KIA-Semicon-Tech-KIA5N50HD
| Part # | KIA-Semicon-Tech-KIA5N50HD |
Download  | KIA-Semicon-Tech-KIA5N50HD |
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
n
R
DS(on)
=1.25
Ω
(typ) @Vgs=10V
RoHS compliant
n
n
n
n
Low on resistance
Low gate charge
Peak current vs pulse width curve
2
.
Applications
n
n
n
Adaptor
Charger
SMPS standby power
3.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
1 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
Parameter
Symbol
V
DSS
Rating
500
Units
V
Drain-source voltage
（
note*1
）
（
note*2
）
I
D
5.0*
A
A
Continuous drain current
I
D
@100
℃
Figure 3
Pulsed drain current
，
V
GS
@10V
Power dissipation
I
DM
P
D
Figure 6
100
A
W
Derating factor above 25
℃
W/
℃
0.8
Gate-source voltage
V
GS
E
AS
I
AS
+20
V
mJ
A
Single pulse Avalanche Engergy
Pulse avalanche rating
260
Figure 8
5.0
Peak diode recovery dv/dt
（
note*3
）
dv/dt
V/ns
Maximum temperature for soldering
Leads at 0.063 in
（
1.6m
m
）
from case for 10
seconds package body for 10 seconds
Operating junction and storage temperature
range
T
L
300
260
ºC
ºC
T
PKG
T
J
,T
STG
-55 to150
*Drain current limited by maximum junction temperature
Caution
：
Stresses greater than those listed in the”Absolute maximum ratings”table may cause permanent
Damage to the device
5.
Thermal characteristics
Parameter
Symbol Rating
Unit
Test condition
Junction-ambient
R
θ
JA
R
θ
JC
62
ºC/W 1
cubic foot chamber,free air
Drain lead soldered to water cooled heatsink,P
D
ºC/W
Junction-case
1.25
adjusted for a peak junction temperature of +150
℃
2 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise specified)
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coeffcient
，
Figure 11
Symbol
BV
DSS
Test Conditions
Min Typ Max
Units
V
GS
=0V,I
DS
=250
μ
A 500
Reference to 25
℃
I
D
=250uA
–
–
V
△
BV
DSS
/
△
T
J
V/
℃
0.61
V
DS
=500V, V
GS
=0V
V
DS
=400V, V
GS
=0V
T
J
=125
°
C
–
–
–
1
Drain-source leakage current
I
DSS
μ
A
–
100
Gate threshold voltage,Figure 12
Gate-source forward leakage
Gate-source reverse leakage
V
GS(th)
I
GSS
V
DS
=V
GS
, I
D
=250
μ
A 2.0
–
–
–
4.0
1
V
V
GS
=20V
V
GS
=-20V
–
–
uA
-1
V
GS
=10V,I
D
=2.5A
（
note*4
）
Static drain-source on-resistance
Figure 9 and 10
R
DS(on)
–
–
1.25 1.5
Ω
V
DS
=15V, I
D
=2.5A
Forward transconductance
gfs
6
–
S
（
note*4
）
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
–
–
–
–
525
64
12
9.0
11
30
16
14
3.0
6.0
–
–
–
–
–
–
–
–
–
–
–
5
V
DS
=25V,V
GS
=0V
f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
ns
Figure 14
V
DD
=250V, I
D
=5A,
R
G
=12
Ω
,V
GS
=10V
Turn-off delay time
Fall time
t
d(off)
t
f
Total gate charge
Q
g
V
DD
=250V, I
D
=5A,
Figure 15
Gate-source charge
Gate-drain charge
Continuous source current
（
body biode
）
Q
gs
Q
gd
I
S
nC
A
Integral pn-diode in
MOSFET
Maximum pulsed current
（
body biode
）
Diode forward voltage
I
SM
V
SD
t
rr
–
–
–
–
–
–
20
1.5
–
I
S
=5A, V
GS
=0V
I
F
=5A, V
GS
=0V
di/dt=100A/
μ
s
V
Reverse recovery time
400
1700
nS
nC
Reverse recovery charge
Q
rr
–
Note:1.T
J
=25
℃
to 150
℃
.
2.Repetitive rating;pulse width limited by maximum junction temperature
3.I
SD
=5A di/dt<100A/
μ
s,V
DD
< BV
DSS,
T
J
=150
℃
.
4.pulse widt<380us;duty cycle<2%.
3 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Typical operating characteristics
4 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
T
e
st Circuits and Waveforms
7 of 8
Rev 1.1 JUN 2017
5A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8 of 8
Rev 1.1 JUN 2017
