KIA-Semicon-Tech-KNP2910A
| Part # | KIA-Semicon-Tech-KNP2910A |
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130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Applications
n
n
High efficiency synchronous rectification in SMPS
High speed power switching
2
.
Features
n
n
n
n
n
R
DS(on)
=5.0m
Ω
@V
GS
= 10 V
Super high dense cell design
Ultra low On-Resistance
100% avalanche tested
Lead Free and Green devices available (RoHS Compliant)
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
Drain
4
1 of 6
Rev 1.3 Apr. 2018
130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
KNB2910A
KNP2910A
KNH2910A
Package
TO-263
TO-220
TO-3P
Brand
KIA
KIA
KIA
5.
Absolute maximum ratings
(T
C
=25
º
C , unless otherwise specified)
Ratings
TO-220/263
100
Parameter
Symbol
Units
TO-3P
Drain-source voltage
V
DSS
V
GSS
V
V
Gate-source voltage
±
25
130
99
Continuous drain currenet T
C
=25
º
C
2
Continuous drain currenet T
C
=100
º
C
2
300us pulsed drain current tested T
C
=25
º
C
1
Avalanche energy single pulse
3
A
I
D
A
I
DP
560
552
A
E
AS
mJ
T
C
=25
º
C
Power dissipation
300
150
375
W
W
°
C
°
C
A
P
D
T
C
=100
º
C
187.5
Maximum junction temperature
Storage temperature range
T
J
T
STG
I
S
175
-55~+175
140
Diode continuous forward current T
C
=25
º
C
6.
Thermal characteristics
Parameter
Symbol
θ
JC
Rating
0.5
Unit
Thermal resistance,Junction-to-case
Thermal resistance,Junction-to-ambient
º
C/W
º
C/W
θ
JA
62.5
2 of 6
Rev 1.3 Apr. 2018
130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
C
=25
°
C,unless otherwise notes)
Parameter
Symbol
Conditions
Min
Typ Max Unit
Off Characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0V,I
D
=250
μ
A
V
DS
=100V ,V
GS
=0V
T
J
=125
º
C
V
GS
=25V,V
DS
=0V
V
GS
=-25V,V
DS
=0V
100
–
–
–
–
–
–
1
30
100
-100
V
–
–
–
–
μ
A
μ
A
nA
nA
Drain-to-source leakage current
Gate-to-source leakage current
I
GSS
On characteristics
Gate threshold voltage
Static drain-source on-resistance
4
Gate charge characteristics
5
Total gate charge
Gate-source charge
Gate-drain (Miller)charge
Dynamic characteristics
5
Gate series resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
V
GS(th)
R
DS(on)
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10V,I
D
=40A
2.0
–
–
4.0
7.0
V
m
Ω
5.0
Q
g
Q
gs
Q
gd
–
–
–
130
32
55
–
–
–
V
DS
=80V,I
D
=70A,V
GS
=10V
V
DS
=0V,V
GS
=0V,f=1.0MHz
nC
R
G
T
d(ON)
t
rise
T
d(OFF)
t
fall
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
1
24
91
75
65
6800
630
350
–
–
–
–
–
–
–
–
Ω
V
DD
=50V,I
D
=70A,V
GEN
=10V,
nS
R
G
=5
Ω
Output capacitance
Reverse transfer capacitance
V
DS
=50V,V
GS
=0V,f=1.0MHz
pF
Source-drain body diode characteristics
T
J
=25
°
C,unless otherwise notes
Diode forward voltage
4
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,I
S
=70A
–
–
–
–
43
67
1.2
–
–
V
ns
nC
I
SD
=70A,di
F
/dt=100A/
μ
s,
Note: 1. Pulse width limited by safe operating area.
2. Caiculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A
3. Limited by T
Jmax,
I
AS
=47A, V
DD
=48V, R
G
=50
Ω
, Starting T
J
=25
°
C.
4. Pulse test; Pulse width <300
μ
s; duty cycle <2%.
5. Guaranteed by design, not subject to production testing.
6.KIA finished product specifications please customer before placing order, should obtain the latest
version of the finished product specifications.
3 of 6
Rev 1.3 Apr. 2018
130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical characteristics
4 of 6
Rev 1.3 Apr. 2018
130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.3 Apr. 2018
130A
，
100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
9.
T
est circuits and waveforms
6 of 6
Rev 1.3 Apr. 2018
