KIA-Semicon-Tech-KNP2408A
| Part # | KIA-Semicon-Tech-KNP2408A |
Download  | KIA-Semicon-Tech-KNP2408A |
190A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Description
KNX2408A, uses advanced trench technology to provide excellent R
DS(ON)
, Low gate charge,It can
be used in a wide variety of applications.
2
.
Features
V
DS
=80V,I
D
=190A R
DS(ON) typ.)
=3.7mΩ @ V
GS
=10V
（
High density cell design for lower Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
3
.
Applications
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
4.Symbol
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 5
Rev 1.0.Apr. 2021
190A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5.
Ordering Information
Part Number
Package
TO-263
TO-220
TO-247
Brand
KNB2408A
KNP2408A
KNM2408A
KIA
KIA
KIA
6.
Absolute maximum ratings
Rating
Units
Parameter
TO-220
TO-263
Symbol
TO-247
Drain-source voltage
V
DSS
V
GSS
T
J
80
V
V
Gate-source voltage
+20
175
Maximum junction temperature
Storage temperature range
Continuous drain current
Pulse drain current
(Note1)
Avalanche energy,single pulsed
(Note2)
Maximum power dissipation
ºC
ºC
A
T
STG
I
D
-55 to175
190
T
C
=25ºC
T
C
=25ºC
L=0.5mH
T
C
=25 ºC
I
DM
760
A
E
AS
P
D
1.4
J
270
326
W
7.
Thermal characteristics
Max
TO-220
TO-263
Symbol
R
θJC
Parameter
Unit
TO-247
0.46
Thermal Resistance, Junction-to-Case
0.55
ºC /W
2 of 5
Rev 1.0.Apr. 2021
190A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Electrical characteristics
(T
A
=25
°
C,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ
Max Units
Off Characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250μA
V
DS
=80V, V
GS
=0V
80
–
–
–
–
V
Drain-Source Leakage Current
Gate-Soure Forward Leakage
1
μA
I
GSS(F)
I
GSS(R)
V
GS
=+20V
V
GS
=-20V
–
–
–
–
100
nA
nA
Gate-Soure Reverse Leakage
On Characteristics
-100
Drain-source on-Resistance
(Note3)
R
DS(on)
V
GS(th)
gfs
V
GS
=10V,I
D
=40A
V
DS
=V
GS
, I
D
=250μA
V
DS
=5V,I
D
=15A
–
2.0
–
3.7
2.8
15
4.5
4.0
–
mΩ
V
Gate threshold voltage
Forward Transconductance
Dynamic Characteristics
Total gate charge
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
260
75
80
25
21
48
18
–
–
–
–
–
–
–
V
DS
=64V, V
GS
=10V
I
D
=80A
Gate-source charge
Gate-drain charge
nC
ns
Turn-on delay time
Rise time
V
DD
=40V,
I
D
=40A,
R
GEN
=3Ω,
V
GS
=10V,
Turn-off delay time
Fall time
t
d(off)
t
f
Switching Characteristics
(Note 4)
Input capacitance
C
iss
C
oss
C
rss
–
–
–
13500
950
–
–
–
V
DS
=25V,V
GS
=0V,
f=1MHz
Output capacitance
Reverse transfer capacitance
pF
V
810
Drain-Source Diode Characteristics
Diode Forward voltage
V
SD
V
GS
=0V,I
S
=40A
–
–
1.3
Note
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. EAS condition :T j=25
℃
,V
DD
=50V,V
G
=10V,L=0.5mH,Rg=25
Ω
3. Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production.
3 of 5
Rev 1.0.Apr. 2021
190A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9
.
T
est circuits
4 of 5
Rev 1.0.Apr. 2021
190A
，
80V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 5
Rev 1.0.Apr. 2021
