KIA-Semicon-Tech-KND42120A
| Part # | KIA-Semicon-Tech-KND42120A |
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3.0A
，
1200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Product Features
RoHS Compliant
R
DS(ON),typ.
=7.0Ω@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
2
.
Applications
Adaptor
Charger
SMPS Standby Power
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
Rev 1.0.Apr. 2021
1 of 5
3.0A
，
1200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KND42120A
KNP42120A
KNF42120A
Package
TO-252
Brand
KIA
TO-220
KIA
TO-220F
KIA
5.
Absolute maximum ratings
(T
C
= 25 ºC , unless otherwise specified)
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
1200
±30
Unit
V
Drain-to-Source Voltage T
J
=25 ºC
Gate-to-Source Voltage
Continuous Drain Current @ Tc=25 ºC
3.0
A
I
DM
Pulsed Drain Current at V
GS
=10V Limited by T
Jmax
Single Pulse Avalanche Energy(V
DD
=50V)
Maximum Power Dissipation
12
E
AS
100
mJ
W
P
D
75
T
Jmax
T
STG
Max. Junction Temperature
150
ºC
Storage Temperature Range
-55 to 150
6.
Thermal characteristics
Symbol
Parameter
Ratings
1.67
Unit
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ºC /W
75
Rev 1.0.Apr. 2021
2 of 5
3.0A
，
1200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(TJ=25°C,unless otherwise specified)
Symbol
BV
DSS
I
DSS
Parameter
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=1200V, V
GS
=0V
V
GS
=
±
30V, V
DS
=0V
V
GS
=10V, I
D
=1.5A
V
DS
=V
GS
,I
D
=250uA
Min.
1200
—
Typ.
—
Max.
—
Unit
V
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
—
1
uA
nA
Ω
I
GSS
-100
—
100
9.0
4.5
—
R
DS(ON)
Drain-to-Source ON Resistance
V
GS(TH)
Gate Threshold Voltage
7.0
—
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
C
iss
C
rss
C
oss
Q
g
Input Capacitance
860
22
60
17.5
5.0
5.5
17
6.0
23
11
—
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
—
pF
nC
—
—
V
DD
=600V,
I
D
=3.0A,
V
GS
=10V
Q
gs
Q
gd
t
d(ON)
t
rise
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-on Delay Time
Rise Time
—
—
—
V
DD
=600V, I
D
=3.0A,
R
G
=4.7Ω
V
GS
= 10V
(Resistive Load)
—
nS
t
d(OFF)
t
fall
Turn-Off Delay Time
Fall Time
—
—
I
SD
Continuous Source Current
Forward Voltage
3.0
1.5
—
A
V
V
SD
t
rr
I
S
=3.0A, V
GS
=0V
–
Reverse recovery time
Reverse recovery charge
200
760
ns
nC
V
GS
=0V ,I
F
=3.0A,
diF/dt=-100A/μs
Q
rr
—
Rev 1.0.Apr. 2021
3 of 5
3.0A
，
1200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
T
est circuits and waveforms
Rev 1.0.Apr. 2021
4 of 5
