KIA-Semicon-Tech-KNH7150A
| Part # | KIA-Semicon-Tech-KNH7150A |
Download  | KIA-Semicon-Tech-KNH7150A |
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
General Features
n
n
Proprietary New Planar Technology
R
DS(ON),typ.
=0.24
Ω
@V
GS
=10V
n
n
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
2
.
Applications
n
n
n
Adaptor Charger
SMPS Power Supply
LCD Panel Power
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 6
Rev 1.1 Sep 2019
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNP7150A
KNF7150A
KNH7150A
Package
TO-220
TO-220F
TO-3P
Brand
KIA
KIA
KIA
5.
Absolute maximum ratings
(T
C
= 25
º
C , unless otherwise specified)
Ratings
Unit
Symbol
Parameter
TO-3P
TO-220
500
TO-220F
V
DSS
V
GSS
Drain-to-Source Voltage
[1]
V
A
Gate-to-Source Voltage
±
30
Continuous Drain Current
20
I
D
Continuous Drain Current@ Tc=100
º
C
Pulsed Drain Current at V
GS
=10V
[2]
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Figure3
Figure6
1500
5.0
I
DM
E
AS
mJ
V/ns
W
dv /dt
275
2.2
175
60
P
D
Derating Factor above 25
º
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10
seconds, Package Body for 10 seconds
1.40
0.48
W/
º
C
T
L
T
PAK
300
260
º
C
T
J
&T
STG
Operating and Storage Temperature Range
-55 to 150
6.
Thermal characteristics
Ratings
TO-3P TO-220 TO-220F
Symbol
Parameter
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.45
60
0.71
62
2.08
100
º
C
/W
2 of 6
Rev 1.1 Sep 2019
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
OFF Characteristics
(TJ=25
°
C,unless otherwise specified)
Symbol
BV
DSS
Parameter
Test Conditions
Min.
500
—
Typ.
—
Max.
—
Unit
V
VGS=0V,
I
D
=250uA
Drain-to-Source Breakdown Voltage
V
DS
=500V, V
GS
=0V
—
1
I
DSS
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
uA
nA
V
DS
=400V,V
GS
=0V,
—
—
100
T
J
=125
°
C
V
GS
=+30V,V
DS
=0V
V
GS
=-30V, V
DS
=0V
—
—
—
—
100
I
GSS
-100
ON Characteristics
Symbol
R
DS(ON)
Static Drain-to-Source On-Resistance
[4]
(TJ=25
°
C,unless otherwise specified)
Parameter
Test Conditions
V
GS
=10V, I
D
=10A
V
DS
=V
GS
,I
D
=250uA
V
DS
=15V,I
D
=10A
Min.
—
Typ.
0.24
—
Max.
0.3
4.0
—
Unit
Ω
V
GS(TH)
Gate Threshold Voltage
2.0
—
V
g
FS
Forward Transconductance
19
S
Dynamic Characteristics
Symbol
Essentially independent of operating temperature
Parameter
Test Conditions
Min.
—
Typ.
2650
255
34
Max.
—
Unit
pF
C
iss
C
oss
C
rss
Q
g
Input Capacitance
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
Output Capacitance
—
—
Reverse Transfer Capacitance
Total Gate Charge
—
—
—
65
—
V
DD
=250V,
I
D
=20A,
Q
gs
Q
gd
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
—
14
—
nC
V
GS
=0 to 10V
—
24
—
Resistive Switching Characteristics
Symbol Parameter
Essentially independent of operating temperature
Test Conditions
Min.
—
Typ.
34
Max.
—
Unit
nS
t
d(ON)
t
rise
t
d(OFF)
t
fall
Turn-on Delay Time
Rise Time
V
DD
=250V,
I
D
=20A,
—
76
—
V
GS
= 10V
R
G
=25
Ω
Turn-Off Delay Time
Fall Time
—
164
85
—
—
—
Source-Drain Body Diode Characteristics
(T
J
=25
°
C,unless otherwise specified)
Symbol
I
SD
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
Test Conditions
Min
—
Typ.
—
Max.
20
80
1.5
—
Unit
A
Integral PN-diode
in MOSFET
I
SM
—
—
V
SD
t
rr
I
S
=20A, V
GS
=0V
—
—
V
—
310
3.0
ns
uC
V
GS
=0V ,I
F
=20A,
diF/dt=100A/
μ
s
Q
rr
Reverse recovery charge
—
—
Note:
1.T
J
=+25
°
C to +150
°
C
2.Repetitive rating; pulse width limited by maximum junction temperature
3. I
SD
= 20Adi/dt < 100 A/
μ
s, V
DD
< BV
DSS
, TJ=+150
°
C.
4.Pulse width
≤
380
μ
s; duty cycle
≤
2%
3 of 6
Rev 1.1 Sep 2019
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
T
e
st circuits and waveforms
4 of 6
Rev 1.1 Sep 2019
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.1 Sep 2019
20A
，
500V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.1 Sep 2019
