KIA-Semicon-Tech-KIA2808AH

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Features  

n

R

DS(on)

=4.0m

Ω

（

typ.

）

@ V

GS

=10V  

100% avalanche tested  

n

n

n

Reliable and rugged  

Lead free and green device available

（

RoHS Compliant

）  

2

.

Applications  

n

n

Switching application  

Power management for inverter systems  

3.Symbol  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 6  

Rev 1.2 Nov. 2016  

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Absolute maximum ratings  

(T

A

=25

°

C,unless otherwise noted)  

Rating  

Units  

Parameter  

Symbol  

TO-220/  

TO-263  

TO-247/  

TO-3P  

Drain-source voltage  

V

DSS  

V

GSS  

T

J  

80  

V

V

Gate-source voltage  

+25  

175  

Maximum junction temperature  

Storage temperature range  

Diode continuous forward current  

ºC  

ºC  

A

T

STG  

I

S  

-55 to175  

150  

T

C

=25ºC  

T

C

=25ºC  

T

C

=100ºC  

T

C

=25ºC  

L=0.5mH  

T

C

=25 ºC  

T

C

=100ºC  

150  

A

Continuous drain current  

I

D  

114  

A

Pulse drain current*  

I

DM  

660**  

1.1***  

A

Avalanche energy,single pulsed  

E

AS  

J

178  

89  

214  

107  

W

W

Maximum power dissipation  

P

D  

Note:* Repetitive

 

rating;pulse width limited by junction temperature  

** Drain current is limited by junction temperature  

***VD=64V  

5.

Thermal characteristics  

Parameter  

Symbol  

R

θ

JA  

Rating  

62.5  

0.7  

Unit  

Thermal resistance,Junction-ambient  

Thermal resistance,Junction-case  

ºC/W  

ºC/W  

R

θ

JC  

2 of 6  

Rev 1.3 Nov. 2016  

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Symbol  

BV

DSS  

Test Conditions  

V

GS

=0V,I

DS

=250

μ

A  

V

DS

=80V, V

GS

=0V  

T

J

=85

°

C  

Min  

Typ  

Max  

Units  

Drain-source breakdown voltage  

80  

–

–

V

–

–

1

Zero gate voltage drain current  

I

DSS  

μ

A  

–

–

10  

4.0  

+100  

4.5  

–

Gate threshold voltage  

Gate leakage current  

Drain-source on-state resistance  

Gate resistance  

V

GS(th)  

I

GSS  

V

DS

=V

GS

, I

D

=250

μ

A  

V

GS

=+25V, V

DS

=0V  

V

GS

=10V,I

D

=85A  

V

DS

=0V, V

GS

=0V,f=1MHz  

I

SD

=85A, V

GS

=0V  

2.0  

3.0  

–

V

nA  

m

Ω  

Ω

–

–

–

–

*

R

DS(on)  

4.0  

1.8  

0.8  

R

g  

*

Diode forward voltage  

V

SD  

1.2  

V

Reverse recovery time  

Reverse recovery charge  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

t

rr  

Q

rr  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

–

–

–

–

–

–

–

–

–

–

–

30  

52  

–

–

nS  

nC  

I

SD

=85A ,  

dl

SD

/dt=100A/

μ

s  

6109  

995  

530  

28  

–

V

DS

=25V,V

GS

=0V,  

f=1MHz  

–

pF  

–

–

18  

–

V

DD

=40V, I

DS

=85A,  

ns  

R

G

=6

Ω

,V

GS

=10V  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

42  

–

54  

–

Total gate charge  

Gate-source charge  

Gate-drain charge  

Q

g  

152  

25  

–

V

DS

=64V, V

GS

=10V  

I

DS

=85A  

Q

gs  

Q

gd  

—  

—  

nC  

53  

Note*:Pulse test;pulse width<300us duty cycle<2%.  

3 of 6  

Rev 1.3 Nov. 2016  

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

T

e

st circuits and waveforms  

4 of 6  

Rev 1.3 Nov. 2016  

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 6  

Rev 1.3 Nov. 2016  

150A

，

80V  

2808A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 6  

Rev 1.3 Nov. 2016