 1.7 Mar. 2019  

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

T

est circuits and waveforms  

4 of 6  

Rev 1.7 Mar. 2019  

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 6  

Rev 1.7 Mar. 2019  

150A

，

60V  

2806A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 6  

Rev 1.7 Mar. 2019