KIA-Semicon-Tech-KNB2404A
| Part # | KIA-Semicon-Tech-KNB2404A |
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190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
R
DS(on)
(TYP)
= 2.2mΩ @V
GS
= 10 V
Lead free and green device available
Low Rds-on to minimize conductive loss
High avalanche current
2
.
Applications
Power supply
DC-DC converters
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 6
Rev 1.1 Sep.2020
190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNP2404A
Package
TO-220
Brand
KIA
KNB2404A
TO-263
KIA
5.
Absolute maximum ratings
Parameter
Symbol
Maximum
Units
Drain-to-source voltage
Gate-to-source voltage
V
DSS
V
GSS
40
V
V
+25
190
120
109
480
46
T
C
=25ºC
(Silicon limited)
T
C
=25°C(Package limited)
A
Continuous drain current
I
D
T
C
=100°C (Silicon limited)
T
C
=25 ºC
Pulsed drain current
I
DP
I
AS
A
A
Avalanche current(L=0.5mH)
Avalanche energy
(L=0.5mH)
E
AS
529
mJ
T
C
=25 ºC
123
82
W
W
ºC
Maximum power dissipation
P
D
T
C
=100 ºC
Junction & storage temperature range
T
J
,T
STG
-55
～
150
*Drain current limited by maximum junction temperature.
6.
Thermal characteristics
Parameter
Symbol
Typical
Units
ºC/W
Thermal resistance-junction to case
Thermal resistance-junction to ambient
R
θjc
R
θja
1.02
80
2 of 6
Rev 1.1 Sep.2020
190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
A
=25
°
C,unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Static characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward Transconductance
Diode characteristics
Diode forward voltage
Diode continuous forward current
Reverse recovery time
Reverse recovery charge
Dynamic characteristics
2
Gate resistance
BV
DSS
I
DSS
V
GS
=0V,I
DS
=250μA
V
DS
=64V,V
GS
=0V
V
DS
=V
GS
, I
DS
=250μA
V
GS
=+25V,V
DS
=0V
V
GS
=10V,I
DS
=30A
V
DS
=5V, I
D
=40A
40
–
–
–
–
V
μA
V
1
4
V
GS(th)
I
GSS
2
–
–
–
+100 nA
R
DS(on)
G
fs
–
2.2
135
3.5
–
mΩ
S
–
V
SD
I
S
I
SD
=40A,V
GS
=0V
I
S
=40A,dl/dt=100A/μs
V
GS
=0V, V
DS
=0V,F=1MHz
–
–
–
–
0.9
–
1.3
V
A
190
t
rr
55
70
–
–
nS
nC
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
–
–
–
–
–
–
2.0
6010
1400
675
25
–
–
–
–
–
–
–
–
Ω
Input capacitance
V
GS
=0V, V
DS
=25V,
F=1.0MHz
Output capacitance
pF
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
102
62
V
DD
=25V,I
D
=90A,
V
GS
=10V,R
G
=2.7Ω
nS
nC
Turn-off delay time
t
d(OFF)
t
f
Turn-off fall time
–
84
Gate charge characteristics
2
Total gate charge
Q
g
Q
gs
Q
gd
–
–
–
150
32
–
–
–
V
DS
=40V, V
GS
=10V,
I
D
=32A,F=1.0MHz
Gate-to-source charge
Gate-to-drain charge
70
3 of 6
Rev 1.1 Sep.2020
190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
T
est circuits and waveforms
4 of 6
Rev 1.1 Sep.2020
190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.1 Sep.2020
190A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.1 Sep.2020
