KIA-Semicon-Tech-KIA840SD
| Part # | KIA-Semicon-Tech-KIA840SD |
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8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
n
n
n
n
n
R
DS(ON)
=0.7
Ω
(typ) @V
GS
=10V
RoHS compliant
Low on resistance
Low gate charge
Peak current vs pulse width curve
2
.
Applications
n
n
n
n
Adaptor
TV main power
SMPS power supply
LCD panel power
3.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 6
Rev 1.2 JAN 2016
8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
C
=25
°
C,unless otherwise specified)
Units
Rating
Parameter
Symbol
TO-220 TO-252,
TO-263
Drain-source voltage
V
DSS
I
D
500
8.0
5.5
28
V
A
Continuous drain current
Continuous drain current T
C
=100
º
C
Pulsed drain current
A
a1
I
DM
A
Power dissipation
160
100
0.8
W
P
D
Derating factor above 25
℃
Gate-source voltage
1.28
W/
º
C
V
V
GS
+20
400
30
a2
Single pulse avalanche energy
Avalanche energy, repetitive
Avalanche current
E
AS
mJ
mJ
A
a1
E
AR
a1
I
AR
7.0
Peak diode recovery dv/dt
Gate-source ESD(HBM-C=100pF,R=1.5K
Ω
)
dv/dt
a3
5.5
V/ns
V
VESD
(G-S)
4000
Operating junction and storage temperature
range
T
J
,T
STG
T
L
150,-55 to150
300
º
C
º
C
Maximum temperature for soldering
*Drain current limited by maximum junction temperature
Caution
：
Stresses greater than those listed in the
”
Absolute maximum ratings
”
table may cause permanent
Damage to the device
5.
Thermal characteristics
Parameter
Junction-case
Junction-ambient
Symbol Rating Unit
Test condition
Drain lead soldered to water cooled heatsink,P
D
adjusted for a peak junction temperature of +150
º
C
R
θ
JC
R
θ
JA
1.04
100
º
C/W
º
C/W 1
cubic foot chamber,free air
2 of 6
Rev 1.2 JAN 2016
8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
C
=25
°
C,unless otherwise specified)
Parameter
Symbol
BV
DSS
Test Conditions
Min Typ Max
Units
Drain-source breakdown voltage
V
GS
=0V,I
D
=250
μ
A
500
–
–
V
Reference 25
℃
Bvdss temperature coefficient
△
BV
DSS
/
△
T
J
–
0.74
–
V/
º
C
I
D
=250uA
V
DS
=500V, V
GS
=0V
T
A
=25
°
C
–
–
–
–
–
25
250
–
Drain-source leakage current
Gate source breakdown voltage
I
DSS
μ
A
V
DS
=400V, V
GS
=0V
T
A
=125
°
C
I
GS
=+1mA
(open drain)
V
GS
=20V
V
GSO
+20
V
Gate-source forward leakage
Gate-source reverse leakage
Drain-source on-resistance
Gate threshold voltage
I
GSS(F)
I
GSS(R)
R
DS(on)
V
GS(TH)
–
–
–
–
10
-10
0.9
4
uA
V
GS
=-20V
V
GS
=10V,I
D
=4A
V
DS
= V
GS
, I
D
=250uA
–
0.7
3
Ω
2
V
Pulse width tp<380
μ
s,
δ
<2%
Forward transconductance
Input capacitance
gfs
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DS
=15V, I
D
=3A
–
–
–
–
–
–
–
–
–
–
–
–
8.5
960
110
10
11
–
–
–
–
–
–
–
–
–
–
–
8
S
V
DS
=25V,V
GS
=0V
f=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
pF
17
46
22
24
4.0
10
–
V
DD
=250V, I
D
=8A,
R
G
=12
Ω
,V
GS
=10V
ns
Turn-off delay time
Fall time
t
d(off)
t
f
Total gate charge
Q
g
V
DD
=250V, I
D
=8A,
V
GS
=10V
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
I
S
nC
A
Continuous source current
（
body biode
）
Maximum pulsed current
（
body biode
）
Diode forward voltage
I
SM
V
SD
t
rr
–
–
–
–
–
–
32
I
S
=8A, V
GS
=0V
I
S
=8A, V
GS
=0V
dI
F
/dt=100A/
μ
s
T
J
=25
º
C
–
1.5
V
ns
nC
A
Reverse recovery time
175
0.75
8.57
–
–
–
Reverse recovery charge
Reverse recovery current
Pulse width tp<380
μ
s,
δ
<2%
Q
rr
I
RRM
Note:a1.Repetitive rating;pulse width limited by maximum junction temperature
a2.L=10.0mH,Start T
J
=25
º
C.
a3. I
SD
=8A di/dt<100A/
μ
s,V
DD
< BV
DS,
Start T
J
=25
º
C.
3 of 6
Rev 1.2 JAN 2016
8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Typical operating characteristics
4 of 6
Rev 1.2 JAN 2016
8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.2 JAN 2016
8A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.2 JAN 2016
