KIA-Semicon-Tech-KNP1906A

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

Features  









R

DS(on)

=2.2mΩ

（

typ.

）

@ V

GS

=10V  

Lead free and green device available  

Low R

DS

-on to minimize conductive loss  

High avalanche current  

2

.

Applications  







Power supply  

UPS  

Battery management system  

3.Symbol  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 6  

Rev 1.0 Aug. 2020  

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Ordering Information  

Part Number  

KNP1906A  

Package  

TO-220  

Brand  

KIA  

KNB1906A  

TO-263  

KIA  

5.

Absolute maximum ratings  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Drain-source voltage  

Symbol  

V

DSS  

V

GSS  

T

J  

Value  

Unit  

60  

V

Gate-source voltage  

+25  

V

Maximum junction temperature  

Storage temperature range  

150  

ºC  

ºC  

A

T

STG  

-55 to150  

230  

T

C

=25ºC(Silicon limit)  

T

C

=25ºC(package limit)  

Continuous drain current  

I

D  

160  

A

T

C

=100ºC(Silicon limit)  

139  

A

A

Pulse drain current  

Avalanche energy  

640  

T

C

=25ºC,Tp limited by T

jmax

)  

I

D

Pulse  

E

AS  

2112  

254  

mJ  

Maximum power dissipation

（

T

C

=25 ºC

）  

Soldering temperature

 

，

wave soldering only allowed at  

leads1.6mm from case for 10s)  

P

D  

w

T

sold  

260  

ºC  

6.

Thermal characteristics  

Parameter  

Symbol  

Rating  

Unit  

Thermal resistance,Junction-ambient  

Thermal resistance,Junction-case  

R

θJA  

R

θJC  

84  

ºC/W  

ºC/W  

0.49  

2 of 6  

Rev 1.0 Aug. 2020  

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

Electrical characteristics  

(T

A

=25

°

C,unless otherwise noted)  

Parameter  

Symbol  

BV

DSS  

Test Conditions  

V

GS

=0V,I

DS

=250μA  

V

DS

=48V, V

GS

=0V  

T

J

=125

°

C  

Min  

Typ  

Max  

Units  

Drain-source breakdown voltage  

60  

–

–

V

–

–

1

Zero gate voltage drain current  

I

DSS  

μA  

–

–

20  

4.0  

+100  

3.5  

–

Gate threshold voltage  

Gate leakage current  

Drain-source on-state resistance  

Gate resistance  

V

GS(th)  

I

GSS  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=+25V, V

DS

=0V  

V

GS

=10V,I

D

=80A  

V

DS

=0V, V

GS

=0V,f=1MHz  

I

SD

=80A, V

GS

=0V  

2.0  

3.0  

–

V

nA  

mΩ  

Ω

–

–

–

–

1

R

DS(on)  

2.2  

1.5  

0.9  

R

g  

Diode forward voltage  

V

SD  

1.4  

V

Diode continuous forward current  

Reverse recovery time  

Reverse recovery charge  

Input capacitance  

I

S  

t

rr  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

230  

A

I

F

=80A,  

54  

–

–

nS  

nC  

dl

SD

/dt=100A/μs  

Q

rr  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

115  

7850  

1240  

565  

28  

–

V

DS

=30V,V

GS

=0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

–

pF  

–

–

120  

73  

–

V

DD

=30V, I

DS

=80A,  

R

G

=3Ω,V

GS

=10V  

ns  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

–

152  

182  

46  

–

Total gate charge  

Q

g  

–

V

DS

=30V, V

GS

=10V  

I

D

=80A  

Gate-source charge  

Gate-drain charge  

Q

gs  

Q

gd  

—  

—  

nC  

74  

Note:1:Pulse test;pulse width<300us duty cycle<2%.  

2.The Value of RthJA is measured by placing the device in a still air box which is one cubic foot.  

3.Package limitation current is 160A,Calculated continuous current based on maximum allowable  

junction temperature.  

4.Starting TJ=25ºC,VDD=50V,VGS=10V,L=1mH.I

AS

=65A.  

3 of 6  

Rev 1.0 Aug. 2020  

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

8

.

Electrical characteristics  

4 of 6  

Rev 1.0 Aug. 2020  

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 6  

Rev 1.0 Aug. 2020  

230A

，

60V  

KNX1906A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 6  

Rev 1.0 Aug. 2020