KIA-Semicon-Tech-KNP2708A

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

1

.

General Features  

n

n

n

n

Proprietary New Trench

T

echnology  

R

DS(ON),typ.

=4.0m

Ω

@V

GS

=10V  

Low Gate Charge Minimize Switching Loss  

Fast Recovery Body Diode  

2

.

Applications  

n

n

n

High efficiency DC/DC converters  

Synchronous Rectification  

UPS Inverter  

3.

Pin configuration  

Pin  

1

Function  

Gate  

2

Drain  

3

Source  

Drain  

4

1 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

4.

Ordering Information  

Part Number  

KNP2708A  

Package  

TO-220  

Brand  

KIA  

KNB2708A  

TO-263  

KIA  

5.

Absolute maximum ratings  

(T

C

= 25

º

C , unless otherwise specified)  

Symbol  

V

DSS  

Parameter  

Rating  

80  

Unit  

Drain-to-Source Voltage

[1]  

Gate-to-Source Voltage  

Continuous Drain Current

[2]  

Continuous Drain Current

[3]  

V

V

GSS  

±

20  

160  

80  

I

D  

A

I

D

@ T

C

=100

º

C Continuous

 

Drain Current@T

C

=100

º

C

[2]  

116  

640  

1100  

5.0  

I

DM  

Pulsed Drain Current at V

GS

=10V

[2,4]  

Single Pulse Avalanche Energy  

Peak Diode Recovery dv/dt

[3]  

Power Dissipation  

E

AS  

mJ  

V/ns  

W

dv /dt  

313  

2.08  

P

D  

Derating Factor above 25

º

C  

W/

º

C  

Maximum Temperature for Soldering  

Leads at 0.063in (1.6mm) from Case for 10  

seconds, Package Body for 10 seconds  

T

L  

T

PAK  

300  

260  

º

C  

T

J

&T

STG  

Operating and Storage Temperature Range  

-55 to 175  

Caution: Stresses greater than those listed in the

“

Absolute Maximum Ratings

”

may cause permanent  

damage to the device.  

6.

Thermal characteristics  

Symbol  

R

θ

JC  

Parameter  

Rating  

0.48  

62  

Unit  

º

C /W  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

θ

JA  

2 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7

.

Electrical characteristics  

OFF Characteristics  

(TJ=25

°

C,unless otherwise specified)  

Symbol  

BV

DSS  

Parameter  

Test Conditions  

Min.  

80  

—  

Typ.  

—  

Max. Unit  

Drain-to-Source Breakdown Voltage  

V

GS

=0V, I

D

=250uA  

—  

5

V

V

DS

=80V, V

GS

=0V  

V

DS

=64V,V

GS

=0V,  

T

J

=125

°

C  

—  

I

DSS  

Drain-to-Source Leakage Current  

uA  

—  

—  

100  

V

GS

=+20V,V

DS

=0V  

V

GS

=-20V, V

DS

=0V  

—  

—  

—  

—  

+100  

-100  

I

GSS  

Gate-to-Source Leakage Current  

nA  

ON Characteristics  

Symbol  

(TJ=25

°

C,unless otherwise specified)  

Parameter  

Test Conditions  

V

GS

=10V, I

D

=24A

[5]  

V

DS

=V

GS

,I

D

=250uA  

V

DS

=10V, I

D

=80A

[5]  

Min.  

—  

Typ.  

4.0  

—  

Max. Unit  

R

DS(ON)

Static Drain-to-Source On-Resistance  

V

GS(TH)

Gate Threshold Voltage  

4.8  

4.0  

–

m

Ω  

V

2.0  

–

gfs  

Forward Transconductance  

130  

S

Dynamic Characteristics  

Symbol  

Essentially independent of operating temperature  

Parameter  

Test Conditions  

Min.  

—  

Typ.  

9300  

650  

260  

2.7  

Max. Unit  

—  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

V

GS

=0V,  

V

DS

=25V,  

f=1.0MHZ  

Output Capacitance  

—  

—  

—  

—  

—  

—  

—  

pF  

Reverse Transfer Capacitance  

Gate Series Resistance  

Total Gate Charge  

—  

f=1.0MHZ  

—  

Ω

Q

g  

—  

115  

40  

V

DD

=40V,  

I

D

=80A,  

nC  

Q

gs  

Q

gd  

Gate-to-Source Charge  

Gate-to-Drain (Miller) Charge  

—  

V

GS

=0 to 10V  

—  

30  

Resistive Switching Characteristics  

Symbol Parameter  

Essentially independent of operating temperature  

Test Conditions  

Min.  

—  

Typ.  

50  

Max. Unit  

—  

t

d(ON)  

t

rise  

t

d(OFF)  

t

fall  

Turn-on Delay Time  

Rise Time  

V

DD

=40V,  

I

D

=40A,  

—  

135  

112  

75  

—  

nS  

—  

V

GS

= 10V  

R

G

=10

Ω  

Turn-Off Delay Time  

Fall Time  

—  

—  

—  

Source-Drain Body Diode Characteristics  

(T

J

=25

°

C,unless otherwise specified)  

Symbol  

I

SD  

Parameter  

Continuous Source Current

[2]  

Pulsed Source Current

[2]  

Diode Forward Voltage  

Reverse recovery time  

Test Conditions  

Min  

—  

Typ.  

—  

Max. Unit  

160  

A

Integral PN-diode in  

MOSFET  

I

SM  

—  

—  

640  

V

SD  

t

rr  

I

S

=80A, V

GS

=0V  

—  

—  

1.2  

—  

V

—  

85  

205  

ns  

nC  

V

GS

=0V ,I

F

=80A,  

diF/dt=100A/

μ

s  

Q

rr  

Reverse recovery charge  

—  

—  

Note:[1] T

J

=+25

º

C to +175

º

C.  

[2] Silicon limited current only.  

[3] Package limited current .  

[4] Repetitive rating; pulse width limited by maximum junction temperature.  

[5] Pulse width

≤

380

µ

s; duty cycle

≤

2%.  

3 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

8

.

T

e

st circuits and waveforms  

4 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

5 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

6 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

7 of 8  

Rev 1.0 Nov. 2018  

160A

，

80V  

KNX2708A  

N-CHANNEL MOSFET  

KIA  

SEMICONDUCTORS  

8 of 8  

Rev 1.0 Nov. 2018