KUU-5N10
| Part # | KUU-5N10 |
Download  | KUU-5N10 |
5N10
Description
D
S
The 5N10
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
Battery protection
or in other Switching application.
G
General Features
V
DS
= 100V
I
D
=5A
510TF
90
mΩ @ V
GS
=
10V
R
DS(ON typ)
=
Application
Battery protection
Load switch
Uninterruptible power supply
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Rating
Units
Drain-Source Voltage
100
V
V
V
GS
Gate-Sou
r
ce Voltage
±
20
Continuous Drain Current, V
GS
@ 10V
1
5
A
A
I
D
@T
A
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
3.2
15
I
D
@T
A
=70
℃
I
DM
A
T
o
tal Power Dissipation
3
3.1
W
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
-55 to 150
100
℃
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient(steady state)
1
R
θ
JA
℃
/W
R
θ
JA
Thermal Resistance Junction-ambient(t<10s)
1
40
℃
/W
1/5
5N10
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
108
9
0
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=10V , I
D
=4A
125
145
2.5
1
mΩ
mΩ
V
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=2A
115
1.7
—
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=85
℃
V
GS
=
±
20V , V
DS
=0V
Drain-Source Leakage Current
uA
nA
—
50
±
100
4.6
—
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
V
DS
=0V , V
GS
=0V , f=1MHz
2.3
3.57
0.76
0.71
11
Q
g
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=30V , V
GS
=10V , I
D
=4A
—
nC
ns
—
—
V
DD
=30V , V
GS
=10V ,
R
G
=3.3
6
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
30
—
I
D
=1A
4
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
182
30
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Diode Forward Voltage
2
—
V
DS
=50V , V
GS
=0V , f=1MHz
pF
3.6
—
—
V
G
=V
D
=0V , Force Current
2
A
V
V
SD
—
1.2
V
GS
=0V , I
S
=1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2/5
5N10
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
12
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3/5
5N10
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.11 Gate Charge Waveform
Fig.10 Switching Time Waveform
4/5
5N10
Package Mechanical Data-SOT-23
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
5/5
