KIA-Semicon-Tech-KNB2908B
| Part # | KIA-Semicon-Tech-KNB2908B |
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130A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
KNX2908B, uses advanced trench technology to provide excellent R
DS(ON)
, Low gate charge,It can
be used in a wide variety of applications.
2
.
Features
V
DS
=80V,I
D
=130A R
DS(ON) typ.)
=5.0mΩ @ V
GS
=10V
（
High density cell design for lower Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
3
.
Applications
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
4.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
Rev 1.0.Apr. 2021
1 of 5
130A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5.
Ordering Information
Part Number
Package
TO-263
Brand
KIA
KNB2908B
KNP2908B
TO-220
KIA
6.
Absolute maximum ratings
Symbo
Parameter
Rating
Units
l
V
V
Drain-source voltage
V
DS
80
Gate-source voltage
V
GS
I
D
I
DM
E
AS
P
D
+20
130
520
900
245
Continuous drain curren
Pulsed drain current
(Note1)
Single pulse avalanche energy
(Note2)
Derating Factor above 25ºC
A
A
mJ
W/ºC
T
J,
T
STG
Operation junction and temperature range
-55 to175
ºC
7.
Thermal characteristics
Symbol
R
θJC
Parameter
Unit
ºC /W
Max
0.61
Thermal Resistance, Junction-to-Case
Rev 1.0.Apr. 2021
2 of 5
130A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Electrical characteristics
(T
A
=25
°
C,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Units
Off Characteristics
Drain-source breakdown voltage
Drain-Source Leakage Current
Gate-Soure Forward Leakage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250μA
V
DS
=80V, V
GS
=0V
V
GS
=+20V
80
–
–
–
–
–
–
V
1
μA
nA
nA
I
GSS(F)
I
GSS(R)
–
100
-100
Gate-Soure Reverse Leakage
On Characteristics
V
GS
=-20V
–
Drain-source on-Resistance
(Note3)
R
DS(on)
V
GS(th)
gfs
V
GS
=10V,I
D
=35A
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V,I
D
=20A
–
2.0
–
5.0
2.9
42
6.0
4.0
–
mΩ
V
Gate threshold voltage
Forward Transconductance
Dynamic Characteristics
Total gate charge
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
160
31
50
24
41
75
25
–
–
–
–
–
–
–
V
DD
=40V, V
GS
=10V
I
D
=20A
Gate-source charge
Gate-drain charge
nC
ns
Turn-on delay time
Rise time
V
DD
=30V,
I
D
=40A,
R
GEN
=3Ω,
V
GS
=10V,
Turn-off delay time
Fall time
t
d(off)
t
f
Switching Characteristics
(Note 4)
Input capacitance
C
iss
C
oss
C
rss
–
–
–
7950
460
–
–
–
V
DS
=25V,V
GS
=0V,
f=1MHz
Output capacitance
Reverse transfer capacitance
pF
V
380
Drain-Source Diode Characteristics
Diode Forward voltage
V
SD
V
GS
=0V,I
S
=20A
–
–
1.3
Note
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. EAS condition :T j=25
℃
,VDD=50V,VG=10V,L=0.5mH,Rg=1
Ω
3. Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production.
Rev 1.0.Apr. 2021
3 of 5
130A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9
.
T
est circuits
Rev 1.0.Apr. 2021
4 of 5
