KIA-Semicon-Tech-KIA2N60HP
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2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for
high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
2
.
Features
n
n
n
n
n
n
R
DS(ON)
=4.1
Ω
@V
GS
=10V.
Low gate charge (typical 9nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 6
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
C
= 25ºC, unless otherwise noted)
Rating
220
600
±
30
2.0
1.35
8
4.4
120
4.5
55.5
0.44
+150
Parameter
Symbol
Units
252/251
220F
Drain-source voltage
Gate-source voltage
T
C
=25ºC
Drain current continuous
T
C
=100ºC
V
DSS
V
GSS
V
V
A
A
A
2.0*
1.35*
8*
2.0*
1.35*
8*
I
D
Drain current pulsed (note1)
I
DP
E
AR
E
AS
Repetitive (note1)
Single pulse (note2)
Peak diode recovery dv/dt (note3)
mJ
mJ
V/ns
W
W/ ºC
ºC
Avalanche Enlsed
dv/dt
T
C
=25ºC
Derate above 25ºC
44
0.35
23.6
0.19
Total power dissipation
P
D
Junction temperature
Storage temperature
T
J
T
STG
-50~+150
ºC
*Drain current limited by maximum junction temperature.
5.
Thermal characteristics
Rating
Parameter
Symbol
Unit
252/251
220
220F
Thermal resistance,Junction-amient
Thermal resistance,case-to-sink typ.
Thermal resistance,Junction-case
R
thJA
R
thCS
R
thJC
62.5
—
62.5
62.5
—
ºC/W
ºC/W
ºC/W
0.5
2.87
2.25
5.3
2 of 6
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
C
= 25 ºC, unless otherwise noted)
Parameter
Off characteristics
Symbol
Test conditions
Min
Typ Max Unit
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
C
=125ºC
V
GS
=30V, V
DS
=0V
V
GS
=-30V,V
DS
=0V
600
–
–
–
–
–
–
1
10
100
-100
V
–
–
–
–
μ
A
μ
A
nA
nA
Zero gate voltage drain current
Forward
Reverse
Gate-body leakage
current
I
GSS
Breakdown voltage temperature
coefficient
△
BV
DSS
/
△
T
J
I
D
=250
μ
A
–
0.7
–
V/ ºC
On characteristics
Gate threshold voltage
Static drain-source on- resistance
Dynamic characteristics
Input capacitance
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
I
D
=250
μ
A
V
GS
=10V,I
D
=1.0A
2.0
–
–
4.0
5.0
V
Ω
4.1
C
ISS
C
OSS
C
RSS
–
–
–
200
20
4
–
–
–
pF
pF
pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Output capacitance
Reverse transfer capacitance
Switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
–
–
–
–
–
–
–
10
25
25
30
9
–
–
–
–
–
–
–
ns
ns
ns
V
DD
=300V,I
D
=2.0A,
R
G
=25
Ω
(note4,5)
ns
nC
nC
nC
V
DS
=480V,I
D
=2.0A
V
GS
=10V (note4,5)
1.5
4.0
Drain-source diode characteristics
drain-source diode forward voltage
Continuous drain-source current
Pulsed drain-source current
Reverse recovery time
Reverse recovery charge
V
SD
I
SD*
I
SM*
t
RR
V
GS
=0V,I
SD
=2.0A
–
–
–
–
1.4
2.0
8.0
–
V
A
A
ns
μ
C
230
1.0
I
SD
=2.0A
dI
SD
/dt=100A/
μ
s (note4)
Q
RR
–
Notes:1.repetitive rating:pulse width limited by maximum junction temperature
2.L=60mH,I
AS
=2.0A,V
DD
=50V,R
G
=25
Ω
,starting T
J
=25ºC
3.I
SD
<2.0A,di/dt<200A/
μ
s,V
DD
<BV
DSS
,starting T
J
=25ºC
4.Pulse test:pulse width<300
μ
s,duty cycle<2%
5.Essentially independent of operating temperature
3 of 6
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Typical characteristics
4 of 6
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.1 JAN 2014
2.0A, 600V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.1 JAN 2014
