KIA-Semicon-Tech-KNF3725A
| Part # | KIA-Semicon-Tech-KNF3725A |
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50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
n
n
n
n
Proprietary New Planar Technology
R
DS(ON),typ.
=45m
Ω
@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
2
.
Features
n
n
n
DC-DC Converters
DC-AC Inverters for UPS
SMPS and Motor controls
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 6
Rev 1.0.Nov. 2019
50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNF3725A
Package
TO-220F
TO-3P
Brand
KIA
KNH3725A
KIA
5.
Absolute maximum ratings
TC=25
º
C
unless otherwise specified
Ratings
Parameter
Symbol
Unit
TO-220F
TO-3P
Drain-to-Source Voltage
Gate-to-Source Voltage
V
DSS
V
GSS
250
V
A
±
20
Continuous Drain Current
50
25
I
D
Continuous Drain Current @ Tc=100
º
C
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
I
DM
E
AS
200
1250
5.0
mJ
V/ns
W
dv/dt
125
1.0
260
P
D
Derating Factor above 25
º
C
2.08
W/
º
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
T
L
T
PAK
300
260
º
C
Operating and Storage Temperature Range
T
J
& T
STG
-55 to 150
Caution: Stresses greater than those listed in the
“
Absolute Maximum Ratings
”
may cause permanent
damage to the device.
6.
Thermal characteristics
Ratings
Parameter
Symbol
Units
TO-220F
90
TO-3P
–
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
R
θ
JA
R
θ
JC
º
C/W
1.0
0.48
2 of 6
Rev 1.0.Nov. 2019
50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Symbol
BV
DSS
I
DSS
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250
μ
A
V
DS
=250V ,V
GS
=0V
V
DS
=200V , V
GS
=0V
T
J
=125
º
C,
250
–
–
–
–
1
V
μ
A
–
–
100
μ
A
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
–
–
–
–
+100
-100
nA
nA
Gate-body leakage current
I
GSS
On characteristics
Static drain-source on-resistance
Gate threshold voltage
Forward Transconductance
[4]
Dynamic characteristics
R
DS(on)
V
GS(th)
gfs
V
GS
=10V,I
D
=25A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=15V,I
D
=20A
–
2.0
–
45
–
65
60
4.0
–
m
Ω
V
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
C
iss
C
oss
C
rss
–
–
–
4000
510
255
–
–
–
pF
pF
pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
–
21
29
66
24
75
25
20
–
–
–
–
–
–
–
ns
ns
ns
V
DD
=100V,I
D
=20A,
V
GS
=10V,R
G
=3.9
Ω
ns
nC
nC
nC
V
DD
=100V,I
D
=20A ,
V
GS
=0 to10V
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
[4]
Pulsed drain-source current
[4]
V
SD
I
SD
I
SM
V
GS
=0V,I
s
=30A
Integral pn-diode
In MOSFET
–
–
–
–
–
–
1.5
50
200
V
A
A
Reverse recovery time
Reverse recovery charge
Note:
1.TJ=+25
°
C to +150
°
C
t
rr
Q
rr
–
–
185
400
–
–
ns
μ
C
V
GS
=0V,I
F
=20A
di
F
/dt=100A/
μ
s
2. Repetitive rating; pulse width limited by maximum junction temperature.
3
.
ISD= 20A di/dt < 100 A/
μ
s, VDD < BVDSS, TJ=+150
º
C.
4. Pulse width
≤
380
μ
s; duty cycle
≤
2%
.
3 of 6
Rev 1.0.Nov. 2019
50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 6
Rev 1.0.Nov. 2019
50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.0.Nov. 2019
50A
，
250V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.0.Nov. 2019
