KUU-2SK3018

Part #	KUU-2SK3018
Download	KUU-2SK3018

2SK3018

N-channel MOSFET

SOT-23

FEATURES

3

z

z

z

z

z

Low on-resistance

1

Fast switching speed

2

1. GATE

Low voltage drive makes this device ideal for portable equipment

Easily designed drive circuits

Easy to parallel

2. SOURCE

3. DRAIN

Marking: KN

Equivalent circuit

MOSFET MAXIMUM RATINGS (T

a

= 25°C unless otherwise noted)

Units

Symbol Parameter

Value

30

V

DS

V

GSS

I

D

V

V

A

Drain-Source voltage

Gate-Source Voltage

±20

Continuous Drain Current

Power Dissipation

0.1

P

D

0.2

W

℃

℃

T

J

Junction Temperature

150

T

stg

R

θ

JA

Storage Temperature

-55-150

625

Thermal Resistance

from

Junction to Ambient

℃

/W

MOSFET ELECTRICAL CHARACTERISTICS(T

a

=25

℃

unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

V

(BR)

DS

S

V

GS

= 0V, I

D

= 10µA

30

V

µA

nA

V

Zero Gate Voltage Drain Current

Gate –Source leakage current

Gate Threshold Voltage

I

DSS

I

GSS

V

DS

=30V,V

GS

= 0V

V

GS

=

±±2

V, V

DS

= 0V

V

DS

= 3V, I

D

=100µA

V

GS

= 4V, I

D

=10mA

V

GS

=2.5V,I

D

=1mA

V

DS

=3V, I

D

= 10mA

0.2

±500

1.5

8

V

GS(th)

0.8

20

Ω

Drain-Source On-Resistance

R

DS(on)

13

Ω

Forward Transconductance

Dynamic Characteristics

*

Input Capacitance

g

FS

mS

C

iss

C

oss

C

rss

13

9

pF

pF

pF

V

DS

=5V,V

GS

=0V,f =1MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

*

Turn-On Delay Time

Rise Time

4

t

d(on)

t

r

15

35

80

80

ns

ns

ns

ns

V

GS

=5V, V

DD

=5V,

I

D

=10mA, R

g

=10

Ω

, R

L

=500

Ω

Turn-Off Delay Time

Fall Time

t

d(off)

t

f

*These parameters have no way to verify.

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2SK3018

Typical Characteristics

Output Characteristics

Transfer Characteristics

0.20

200

100

V

GS

=3.0V

T

a

=25

℃

4.0V

3.5V

Pulsed

0.15

0.10

0.05

0.00

30

10

V

GS

=2.5V

3

1

V

GS

=2.0V

V

GS

=1.5V

V

DS

=3V

T

a

=25

℃

Pulsed

0.3

0.1

0

1

2

3

4

0

1

2

3

4

5

GATE TO SOURCE VOLTAGE

V

GS

(V)

DRAIN TO SOURCE VOLTAGE

V

DS

(V)

R

DS(ON)

V

GS

R

DS(ON)

I

D

——

——

60

40

20

0

15

10

5

T

a

=25

℃

T

a

=25

℃

Pulsed

Pulsed

I

D

=100mA

I

D

=50mA

V

GS

= 2.5V

V

GS

= 4V

30

0

200

1

10

100

0

5

10

15

20

3

DRAIN CURRENT

I

D

(mA)

GATE TO SOURCE VOLTAGE

V

GS

(V)

I

S

——

V

SD

200

100

V

GS

=0V

T

a

=25

℃

Pulsed

30

10

3

1

0.3

0.1

0.2

0.4

0.6

0.8

1.0

SOURCE TO DRAIN VOLTAGE

V

SD

(V)

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