KIA-Semicon-Tech-KND8103A
| Part # | KIA-Semicon-Tech-KND8103A |
Download  | KIA-Semicon-Tech-KND8103A |
30A
，
30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
The KIA-8103A is the highest performance trench N-ch MOSFE
T
s with extreme high cell
density,which provide excellent RDSON and gate charge for most of the synchronous buck converter
applications.The KIA30N03B meet the RoHS and Green Product requirenment,100%EAS guaranteed with
full function reliability approved.
2
.
Features
n
n
n
n
n
n
R
DS(on)
=15m
Ω
(typ.) @ V
DS
=30V
Avanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
100%EAS Guaranteed
Green Device Available
3
.
Applications
n
n
n
High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
4.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
1 of 5
Rev 1.0 JAN 2018
30A
，
30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5.
Ordering Information
Part Number
KND8103A
Package
TO-252
Brand
KIA
KNU8103A
TO-251
KIA
6.
Absolute maximum ratings
Parameter
Symbol
Rating
Units
V
V
A
A
A
Drain-source voltage
Gate-source voltage
V
DS
V
GS
30
+20
30
18
60
Continuous drain current,
T
C
=25
º
C
I
D
V
GS
@10V
1
T
C
=100
º
C
Pulsed drain current
2
I
DM
E
AS
I
AS
P
D
T
J
Single pulse avalanche energy
3
72
21
25
mJ
A
Avalanche current
Total power dissipation
4
Operation junction temperature range
Storage temperature range
T
C
=25
º
C
W
º
C
º
C
-55 to150
-55 to150
T
STG
7.
Thermal characteristics
Parameter
Symbol
Typ
—
Max
25
62
5
Unit
º
C/W
º
C/W
º
C/W
Thermal resistance,Junction-ambient(t<10s)
1
Thermal resistance,Junction-ambient
（
Steady State
）
1
Thermal resistance,Junction-case
1
R
θ
JA
R
θ
JA
R
θ
JC
—
—
2 of 5
Rev 1.0 JAN 2018
30A
，
30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise noted
Parameter
Drain-source breakdown voltage
Symbol
BV
DSS
Test Conditions
V
GS
=0V,I
D
=250
μ
A
Reference to 25
º
C,
I
D
=1mA
Min
30
Typ
–
Max
–
Units
V
BV
DSS
temperature coefficient
△
BV
DSS
/
△
T
J
0.023
V/
°
C
V
GS
=10V,I
D
=10A
V
GS
=4.5V,I
D
=5A
15
18
Static drain-source on-resistance
2
R
DS(on)
m
Ω
22
1.5
-5.2
30
2.5
Gate threshold voltage
V
GS(th)
temperature coefficient
V
GS(th)
△
V
GS(th)
1.0
V
V
DS
=V
GS
, I
D
=250
μ
A
mV/
°
C
V
DS
=24V, V
GS
=0V
T
J
=25
°
C
V
DS
=24V, V
GS
=0V
T
J
=55
°
C
1
μ
A
μ
A
Drain-source leakage current
I
DSS
5
Gate- source leakage current
Forward transconductance
I
GSS
gfs
V
GS
=+20V, V
DS
=0V
V
DS
=15V, I
D
=10A
+100
nA
S
10
V
DS
=24V,
V
GS
=0V,f=1MHz
Gate resistance
R
g
2.5
5
Ω
Total gate charge(4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
–
7.2
1.4
2.2
4.1
9.8
15.5
6.0
572
81
V
DS
=20V, V
GS
=4.5V
I
D
=12A
nC
V
DD
=12V,I
D
=5A,
R
G
=3.3
Ω
, V
GS
=10V
ns
V
DS
=15V,V
GS
=0V,
f=1MHz
pF
65
V
DD
=25V,L=0.1mH,
I
AS
=10A
V
G
= V
D=
=0V,
Force current
V
GS
=0V,I
S
=15A, T
J
=25
º
C
Single pulse avalanche energy
5
EAS
16
mJ
Continuous source current
1,6
Pulsed source current
2,6
Diode forward voltage
2
I
S
I
SM
V
SD
30
60
1.2
A
A
V
Note:1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 20Z copper.
2.The data tested by pulsed, pulse width<300
μ
s,duty cycle<2%
3.The EAS data shows Max.rating.The test condition is V
DD
=25V, V
GS
=10V,L=0.1mH,I
AS
=21A
4.The power dissipation is limited by 150
°
C junction temperature
5.The Min, value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
,in real applications, should be limited by total
power dissipation.
3 of 5
Rev 1.0 JAN 2018
30A
，
30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9
.
T
e
st circuits and waveforms
4 of 5
Rev 1.0 JAN 2018
30A
，
30V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.0 JAN 2018
