KNSCHA-KN3M80120K

KN3M80120K  

KNSCHA  

1200V Silicon Carbide Power MOSFET 1200V G1

 

（

N Channel Enhancement

 

）

 

Features  

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High speed switching  

Very low switching losses  

IGBT-compatible driving voltage (18V for turn-on)  

Fully controllable dv/dt  

High blocking voltage with low on-resistance  

Fast intrinsic diode with low reverse recovery(Qrr)  

Temperature independent turn-off switching losses  

Halogen free, RoHS compliant  

Benefits  

TO-247-4L  

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Cooling effort reduction  

Efficiency improvement  

Reduced cooling requirements  

Increased power density  

Increased system switching frequency  

Applications  

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On-board charger/PFC  

EV battery chargers  

Booster/DC-DC converter  

Switch mode power supplies  

Table 1  

Key performance and package parameters  

I

DS  

R

DS(ON), typ  

(T

C

=25℃,  

(V

GS

= 18 V, I

D

= 20 A,  

T

J

=25℃)  

Type  

V

DS  

T

j,max  

Marking  

Package  

R

th (j-c,max)  

)

K

N3M80120D  

1200 V  

38 A  

8 0 mΩ  

175

℃

K

N3M80120D TO247-4L  

V01_02  

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2022.7.1  

8

KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

Table of contents  

Table of contents  

V01_02  

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KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

1

、

Maximum ratings  

Table 2  

Symbol  

Maximum rating

(Tc = 25°C unless otherwise specified)  

Parameter  

Value  

Unit  

Test Conditions  

Note  

Drain source voltage  

Gate source voltage  

Gate source voltage  

V

DS,max  

V

GS,max  

V

GSop  

V

GS

= 0 V,

I

D

= 100 μA  

1200  

V

V

V

Note1  

Absolute maximum values  

-8 /+22  

Recommended operational values  

V

GS

= 18 V,

 

T

C

= 25˚C  

-4 /+18  

38  

I

D  

Continuous drain current  

A

Fig.19  

27  

V

GS

= 18 V,

 

T

C

= 100˚C  

Pulsed drain current  

Power dissipation  

Pulse width t

P

limited by T

j,max  

80  

I

Fig.22  

Fig.20  

A

214  

W

T

C

=25˚C,T

J

=175˚C  

P

D  

Operating Junction and storage  

temperature  

-55 to +175  

260  

T T  

J ,

 

stg  

˚C  

Soldering temperature  

1.6mm (0.063”) from case for 10s  

M3 or 6-32 screw  

T

L  

˚C  

1

Nm  

Mounting torque  

T

M  

8.8  

lbf-in  

V

Note 1

：

when using MOSFET Body Diode

 

GS,max

= -4 / +22V  

2

、

Thermal characteristics  

Table 3  

Symbol  

Thermal characteristics

1  

Parameter  

Value  

Unit  

Test Conditions  

Note  

R

th(j-c)  

R

th(j-a)  

Thermal resistance from junction to case  

Thermal resistance from junction to ambient  

0.7  

35  

Fig.21  

°C/W  

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Page 3 of 13  

KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

3

、

Electrical characteristics  

3.1 Static

 

characteristics  

Table 4  

Symbol  

Static characteristics

(Tc = 25°C unless otherwise specified)  

Parameter  

Min. Typ.

 

Max. Unit  

Test Conditions  

Note  

1200  

2.3  

–

–

Drain-source breakdown voltage  

V

V

V

GS

= 0V, I

D

= 100μA  

V

DS

= V

GS

, I

D

= 5mA  

V

(BR)DSS  

2.8  

3.6  

V

GS(th)  

Fig.11  

Gate threshold voltage  

V

2.1  

1

–

–

–

V

T =175°C  

J

10  

μA  

nA  

V

DS

= 1200V, V

GS

= 0V  

V

GS

= 18V, V

DS

= 0V  

V

GS

= 18V, I

D

= 20A  

Zero gate voltage drain current  

Gate source leakage current  

I

DSS  

I

GSS  

–

100  

–

–

–

–

–

70  

85  

–

Current drain-source  

on-state resistance  

Fig.4,5  

,6  

R

DS(on)  

mΩ  

125  

10  

V

GS

= 18V, I

D

= 20A, T =175°C  

J

–

V

V

g

fs  

Transconductance  

Fig.7  

S

Ω

V

9.2  

–

T =175°C  

J

R

g,int  

–

Internal gate resistance  

V

AC

= 25mV, f=1MHz  

–

–

1.5  

4.3  

–

V

GS

= -4V, I

SD

= 10A  

V

GS

= -4V, I

SD

= 10A  

Fig.8,9,  

10  

V

Diode forward voltage  

SD  

–

3.8  

–

T =

 

175°C  

J

3.2 Dynamic

 

characteristics  

Table 5

 

Dynamic characteristics

(Tc = 25°C unless otherwise specified)  

Symbol  

Parameter  

Min. Typ.  

Max.  

Unit  

Test Conditions  

Note  

C

iss  

C

oss  

C

rss  

E

oss  

Q

gs  

Q

gd  

Q

g  

–

–

920  

–

Input capacitance  

Output capacitance  

Reverse capacitance  

Coss stored energy  

Gate source charge  

Gate drain charge  

Gate charge  

V

DS

= 1000V, V

GS

= 0V  

57  

–

pF  

μJ  

Fig.17,18  

Fig.16  

T =

 

25°C, V

AC

= 25mV  

J

–

–

–

–

–

3.9  

–

f=1MHz  

35  

–

–

–

–

7

V

DS

= 800V, V

GS

= -4/18V  

I

D

= 20A  

19  

40  

nC  

Fig.12  

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2022.7.18  

KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

3.3 Switching

 

characteristics  

Table 6

 

Dynamic characteristics

(Tc = 25°C unless otherwise specified)  

Symbol  

Parameter  

Min. Typ.

 

Max. Unit  

Test Conditions  

Note  

–

E

on  

E

off  

Turn on switching energy  

Turn off switching energy  

Turn on delay time  

Rise time  

–

–

–

–

–

–

320  

49  

19  

21  

15  

17  

Fig.25  

μJ  

–

–

–

–

–

V

DD

= 800V, V

GS

= -4/+15V  

I

D

= 20A, Rg = 0Ω  

L = 120uH  

t

d  

t

r  

Fig.27  

ns  

t

d  

Turn off delay time  

Fall time  

t

f  

Table 7  

Symbol  

Body diode characteristics  

Parameter  

Min. Typ. Max. Unit  

Test Conditions  

Note  

–

–

4.3  

3.8  

–

–

V

V

V

GS

= -4V, I

SD

= 10A  

Fig.8,9,  

10  

V

SD  

Diode forward voltage  

V

T =

 

175°C  

J

–

–

–

–

38  

41  

–

–

–

–

I

S  

Continuous diode forward current  

Reverse recovery time  

A

nS  

nC  

A

Tc = 25°C  

Note1  

V

R

= 800V, V

GS

= -4V  

I

D

= 20A  

t

rr  

405  

20  

Q

rr  

I

rrm  

Reverse recovery charge  

di/dt = 700A/μS  

Peak reverse recovery current  

T =

 

150°C  

J

Note 1: When using SiC Body Diode the maximum recommended VGS = -4 V  

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KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

4

、

Electrical characteristic diagrams  

Figure 1. Output characteristics T

J

= -40 ºC  

Figure 2. Output characteristics T

J

= 25 ºC  

Figure 3. Output characteristics T

J

= 175 ºC  

Figure 4. Normalized on-resistance vs. temperature  

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KN3M80120K  

KNSCHA  

Figure 5. On-resistance vs. drain current  

Figure 6. On-resistance vs. temperature  

for various gate voltage  

Figure 7. Transfer characteristic for  

various junction temperatures  

Figure 8. Body diode characteristic at T

J

= -40 ºC  

Figure 9. Body diode characteristic at T

J

= 25 ºC  

Figure 10. Body diode characteristic at T

J

= 175ºC  

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KN3M80120K  

KNSCHA  

Figure 11. Threshold voltage vs. temperature  

Figure 12. Gate charge characteristic  

Figure 13. 3rd quadrant characteristic at T

J

= -40 ºC  

Figure 14. 3rd quadrant characteristic at T

J

= 25 ºC  

Figure 15. 3rd quadrant characteristic at T

J

= 175 ºC  

Figure 16. Output capacitor stored energy  

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KN3M80120K  

KNSCHA  

Figure 17. Capacitances vs. drain-source voltage (0 – 200V)  

Figure 18. Capacitances vs. drain-source voltage (0 – 1200V)  

Figure 19. Continuous drain current derating vs.  

case temperature  

Figure 20. Maximum power dissipation derating vs.  

case temperature  

Figure 22. Safe operating area  

Figure 21. Transient thermal impedance  

(junction – case)  

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KNSCHA  

KN3M80120K  

Figure 23. Clamped Inductive switching energy vs.  

Figure 24. Clamped inductive switching energy vs. drain  

current (V

DD

= 800V)  

drain current (V

DD

= 600V)  

Figure 26. Clamped inductive switching energy vs. temperature  

Figure 25. Clamped inductive switching energy vs. R

G

(ext)  

Figure 27. Switching times vs. R

G

(ext)  

Figure 28. Reverse characteristics vs.T

J  

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KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

5

、

Package drawing

( TO-247-3L )  

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KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

6

、

Test conditions  

Figure A. Definition of switching times  

Figure B. Dynamic test circuit  

Figure C. Definition of body diode  

switching characteristics  

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KN3M80120K  

KNSCHA  

1200V SiC Power MOSFET  

Revision history  

Document version  

V01_00  

Date of release  

Description of changes  

2022-03-03  

2022-03-13  

2022-07-18  

——  

——  

——  

V01_01  

V01_02  

Attention  



RoHS compliance  

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the  

threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive  

2011/65/ EC (RoHS2), as implemented January 2, 2013.  



REACh compliance  

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency  

(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a  

SiChain representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance  

information (REACh Article 67) is also available upon request.  



Specifications of any and all products described or contained herein stipulate the performance, characteristics, and functions  

of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions  

of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be  

evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s  

products or equipment.  



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We assume no responsibility for equipment failures that result from using products at values that exceed, even momentarily,  

rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of  

any and all products described or contained herein.  

Any and all information described or contained herein are subject to change without notice due to product/technology  

improvement, etc.  

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2022.7.18