KIA-Semicon-Tech-KIA50N06CD
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50A 60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
General Description
KIA50N06C is an N-channel enhancement mode power Mosfet field effect transistor which is produced
using KIA
’
s LVMosfet technology.the improved process and cell structure have been especially tailored to
minimize on-state resistance,provide superior switching performance. This device is widely used in
UPS,Power Management for Inverter Systems.
2
.
Features
n
n
n
n
n
50A, 60V, R
DS
(on) typ. = 11m
Ω
(typ.)@V
GS
= 10 V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 5
Rev 1.1 Sep 2019
50A 60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KIA50N06CD
KIA50N06CP
Package
TO-252
Brand
KIA
TO-220
KIA
5.
Absolute maximum ratings
(T
C
= 25
º
C , unless otherwise noted)
Ratings
Units
Symbol
V
DSS
I
D
Parameter
TO-252
TO-220
Drain-Source Voltage
60
50
V
A
Drain Current -Continuous (T
C
= 25
º
C)
-Continuous (T
C
= 100
º
C)
30
A
I
DM
Drain Current
-Pulsed
Gate-Source Voltage
200
±
20
405
A
V
GSS
E
AS
V
(Note 1)
Single Pulsed Avalanche Energy
mJ
W
90
110
Power Dissipation (T
C
= 25
º
C)
P
D
-Derate above 25
º
C
0.72
0.88
W/
º
C
Operating and Storage Temperature Range
-55 to +150
º
C
T
J
,T
STG
6.
Thermal Characteristics
Ratings
Symbol
Parameter
Units
TO-252
1.39
TO-220
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.14
62.5
º
C /W
º
C /W
62.5
2 of 5
Rev 1.1 Sep 2019
50A 60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7.
Electrical characteristics
(T
C
= 25
º
C , unless otherwise noted)
Test Conditions
Min Typ
Max Units
Symbol Parameter
Off Characteristics
B
VDSS
I
DSS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
V
GS
= 0 V, I
D
= 250 uA
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±
20 V, V
DS
= 0 V
60
—
—
—
—
—
1
V
uA
nA
I
GSS
—
±
100
On Characteristics
V
GS(th)
R
DS(on)
R
G
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
V
GS
= 10 V, I
D
= 20 A
f = 1.0 MHz
1.1
—
1.6
11
2.5
13
V
m
Ω
Ω
Static Drain-Source On-Resistance
Gate Resistance
—
3.5 —
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
2450
170
—
—
—
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
130
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
15
72
—
—
—
—
—
—
—
ns
ns
V
DD
= 30 V,V
GS
=10V,
I
D
= 30 A, R
G
= 25
Ω
(Note2.3)
180
79
ns
ns
Q
g
Q
gs
Q
gd
52
nC
nC
nC
V
DD
= 48 V, I
D
= 60A,
V
GS
= 10 V
(Note 2,3)
11
12
Drain-Source Diode Characteristics and Maximum Ratings
Integral Reverse P-N
Junction Diode in the
MOSFET
I
S
Continuous Source Current
Pulsed Source Current
—
—
—
—
—
—
—
50
200
1.4
—
A
A
I
SM
V
SD
t
rr
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 20 A
—
V
Reverse Recovery Time
Reverse Recovery Charge
20
0.02
ns
uC
V
GS
= 0 V, I
S
= 30 A,
dI
F
/ dt = 100 A/us
(Note 4)
Qrr
—
Notes:
1. L = 10mH, V
DD
= 50V, R
G
= 10
Ω
, Starting T
J
= 25
°
C
2. Pulse Test : Pulse width
≤
300us, Duty cycle
≤
2%
3. Essentially independent of operating temperature
3 of 5
Rev 1.1 Sep 2019
50A 60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 5
Rev 1.1 Sep 2019
50A 60V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.1 Sep 2019
