KIA-Semicon-Tech-KNH9120A
| Part # | KIA-Semicon-Tech-KNH9120A |
Download  | KIA-Semicon-Tech-KNH9120A |
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
n
n
n
n
Proprietary New Planar Technology
R
DS(ON)
=50m
Ω
(
typ.)
@V
GS
=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode
2
.
Application
n
n
n
DC-DC Converters
DC-AC Inverters for UPS
SMPS and Motor controls
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNP9120A
Package
TO-220
TO-3P
Brand
KIA
KNH9120A
KIA
5.
Absolute maximum ratings
(T
C
= 25
º
C , unless otherwise specified)
Rating
Parameter
Symbol
Units
TO-220
TO-3P
Drain-source voltage
[1]
Gate-source voltage
V
DSS
V
GSS
I
D
I
D @
TC=100
º
C
I
DM
200
±
20
40
V
V
A
Continuous Drain Current
Continuous Drain Current @Tc=100
º
C
Figure3
A
Pulsed Drain Current at V
GS=
10V
[2]
Figure6
1200
5.0
A
Avalanche energy
Peak Diode Recovery dv/dt
[3]
Power Dissipation
Derating Factor above 25
º
C
Maximum
T
emperature for Soldering
Leads at 0.063in(1.6mm) form Case for 10
Seconds
Single pulse
E
AS
dv/dt
[3]
mJ
V/ns
W
W/
º
C
125
1.0
150
1.2
P
D
T
L
T
P
AK
300
260
º
C
Storage temperature
T
STG
-55~+150
º
C
Caution: Stresses greater than those listed in the
“
Absolute Maximum Ratings
”
may cause permanent damage to the device.
6.
Thermal Characteristics
Rating
TO-220
Symbol
Parameter
Unit
TO-3P
0.83
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.0
º
C
/W
62
2 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
Parameter
Off characteristics
Drain-source breakdown voltage
Symbol
BV
DSS
I
DSS
Conditions
(T
J
=25
°
C,unless otherwise specified)
V
GS
=0V,I
D
=250
μ
A
V
DS
=200V ,V
GS
=0V
V
DS
=160V , V
GS
=0V
T
J=
125
º
C
Min
Typ
Max
Unit
200
–
–
–
–
1
V
μ
A
Drain-to-Source Leakage Current
–
–
100
μ
A
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
–
–
–
–
+100
-100
nA
nA
Gate-to-source Leakage Current
I
GSS
On characteristics
(T
J
=25
°
C,unless otherwise specified)
Gate threshold voltage
V
GS(TH)
R
DS(ON)
V
DS
=V
GS
, I
D
=250
μ
A
2.0
–
4.0
V
Static drain-source on-resistance
Vg
S
=10V,I
D
=20A
–
50
65
m
Ω
Forward Transconductance
[4]
G
FS
V
DS
=15V,I
D
=20A
–
65
–
S
Dynamic characteristics
(Essentially independent of operating temperature)
Input capacitance
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
–
–
–
–
–
–
–
2800
305
110
20
30
65
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V,V
GS
=0V,
f=1.0 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
V
DD
=100V,I
D
=20A,
R
G
=3.9
Ω
,VGS=10V
t
D(OFF)
t
F
Fall time
25
Switching characteristics
Total gate charge
Gate-source charge
Gate-drain charge
(Essentially independent of operating temperature)
Q
G
Q
GS
Q
GD
–
–
–
97
14
39
nC
nC
nC
V
DD
=100V,
I
D
=20A
V
GS
=0 to10V
–
–
Switching characteristics
Drain-source diode forward voltage
Continuous drain-source current
[4]
Pulsed drain-source current
[4]
Reverse recovery time
(T
J
=25
°
C,unless otherwise specified)
V
SD
V
GS
=0V, I
S
=40A
–
–
–
–
1.5
40
V
A
I
SD
Integral PN-diode in
MOSFET
I
SM
t
rr
–
–
–
–
160
–
–
A
ns
μ
C
V
GS
=0V,I
F=
20A
280
420
di
F/
dt=100A/
μ
s
Reverse recovery charge
Q
rr
NOTE:[1] TJ=+25
º
C to +150
º
C ;
[2] Repetitive rating; pulse width limited by maximum junction temperature;
[3] ISD= 20A di/dt < 100 A/
μ
s, VDD < BVDSS, TJ=+150
º
C;
[4] Pulse width
≤
380
μ
s; duty cycle
≤
2%.
3 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
T
e
st circuits and waveforms
4 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7 of 8
Rev 1.0 MAR 2018
40A 200V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8 of 8
Rev 1.0 MAR 2018
