KIA-Semicon-Tech-KNB3610A

Part #	KIA-Semicon-Tech-KNB3610A
Download	KIA-Semicon-Tech-KNB3610A

60A

，

100V

3610A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

1

.

Description

KNX3610A, uses advanced trench technology to provide excellent R

DS(ON)

, Low gate charge,It can

be used in a wide variety of applications.

2

.

Features



V

DS

=100V,I

D

=60A R

DS(ON) typ.)

=17mΩ @ V

GS

=10V

（









High density cell design for lower Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

3

.

Applications







Power switching application

Hard switched and High frequency circuits

Uninterruptible power supply

4.Symbol

Pin

1

Function

Gate

2

Drain

3

Source

Drain

4

http://www.kiaic.com/

Rev 1.0.Apr. 2021

1 of 5

60A

，

100V

3610A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

5.

Ordering Information

Part Number

Package

TO-263

Brand

KIA

KNB3610A

KNP3610A

TO-220

KIA

6.

Absolute maximum ratings

Parameter

Symbol

Rating

Units

V

V

Drain-source voltage

V

DS

V

GS

I

D

100

+20

Gate-source voltage

Continuous drain curren

60

A

A

Pulsed drain current

(Note1)

Single pulse avalanche energy

(Note2)

Derating Factor above 25ºC

Operation junction and temperature range

I

DM

240

mJ

E

AS

250

W/ºC

P

D

160

T

J,

T

STG

-55 to175

ºC

7.

Thermal characteristics

Symbol

R

θJC

Parameter

Unit

ºC /W

Max

0.93

Thermal Resistance, Junction-to-Case

http://www.kiaic.com/

Rev 1.0.Apr. 2021

2 of 5

60A

，

100V

3610A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

8

.

Electrical characteristics

(T

A

=25

°

C,unless otherwise noted)

Parameter

Symbol

Test Conditions

Min Typ Max Units

Off Characteristics

Drain-source breakdown voltage

Drain-Source Leakage Current

Gate-Soure Forward Leakage

BV

DSS

I

DSS

V

GS

=0V,I

D

=250μA

V

DS

=80V, V

GS

=0V

100

–

–

–

–

V

–

–

1

μA

nA

I

GSS(F)

V

GS

=+20V

V

GS

=-20V

100

Gate-Soure Reverse Leakage

On Characteristics

I

GSS(R)

–

–

-100

nA

Drain-source on-Resistance

(Note3)

R

DS(on)

V

GS(th)

gfs

V

GS

=10V,I

D

=20A

V

DS

=V

GS

, I

D

=250μA

V

DS

=5V,I

D

=20A

–

2.0

–

17

3.0

20

20

4.0

–

mΩ

V

Gate threshold voltage

Forward Transconductance

Dynamic Characteristics

Total gate charge

S

Q

g

Q

gs

Q

gd

t

d(on)

t

r

–

–

–

–

–

–

–

82

24

28

13

10

21

18

–

–

–

–

–

–

–

V

DD

=80V, V

GS

=10V

I

D

=30A

Gate-source charge

Gate-drain charge

nC

ns

Turn-on delay time

Rise time

V

DD

=50V,

I

D

=30A,

R

GEN

=3Ω,

V

GS

=10V,

Turn-off delay time

Fall time

t

d(off)

t

f

Switching Characteristics

(Note 4)

Input capacitance

C

iss

C

oss

C

rss

–

–

–

3830

235

–

–

–

V

DS

=25V,V

GS

=0V,

f=1MHz

Output capacitance

Reverse transfer capacitance

pF

V

208

Drain-Source Diode Characteristics

Diode Forward voltage

V

SD

V

GS

=0V,I

S

=20A

–

–

1.2

Note

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. EAS condition :T j=25

℃

,VDD=50V,VG=10V,L=0.5mH,Rg=25

Ω

3. Pulse

T

e

st: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.

4. Guaranteed by design, not subject to production.

9

.

T

est circuits

http://www.kiaic.com/

Rev 1.0.Apr. 2021

3 of 5

60A

，

100V

3610A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

Figure 1 Output Characteristics

Figure 3 On-Resistance vs. I

D

and V

GS

Figure 5 On-Resistance vs. V

GS

Figure 2 Transfer Characteristics

Figure 4 On-Resistance vs. Junction Temperature

Figure 6 Body Diode Forward Voltage

http://www.kiaic.com/

Rev 1.0.Apr. 2021

4 of 5

60A

，

100V

3610A

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

Figure 8 Capacitance Characteristics

Figure 7 Gate-Charge Characteristics

Figure 9 Maximum Forward

Biased Safe Operation Area

Figure 10 Single Pulse Power

Rating Junction-to-Ambient

Figure 11

Normalized Maximum Transient Thermal Impedance

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Rev 1.0.Apr. 2021

5 of 5