KIA-Semicon-Tech-KNB2804C
| Part # | KIA-Semicon-Tech-KNB2804C |
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150A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
R
DS(ON),typ.
=3.0mΩ(typ.)@V
GS
=10V
Uses CRM(CQ) advanced Trench MOS technology
Excellent QgxRDS(on) product(FOM)
Extremely low on-resistance RDS(on)
2
.
Application
Motor control and drive
Battery management
UPS
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 5
Rev 1.1.Dec. 2020
150A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNP2804C
Package
TO-220
Brand
KIA
KNB2804C
TO-263
KIA
5.
Absolute maximum ratings
TC=25
ºC
unless otherwise specified
Parameter
Drain-to-Source Voltage
Symbol
V
DSS
Ratings
40
Unit
V
Gate-to-Source Voltage
V
GSS
±20
150
90
T
C
=25
ºC(Silicon limited)
Continuous Drain Current
T
C
=100
ºC(Silicon limited)
T
C
=25
ºC(Package limited)
I
D
A
80
Pulsed Drain Current
T
C
=25
ºC(
t
p
limited by T
jmax
)
I
DM
320
225
Avalanche Energy (L=0.5mH,RG=25
Ω
)
E
AS
mJ
W
Maximum power
T
C
=25
ºC
P
D
230
Dissipation
ºC
Junction & Storage Temperature Range
T
J
& T
STG
-55 to 150
6.
Thermal characteristics
Parameter
Symbol
Ratings
Units
Thermal resistance, Junction-case
Thermal resistance, junction-ambient
R
θJC
R
θJA
0.54
105
ºC/W
ºC/W
2 of 5
Rev 1.1.Dec. 2020
150A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Static characteristics
Symbol
Conditions
Min
Typ
Max Units
Drain-source breakdown voltage
Zero Gate Voltage Drain Current
Gate threshold voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250μA
V
DS
=36V , V
GS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=
±2
0V,V
DS
=0V
V
GS
=10V,I
D
=30A
V
DS
=5V,I
D
=40A
40
–
–
–
1
V
μA
V
–
1.0
–
V
GS(th)
I
GSS
2.0
–
3.0
±
100
4.0
–
Gate leakage current
nA
mΩ
S
Drain-source on-resistance
Forward Transconductance
Dynamic characteristics
R
DS(on)
gfs
–
3.0
126
–
V
GS
=0V,V
DS
=0V
Frequency=1MHz
Gate Resistance
R
G
–
1.5
–
Ω
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
5900
690
640
28
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
DS
=20V,V
GS
=0V,
F=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
68
V
DS
=20V,I
D
=40A,
V
GS
=10V,R
G
=3Ω
Turn-off delay time
t
d(off)
t
f
110
32
Fall time
Gate Charge Characteristics
Total gate charge
Q
g
Q
gs
Q
gd
–
–
–
120
18
–
–
–
nC
nC
nC
V
DS
=32V,I
D
=40A ,
V
GS
=10V
Gate-source charge
Gate-drain charge
34
Diode characteristics
Diode forward voltage
Drain Continuous Forward current
Reverse recovery time
Reverse recovery charge
V
SD
I
S
V
GS
=0V,I
SD
=30A
–
–
–
–
0.85
–
1.3
V
A
150
t
rr
40
41
–
–
ns
nC
IF=40A
di/dt=100A/μs
Q
rr
3 of 5
Rev 1.1.Dec. 2020
150A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 5
Rev 1.1.Dec. 2020
150A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.1.Dec. 2020
