KIA-Semicon-Tech-KNB2915A

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Features  











RDS(ON)= 10mΩ( typ.)@ VGS=10V  

Uses CRM(CQ) advanced Trench technology  

Extremely low on-resistance RDS(on)  

Excellent QgxRDS(on) product(FOM)  

Qualified according to JEDEC criteria  

2

.

Application  







Motor control and drive  

Battery management  

UPS (Uninterrupible Power Supplies)  

3.

Pin configuration  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 6  

Rev 1.1.Sep. 2020  

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Ordering Information  

Part Number  

KNP2915A  

Package  

TO-220  

Brand  

KIA  

KNB2915A  

TO-263  

KIA  

5.

Absolute maximum ratings  

TC=25

ºC

unless otherwise specified  

Parameter  

Symbol  

V

DSS  

Ratings  

Unit  

V

Drain-to-Source Voltage  

150  

130  

T

C

=25 ºC(Silicon limited)  

I

D  

Continuous Drain Current  

T

C

=25 ºC(Package limited)  

T

C

=100 ºC(Silicon limited)  

160  

80  

A

Pulsed drain current (T

C

= 25°C, t

p

limited by T

jmax  

)

I

DP  

E

AS  

V

GS  

P

tot  

500  

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)  

Gate-Source voltage  

272  

±25  

428  

mJ  

V

Power dissipation (TC = 25 ºC)  

W

Junction & Storage Temperature Range  

T

J

& T

STG

-55 to

 

150  

ºC  

6.

Thermal characteristics  

Parameter  

Symbol  

Ratings  

Units  

ºC/W  

Thermal resistance, junction-ambient  

Thermal resistance, Junction-case  

R

θJA  

R

θJC  

0.29  

65  

2 of 6  

Rev 1.1.Sep. 2020  

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

Electrical characteristics  

(T

J

=25

°

C,unless otherwise notes)  

Symbo  

l

Parameter  

Conditions  

Min Typ  

Max  

Units  

Static characteristics  

Drain-source breakdown voltage  

BV

DSS  

I

DSS  

V

GS

=0V,I

D

=250μA  

V

DS

=150V , V

GS

=0V ,Tj=25 ºC  

V

DS

=150V , V

GS

=0V, Tj=150 ºC  

V

DS

=V

GS

, I

D

=250μA  

150  

–

0.05  

–

–

1

V

–

–

Zero Gate Voltage Drain Current  

μA  

20  

5

Gate threshold voltage  

Gate leakage current  

V

GS(th)  

I

GSS  

3

–

4

V

10  

10  

22  

100  

100  

15  

27  

–

nA  

V

GS

=

25

V,V

DS

=0V  

V

GS

=10V,I

D

=50A, Tj=25 ºC  

V

DS

=4.5V,I

D

=25A, Tj=150 ºC  

V

DS

=5V,I

D

=50A  

–

Drain-source on-resistance  

R

DS(on)  

gfs  

mΩ  

S

–

Forward Transconductance  

Dynamic characteristics  

–

V

GS

=0V,V

DS

=0V  

Frequency=1MHz  

Gate Resistance  

R

G  

–

1.5  

–

Ω

Input capacitance  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

–

–

–

–

–

–

–

3560  

330  

90  

–

–

–

–

–

–

–

pF  

pF  

pF  

ns  

ns  

ns  

ns  

V

DS

=0V,V

GS

=75V,  

F=1MHz  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

18  

92  

V

DD

=75V,I

D

=50A,  

V

GS

=10V,R

G

=2.7Ω  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

35  

70  

Gate Charge Characteristics  

Total gate charge  

Q

g  

Q

gs  

Q

gd  

–

–

–

70  

24  

25  

–

–

–

nC  

nC  

nC  

V

DS

=75V,I

D

=50A,  

V

GS

=10V, F=1MHz  

Gate-source charge  

Gate-drain charge  

Diode characteristics  

Diode forward voltage  

Reverse recovery time  

Reverse recovery charge  

V

SD  

t

rr  

V

GS

=0V,I

SD

=30A  

–

–

–

–

1.3  

V

70  

–

–

ns  

nC  

I

F

=50A  

Dl

F

/dt=100A/μs  

Q

rr  

233  

3 of 6  

Rev 1.1.Sep. 2020  

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

8

.

Typical Characteristics  

4 of 6  

Rev 1.1.Sep. 2020  

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 6  

Rev 1.1.Sep. 2020  

130A

，

150V  

KNX2915A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 6  

Rev 1.1.Sep. 2020