KIA-Semicon-Tech-KPD7910A
| Part # | KIA-Semicon-Tech-KPD7910A |
Download  | KIA-Semicon-Tech-KPD7910A |
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
1
.
Features
Uses CRM(CQ) advanced Trench technology
Extremely low on-resistance R
DS
(on)
Excellent QgxR
DS
(on) product(FOM)
Qualified according to JEDEC criteria
2
.
Applications
R
DS(ON),typ.
=60mΩ@V
GS
=10V
Motor control and drive
Battery management
UPS (Uninterrupible Power Supplies)
3.
Pin configuration
Pin
1
Function
Gate
2
Drain
3
Source
1 of 6
Rev 1.0.July. 2020
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4.
Ordering Information
Part Number
Package
TO-252
Brand
KIA
KPD7910A
5.
Absolute maximum ratings
TC=25
ºC
unless otherwise specified
Parameter
Symbol
V
DSS
Ratings
-100
Unit
V
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
T
C
=25
ºC
-28
I
D
T
C
=100
ºC
-17
A
(T
C
= 25°C, tp limited by Tjmax)
I
DP
E
AS
-112
Avalanche Energy
single pulse (L=1mH)
Gate-Source voltage
242
mJ
v
V
GS
±
20
Power dissipation (T
C
= 25
°C
)
Junction & Storage Temperature Range
P
D
102
w
ºC
T
J
& T
STG
-55 to 150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
ºC
T
sold
260
6.
Thermal characteristics
Parameter
Symbol
Ratings
Units
ºC/W
Thermal resistance, junction-ambient
2
Thermal resistance, Junction-case
R
θJA
R
θJC
62
1.22
2 of 6
Rev 1.0.July. 2020
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7
.
Electrical characteristics
(T
J
=25
°
C,unless otherwise notes)
Parameter
Static characteristics
Symbol
Conditions
Min
Typ
Max Units
Drain-source breakdown voltage
BV
DSS
V
GS
=0V,I
D
=250μA
-100
–
–
V
V
Gate threshold voltage
V
GS(th )
V
DS
=V
GS
,I
D
=250uA
-1.5
-2.0
-2.5
-1
T
j
=25
ºC
–
–
–
–
Zero Gate Voltage
I
DSS
μA
V
DS
=-100V,V
GS
=0V
Drain Current
T
j
=125
ºC
-20
Gate leakage current
I
GSS
R
DS(on)
gfs
–
–
–
–
–
-100
70
90
–
nA
mΩ
S
V
GS
=-
2
0V,V
DS
=0V
V
GS
=-10V,I
D
=-10A
V
GS
=-4.5V,I
D
=-5A
V
DS
=-5V,I
D
=-10A
60
70
25
1
Drain-source on-resistance
Forward Transconductance
Dynamic characteristics
V
GS
=0V,V
DS
=0V
Frequency=1MHz
Gate Resistance
R
G
–
20
–
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
3800
1200
650
10
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V,V
GS
=0V,
F=1MHz
25
V
DD
=-50V,I
D
=-10A,
V
GS
=-10V,R
G
=2.7Ω
Turn-off delay time
Fall time
t
d(off)
t
f
112
75
Gate Charge Characteristics
Total gate charge
Q
g
Q
gs
Q
gd
–
–
–
52
13
10
–
–
–
nC
nC
nC
V
DS
=-50V,I
D
=-22A ,
V
GS
=-10V, F=1MHz
Gate-source charge
Gate-drain charge
Diode characteristics
Diode forward voltage
1
V
SD
I
S
V
GS
=0V,I
SD
=-10A
T
C
= 25°C
–
–
-1.5
-28
V
A
Body Diode Continuous
Forward Current
1
Reverse recovery time
t
rr
–
–
35
42
–
–
ns
I
F
=-10A
Dl
F
/dt=100A/μs
Reverse recovery charge
Q
rr
nC
Note:1.The data tested by pulsed, pulse width<300μs,duty cycle<2%
2.The value of RthJA is measured by placing the device in a still air box which is one cubic foot.
3.
The EAS data shows Max.rating. The test condition is V
DD=-
50
V, VGS=-10V, L=
1
mH.IAS=-
22
A.
3 of 6
Rev 1.0.July. 2020
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
8
.
Typical Characteristics
4 of 6
Rev 1.0.July. 2020
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
5 of 6
Rev 1.0.July. 2020
-28A
，
-100V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
6 of 6
Rev 1.0.July. 2020
