KIA-Semicon-Tech-KND3404B
| Part # | KIA-Semicon-Tech-KND3404B |
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80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
R
DS(ON),typ.
=5.0mΩ(typ.)@V
GS
=10V
Uses CRM(CQ) advanced Trench MOS technology
Extremely low on-resistance R
DS(on)
Excellent QgxR
DS(on)
product(FOM)
Qualified according to JEDEC criteria
2
.
Applications
Motor control and drive
Battery management
UPS (Uninterrupible Power Supplies)
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 6
Rev 1.0.Nov. 2020
80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KND3404B
Package
TO-252
Brand
KIA
5.
Absolute maximum ratings
TC=25
ºC
unless otherwise specified
Parameter
Symbol
V
DSS
Ratings
40
Unit
V
Drain-to-Source Voltage
T
C
=25 ºC
T
C
=100 ºC
80
Continuous Drain Current
1
I
D
58
A
2
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
Avalanche energy, single pulse
3
Gate-Source voltage
)
I
DP
E
AS
320
225
mJ
V
V
GS
±20
Power dissipation (TC = 25 ºC)
4
P
tot
92
W
ºC
Junction & Storage Temperature Range
T
J
& T
STG
-55 to 150
6.
Thermal characteristics
Parameter
Symbol
Ratings
Units
ºC/W
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
R
θJA
R
θJC
94
1.37
2 of 6
Rev 1.0.Nov. 2020
80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Static characteristics
Symbol
Conditions
Min Typ
Max
Units
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250μA
V
DS
=40V , V
GS
=0V ,Tj=25 ºC
V
DS
=40V , V
GS
=0V, Tj=125ºC
V
DS
=V
GS
, I
D
=250μA
V
GS
=
20
V,V
DS
=0V
40
–
–
–
1
V
–
Zero Gate Voltage Drain Current
μA
–
–
10
2.5
100
6.5
8.0
–
Gate threshold voltage
Gate leakage current
V
GS(th)
I
GSS
1.0
1.8
1
V
–
–
–
–
nA
V
GS
=10V,I
D
=30A
5.0
5.5
110
Drain-source on-resistance
2
R
DS(on)
gfs
mΩ
S
V
GS
=4.5V, I
D
=30A
Forward Transconductance
Dynamic characteristics
V
DS
=5V,I
D
=40A
V
GS
=0V,V
DS
=0V
Frequency=1MHz
Gate Resistance
R
G
–
2.0
–
Ω
Input capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
2300
290
150
9.5
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V,V
GS
=0V,
F=1MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
30
V
DD
=20V,I
D
=40A,
V
GS
=10V,R
G
=3Ω
Turn-off delay time
Fall time
t
d(off)
t
f
55
17.5
Gate Charge Characteristics
Total gate charge
Q
g
Q
gs
Q
gd
–
–
–
47.5
9.0
–
–
–
nC
nC
nC
V
DS
=20V,I
D
=40A,
V
GS
=10V, F=1MHz
Gate-source charge
Gate-drain charge
Diode characteristics
Diode forward voltage
2
Reverse recovery time
Reverse recovery charge
10.0
V
SD
t
rr
V
GS
=0V,I
SD
=40A
–
–
–
–
1.5
V
20
9.0
–
–
ns
nC
I
F
=40A
Dl
F
/dt=100A/μs
Q
rr
Note:1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width
≤
300us,duty cycle
≤
2%.
3. The EAS data shows Max.rating. The test condition is V
DD
=40V, V
GS
=10V, L=0.5mH, I
AS
=30A.
4. The power dissipation is limited by 150 ºC junction temperature.
3 of 6
Rev 1.0.Nov. 2020
80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 6
Rev 1.0.Nov. 2020
80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.0.Nov. 2020
80A
，
40V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.0.Nov. 2020
