KIA-Semicon-Tech-KND3502A

70A

，

20V  

KNX3502A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Description  

The KNX3502A uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications.  

2

.

Features  

n

n

n

n

R

DS(on)

=7m

Ω

(typ.) @ V

DS

=4.5V  

High power and current handing capability  

Lead free product is acquired  

Surface mount package  

3

.

Applications  

n

n

n

Battery protection  

Load switch  

Power management  

4.Symbol  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

1 of 5  

Rev 1.0 AUG. 2019  

70A

，

20V  

KNX3502A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5.

Ordering Information  

Part Number  

KND3502A  

Package  

TO-252  

Brand  

KIA  

6.

Absolute maximum ratings  

Parameter  

Symbol  

Rating  

Units  

V

V

A

A

A

Drain-source voltage  

Gate-source voltage  

V

DS  

V

GS  

20  

+12  

70  

42  

240  

T

C

=25

º

C

1  

Continuous drain current  

T

C

=100

º

C  

I

D  

Pulsed drain current

2  

Single pulse avalanche energy

3  

Total power dissipation  

Operation junction temperature range  

Storage temperature range  

I

DM  

E

AS  

P

D  

T

J  

T

STG  

mJ  

340  

50  

-55 to150  

-55 to150  

T

C

=25

º

C  

W

º

C  

º

C  

7.

Thermal characteristics  

Parameter  

Thermal resistance,Junction-case  

Thermal resistance-junction to ambient  

Symbol  

Typ  

—  

Max  

2.5  

50  

Unit  

º

C/W  

º

C/W  

R

θ

JC  

R

θ

JA  

—  

2 of 5  

Rev 1.0 AUG. 2019  

70A

，

20V  

KNX3502A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

8

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted  

Parameter  

Symbol  

BV

DSS  

Test Conditions  

Min  

Typ  

Max  

Units  

Drain-source breakdown voltage  

V

GS

=0V,I

D

=250

μ

A  

20  

–

–

V

Gate threshold voltage  

V

GS(th)  

I

DSS  

V

DS

=V

GS

, I

D

=250

μ

A  

V

DS

=16V, V

GS

=0V  

V

GS

=+12V, V

DS

=0V  

0.4  

0.65  

1.1  

1

V

Drain-source leakage current  

Gate- source leakage current  

–

–

–

–

–

μ

A  

nA  

m

Ω  

m

Ω  

Ω

I

GSS  

+100  

9

V

GS

=4.5V,I

D

=8A  

T

C

=25

°

C  

V

GS

=2.5V,I

D

=6A  

T

C

=25

°

C  

7

Static drain-source on-resistance  

R

DS(on)  

–

–

–

8.5  

2.8  

11  

–

Gate resistance  

R

g  

Q

g  

V

DS

=0V, V

GS

=0V,f=1MHz  

Total gate charge(10V)  

48.5  

–

Total gate charge(4.5V)  

Gate-source charge  

Gate-drain charge  

V

DS

=10V, V

GS

=10V  

I

D

=20A  

23.4  

2.7  

nC  

Q

gs  

Q

gd  

–

–

–

–

7.2  

Turn-on delay time  

t

d(on)  

–

5.3  

–

V

DS

=10V,ID=20A  

R

G

=3

Ω

, V

GS

=10V  

Rise time  

Turn-off delay time  

Fall time  

t

r  

t

d(off)  

t

f  

–

–

–

75.4  

64  

62  

–

–

–

ns  

Input capacitance  

C

iss  

C

oss  

C

rss  

I

SD  

–

–

–

–

–

1800  

200  

185  

–

–

–

V

DS

=15V,V

GS

=0V,  

f=1MHz  

pF  

Output capacitance  

Reverse transfer capacitance  

Source-drain current(Body diode)  

Diode forward voltage  

–

70  

1.4  

A

V

V

SD  

V

GS

=0V,I

S

=15A  

–

Body diode reverse recovery time  

Body diode reverse recovery charge  

t

rr  

–

–

26.5  

11.5  

–

–

ns  

nC  

I

f

=15A. dl/dt=100A/us  

Q

rr  

Note:1.The maximum current rating is package limited  

2.Repetitive rating: pulse width limited by maximum junction temperature.  

3.EAS condition: T

J=

25

°

C, V

DD

=10V, V

G

=4.5V, R

G

=25

Ω

.  

3 of 5  

Rev 1.0 AUG. 2019  

70A

，

20V  

KNX3502A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

9

.

T

e

st circuits  

4 of 5  

Rev 1.0 AUG. 2019  

70A

，

20V  

KNX3502A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 5  

Rev 1.0 AUG. 2019