KIA-Semicon-Tech-KND4820A
| Part # | KIA-Semicon-Tech-KND4820A |
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9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Applications
n
n
CRT, TV/Monitor
Other Applications
2
.
Features
n
n
n
n
R
DS(on)
= 260m
Ω
@V
GS
= 10 V
Proprietary new planar technology
Low gate charge minimize switching loss
Fast recovery body diode
3.
Pin configuration
Pin
1
Function
Gate
Drain
2
3
Source
Drain
4
1 of 6
Rev 1.1 May 2016
9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Absolute maximum ratings
(T
C
=25 ºC , unless otherwise specified)
Parameter
Drain-source voltage
Symbol
V
DSS
V
GSS
I
D
Ratings
200
±20
9.0
Units
V
Gate-source voltage
V
Continuous drain currenet
Pulsed drain current at V
GS
=10V
Single pulse Avalanche energy
A
I
DM
36
A
E
AS
300
83
mJ
W
Power dissipation
P
D
Derating factor above 25°C
0.59
W/°C
Soldering temperature distance of 1.6mm from case
for 10seconds
T
L
300
°C
°C
Operating and storage temperature range
T
J
&T
STG
-55~+150
Caution: Stresses greater than those listed in the “ Absolute maximum ratings” may cause permanent
damage to the device.
5.
Thermal characteristics
Rating
TO-220
Parameter
Symbol
Unit
TO-252
1.5
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
θ
JC
θ
JA
1.5
ºC/W
ºC/W
62
75
2 of 6
Rev 1.1 May 2016
9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Symbol
Conditions
Min
Typ Max Unit
Off Characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=200V ,V
GS
=0V
V
DS
=160V ,V
GS
=0V,T
J
=125 ºC
V
GS
=20V,V
DS
=0V
200
–
–
–
–
–
–
1
100
100
-100
V
–
–
–
–
μ
A
μ
A
nA
nA
Drain-to-source leakage current
Gate-to-source leakage current
I
GSS
V
GS
=-20V,V
DS
=0V
On characteristics
Gate threshold voltage
Static drain-source on-resistance
V
GS(th)
R
DS(on)
gfs
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10V,I
D
=5.4A
V
DS
=25V, I
D
=9A
2.0
–
–
–
4.0
400 m
Ω
V
260
9.5
Forward transconductance
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain (Miller)charge
Resistive switching characteristics
Turn-on delay time
–
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
670
78
30
16
3
–
–
–
–
–
–
V
DS
=25V,V
GS
=0V,f=1.0MHz
V
DD
=150V,I
D
=9A,V
GS
=0V-10V,
pF
nC
6
T
d(ON)
t
rise
T
d(OFF)
t
fall
–
–
–
–
6.8
5.8
20
5
–
–
–
–
Rise time
Turn-off delay time
Fall time
V
DD
=100V,I
D
=9A,V
GS
=10V,
nS
R
G
=12
Ω
Source-drain body diode characteristics
T
J
=25
°
C,unless otherwise notes
Diode forward voltage
Continuous source current
2
Pulsed source current
2
Reverse recovery time
Reverse recovery charge
V
SD
I
SD
I
SM
t
rr
V
GS
=0V,I
S
=9A
–
–
–
–
–
–
–
–
1.5
9
36
–
V
A
A
ns
nC
Integral PN-diode in MOSFET
155
380
I
F
=9A,di
F
/dt=100A/
μ
s
Q
rr
–
Note: 1.T
J
=25
°
C to 150
°
C
2. Pulse width <380
μ
s; duty cycle <2%.
3.KIA finished product specifications please customer before placing order, should obtain the latest
version of the finished product specifications.
3 of 6
Rev 1.1 May 2016
9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7.
Typical characteristics
4 of 6
Rev 1.1 May 2016
9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.1 May 2016
9.0A
，
200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.1 May 2016
