KIA-Semicon-Tech-KNF6650A
| Part # | KIA-Semicon-Tech-KNF6650A |
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15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
The KNX6650A-Channel enhancement mode silicon gate power MOSFET is designed for high voltage,
high speed power switching applications such as high efficiency switched mode power supplies, active
power factor correction, electronic lamp ballasts based on half bridge topology
2
.
Features
n
n
n
n
Proprietary New Planar
T
echnology
R
DS(ON),typ.
=0.33
Ω
@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNF6650A
Package
TO-220F
TO-220
Brand
KIA
KNP6650A
KIA
5.
Absolute maximum ratings
TC=25
º
C
unless otherwise specified
Ratings
Parameter
Symbol
Unit
TO220 TO22F
Drain-to-Source Voltage
[1]
Gate-to-Source Voltage
V
DSS
V
GSS
500
V
±
30
Continuous Drain Current
15
I
D
Continuous Drain Current
@ T
C
=100
º
C
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Figure3
Figure6
1000
A
I
DM
E
AS
mJ
V/ns
W
dv/dt
5.0
140
1.12
60
P
D
Derating Factor above 25
º
C
0.48
W/
º
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
T
L
T
PAK
300
260
º
C
Operating and StorageTemperatureRange
T
J
& T
STG
-55 to 150
Caution: Stresses greater than those listed in the
“
Absolute Maximum Ratings
”
may cause permanent
damage to the device.
6.
Thermal characteristics
Ratings
Parameter
Symbol
Units
TO220
TO220F
Thermal resistance, junction-ambient
Thermal resistance, Junction-case
R
θ
JA
R
θ
JC
62
100
º
C/W
0.9
2.1
2 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Off characteristics
Drain-source breakdown voltage
Drain-to-source Leakage Current
Symbol
BV
DSS
I
DSS
Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250
μ
A
V
DS
=500V ,V
GS
=0V
V
DS
=400V , V
GS
=0V
T
C
=125
º
C,
500
–
–
–
–
1
V
μ
A
–
–
100
μ
A
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
–
–
–
–
+100
-100
nA
nA
Gate-body leakage current
I
GSS
On characteristics
Static drain-source on-resistance
Gate threshold voltage
Forward Transconductance
R
DS(on)
V
GS(th)
gfs
V
GS
=10V,I
D
=7.5A
V
DS
=V
GS
, I
D
=250
μ
A
V
DS
=30V,I
D
=15A
–
2.0
–
0.33
–
15
0.45
4.0
–
Ω
V
S
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
C
iss
C
oss
C
rss
–
–
–
2148
208
22
–
–
–
pF
pF
pF
V
DS
=25V,V
GS
=0V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
–
–
–
–
–
–
–
13
28
44
35
46
12
17
–
–
–
–
–
–
–
ns
ns
ns
V
DD
=250V,I
D
=15A,
V
GS
=10V,R
G
=6.1
Ω
ns
nC
nC
nC
V
DD
=250V,I
D
=15A ,
V
GS
=0 to10V
Drain-source diode characteristics
Drain-source diode forward voltage
Continuous drain-source current
[4]
Pulsed drain-source current
[4]
V
SD
I
SD
I
SM
t
rr
V
GS
=0V,I
s
=15.0A
Integral pn-diode
In MOSFET
–
–
–
–
–
–
–
1.5
15
60
–
V
A
A
Reverse recovery time
520
ns
V
GS
=0V,I
F
=15.0A
d
lF
/dt=100A/
μ
s
Reverse recovery charge
Note:
Q
rr
–
4.5
–
μ
C
[1] T
J
=+25
º
C to +150
º
C
[2] Repetitive rating; pulse width limited by maximum junction temperature.
[3] I
SD
= 15A di/dt < 100 A/
μ
s, V
DD
< BV
DSS
, T
J
=+150
º
C.
[4] Pulse width
≤
380
µ
s; duty cycle
≤
2%.
3 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 7
Rev 1.0 Feb. 2018
15A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7 of 7
Rev 1.0 Feb. 2018
