KIA-Semicon-Tech-KND3403C

80A 30V  

N-CHANNEL MOSFET  

KNX3403C  

KIA  

SEMICONDUCTORS  

1

.

Features  

KNX3403C is an N-channel enhancement mode power Mosfet field effect transistor which is produced  

using KIA’s LVMosfet technology.the improved process and cell structure have been especially tailored to  

minimize on-state resistance,provide superior switching performance. This device is widely used in  

UPS,Power Management for Inverter Systems.  

2

.

Features  











80A, 30V, R

DS

(on)( typ. )= 5.0mΩ@V

GS

= 10 V  

Low gate charge  

Low Crss  

Fast switching  

Improved dv/dt capability  

3.

Pin configuration  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

1 of 5  

Rev 1.0 Dec.2020  

80A 30V  

N-CHANNEL MOSFET  

KNX3403C  

KIA  

SEMICONDUCTORS  

4.

Ordering Information  

Part Number  

KND3403C  

Package  

TO-252  

Brand  

KIA  

5.

Absolute maximum ratings  

(T

C

= 25ºC , unless otherwise noted)  

Symbol  

V

DSS  

Parameter  

Value  

30  

Units  

V

Drain-Source Voltage  

80  

A

Drain Current -Continuous (T

C

= 25 ºC)  

-Continuous (T

C

= 100 ºC)  

I

D  

57  

A

I

DM  

Drain Current

 

-Pulsed  

Gate-Source Voltage  

320  

±20  

110.25  

65  

A

V

GSS  

E

AS  

V

(Note 1)  

Single Pulsed Avalanche Energy  

mJ  

W

Power Dissipation (T

C

= 25 ºC)  

P

D  

-Derate above 25 ºC  

0.47  

W/ºC  

-55 to +150  

ºC  

T

J

,T

STG

Operating and Storage Temperature Range  

6.

Thermal Characteristics  

Symbol  

R

θJC  

Parameter  

Value  

0.52  

62  

Units  

ºC /W  

ºC /W  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

θJA  

2 of 5  

Rev 1.0 Dec.2020  

80A 30V  

N-CHANNEL MOSFET  

KNX3403C  

KIA  

SEMICONDUCTORS  

7.

Electrical characteristics  

(T

C

= 25ºC , unless otherwise noted)  

Test Conditions

 

Min Typ

 

Max Units  

Symbol Parameter  

Off Characteristics  

B

VDSS  

I

DSS  

Drain-Source Breakdown Voltage  

Drain-Source Leakage Current  

Gate- Source Leakage Current  

V

GS

= 0 V, I

D

= 250 uA  

V

DS

= 30 V, V

GS

= 0 V  

V

GS

= ±20 V, V

DS

= 0 V  

30  

—  

—  

—  

—  

1

V

uA  

nA  

I

GSS  

—  

—  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

= V

GS

, I

D

= 250 uA  

V

GS

= 10 V, I

D

= 20 A  

V

GS

= 4.5V, I

D

= 10 A  

0.8  

—  

1.3  

5.0  

7.5  

2.5  

6.2  

9.0  

V

mΩ  

mΩ  

R

DS(on)  

Static Drain-Source On-Resistance  

Gate Resistance  

—  

f = 1.0 MHz

，

 

V

DS

=0 V, V

GS

= 0 V,  

R

G  

—  

1.5  

—  

Ω

Dynamic Characteristics  

C

iss  

Input Capacitance  

—  

—  

—  

2500  

1250  

1100  

—  

—  

—  

pF  

pF  

pF  

V

DS

= 25 V, V

GS

= 0 V,  

f = 1.0 MHz  

C

oss  

Crss  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

—  

—  

—  

—  

—  

—  

—  

7

—  

—  

—  

—  

—  

—  

—  

ns  

ns  

V

DD

=15 V,V

GS

=4.5V,  

I

D

=1 A, R

G

=3Ω  

3.6  

(Note2.3)  

36.8  

22.5  

38.9  

4.48  

10.78  

ns  

ns  

Q

g  

Q

gs  

Q

gd  

nC  

nC  

nC  

V

DS

=25V,I

D

=14A ,  

V

GS

=10V

(Note 2,3)  

Drain-Source Diode Characteristics and Maximum Ratings  

Integral Reverse P-N  

Junction Diode in the  

MOSFET  

I

S  

Continuous Source Current  

Pulsed Source Current  

—  

—  

—  

—  

—  

—  

—  

80  

320  

1.4  

—  

A

A

I

SM  

V

SD  

t

rr  

Drain-Source Diode Forward Voltage

 

V

GS

= 0 V, I

S

=20 A  

—  

V

Reverse Recovery Time  

V

GS

= 0 V, I

S

= 20 A,  

12.8  

3.3  

ns  

nC  

dI

F

/ dt = 100 A/us

(Note 2)  

Qrr  

Reverse Recovery Charge  

—  

Notes:  

1. L = 0.5mH, V

DD

= 25V,

V

GS

= 10V,

R

G

= 25Ω, Starting T

J

= 25°C  

2. Pulse Test : Pulse width

≤

300us, Duty cycle

≤

2%  

3. Essentially independent of operating temperature  

3 of 5  

Rev 1.0 Dec.2020  

80A 30V  

N-CHANNEL MOSFET  

KNX3403C  

KIA  

SEMICONDUCTORS  

8.

Typical Characteristics  

V

DS

, Drain -Source Voltage (V)  

Fig1.

Typical Output Characteristics  

Tj – Junction

T

emperature (

°

C)  

Fig2.

Normalized Threshold Voltage Vs.

T

emperature  

Tj – Junction

T

emperature (

°

C)  

Fig4.

Normalized Threshold Voltage Vs.

T

emperature  

Tc- Case Temperature (

°

C)  

Fig3.

Typical Transfer Characteristics  

V

DS

, Drain -Source Voltage (V)  

Fig6.

Maximum Safe Operating Area  

V

SD

, Source-Drain Voltage (V)  

Fig5.

Typical Source-Drain Diode Forward  

4 of 5  

Rev 1.0 Dec.2020  

80A 30V  

N-CHANNEL MOSFET  

KNX3403C  

KIA  

SEMICONDUCTORS  

V

DS

, Drain-Source Voltage (V)  

Fig7.

Typical Capacitance Vs. Drain-Source Voltage  

Qg, Total Gate Charge (

nC

)  

Fig8.

Typical Gate Charge Vs. Gate-Source Voltage  

Fig9.

Transient Thermal Response Curve  

Fig10.

Switching Time Test Circuit and waveforms  

5 of 5  

Rev 1.0 Dec.2020