KIA-Semicon-Tech-KIA3510AB

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Features  

n

R

DS(on)

=9m

Ω

（

typ.

）

@ V

GS

=10V  

100% avalanche tested  

n

n

n

Reliable and rugged  

Lead free and green device available

（

RoHS Compliant

）  

2

.

Applications  

n

n

Switching application  

Power management for inverter systems  

3.Symbol  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 6  

Rev 1.2 Apr 2015  

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Absolute maximum ratings  

(T

A

=25

°

C,unless otherwise noted)  

Rating  

Units  

Parameter  

Symbol  

To-220/263  

To-252  

Drain-source voltage  

V

DSS  

V

GSS  

T

J  

100  

±

25  

175  

V

V

Gate-source voltage  

Maximum junction temperature  

Storage temperature range  

º

C  

º

C  

A

T

STG  

-55 to175  

T

C

=25

º

C  

T

C

=100

º

C  

T

C

=25

º

C  

75  

51  

65  

44  

3

Continuous drain current  

I

D  

A

4

Pulsed drain current  

Avalanche current  

Avalanche energy  

I

DP  

219  

30  

A

5

I

AS  

A

5

E

AS  

225  

166  

83  

mJ  

W

W

T

C

=25

º

C  

T

C

=100

º

C  

Maximum power dissipation  

P

D  

5.

Thermal characteristics  

Parameter  

Symbol  

R

θ

JA  

Rating  

62.5  

0.9  

Unit  

º

C/W  

º

C/W  

Thermal resistance,Junction-ambient  

Thermal resistance,Junction-case  

R

θ

JC  

2 of 6  

Rev 1.2 Apr 2015  

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Symbol  

BV

DSS  

Test Conditions  

V

GS

=0V,I

DS

=250

Μ

a  

V

DS

=80V, V

GS

=0V  

T

J

=125

°

C  

Min  

Typ  

Max  

Units  

Drain-source breakdown voltage  

100  

–

–

–

V

–

–

1

Zero gate voltage drain current  

I

DSS  

μ

A  

–

20  

Gate threshold voltage  

Gate leakage current  

V

GS(th)  

I

GSS  

V

DS

=V

GS

, I

D

=250

μ

A  

V

GS

=+25V, V

DS

=0V  

V

GS

=10V,I

DS

=50A  

(TO-220TO-263)  

V

GS

=10V,I

DS

=50A  

(TO-252)  

2.0  

–

3.0  

–

4.0  

+100  

V

nA  

–

9

9

11  

14  

1

Drain-source on-state resistance  

R

DS(on)  

m

Ω  

Gate resistance  

R

g  

V

DS

=0V, V

GS

=0V,f=1MHz  

–

–

1.2  

–

–

Ω

1

Diode forward voltage  

V

SD  

I

SD

=50A, V

GS

=0V  

1.3  

V

Reverse recovery time  

Reverse recovery charge  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

t

rr  

Q

rr  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

–

–

–

–

–

–

–

–

–

–

–

46  

86  

–

–

nS  

nC  

I

SD

=50A ,  

dl

SD

/dt=100A/

μ

s  

2946  

339  

179  

15  

–

V

DS

=25V,V

GS

=0V,  

f=1MHz  

–

pF  

–

–

108  

51  

–

V

DD

=50V,I

DS

=30A,  

ns  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

–

R

G

=6.8

Ω

,V

GS

=10V  

59  

–

Total gate charge  

Gate-source charge  

Gate-drain charge  

Q

g  

60  

–

V

DS

=50V,V

GS

=10V  

I

DS

=30A  

Q

gs  

Q

gd  

13.7  

22.8  

—  

—  

nC  

Note : 1. Pulse test; pulse width<300us duty cycle<2%.  

2. Guaranteed by design, not subject to production testing.  

3. Package limitation current is 55A.  

4. Repetitive rating, pulse width limited by max junction temperature.  

5. Starting T

J

=25

º

C, L=0.5mH, I

AS

=30A.  

3 of 6  

Rev 1.2 Apr 2015  

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

T

est circuits and waveforms  

4 of 6  

Rev 1.2 Apr 2015  

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 6  

Rev 1.2 Apr 2015  

75A

，

100V  

3510A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 6  

Rev 1.2 Apr 2015