KUU-AO3400

AO3400  

N-Channel Enhancement Mode MOSFET  

Features  









Electrostatic sensitive devices  

R

DS(ON)

< 26.5m

Ω

@ V

GS

= 10V  

R

DS(ON)

< 32m

Ω

@ V

GS

= 4.5V  

R

DS(ON)

< 48m

Ω

@ V

GS

= 2.5V  

Mechanical Data  







Case: SOT-23  

Molding Compound: UL Flammability Classification Rating 94V-0  

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  

Method 208  

Ordering Information  

Part Number  

Package  

Shipping Quantity  

Marking Code  

AO3400  

SOT-23  

3000 pcs /

T

a

pe & Reel  

A01T  

Maximum Ratings

(@ T

A

= 25°C unless otherwise specified)  

Parameter  

Symbol  

Value  

Unit  

Drain-to-Source Voltage  

V

DSS  

V

GSS  

30  

±12  

5.7  

4.7  

25  

V

V

A

A

A

Gate-to-Source Voltage  

Continuous Drain Current (T

A

= 25°C)  

Continuous Drain Current (T

A

= 70°C)  

Pulsed Drain Current  

I

D  

I

DM  

Thermal Characteristics  

Parameter  

Symbol  

Value  

Unit  

Power Dissipation  

P

D  

R

θJA  

T

J  

1.4  

89  

W

°C/W  

°C  

Thermal Resistance Junction-to-Air  

Operating Junction Temperature Range  

Storage Temperature Range  

-55 ~ +150  

-55 ~ +150  

T

STG  

°C  

PAGE 1  

AO3400  

Electrical Characteristics

(@ T

A

= 25°C unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ. Max. Unit  

Static Characteristics  

V

DSS  

I

DSS  

I

GSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

V

GS

= 0V, I

D

=

250μA  

V

DS

= 30V, V

GS

= 0V  

V

GS

= ±12V, V

DS

= 0V  

30  

–

–

–

–

–

1

V

μA  

nA  

–

±100  

On Characteristics  

V

GS

= 10V, I

D

= 5.7A  

V

GS

= 4.5V, I

D

= 5A  

V

GS

= 2.5V, I

D

= 3A  

V

DS

= V

GS

, I

D

= 250

μA  

V

DS

= 5V, I

D

= 5.7A  

–

22  

25.4  

34  

26.5  

32  

48  

1.4  

–

R

DS(ON)  

Static Drain-Source On-resistance  

–

–

m

Ω  

V

GS(TH)  

g

FS  

Gate Threshold Voltage  

0.7  

–

1.0  

26  

V

S

Forward Transconductance  

Dynamic Characteristics  

C

ISS  

C

OSS  

C

RSS  

Q

G  

Input Capacitance  

–

–

–

–

–

–

–

–

–

–

900  

88  

–

–

–

–

–

–

V

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate-Charge  

V

pF  

nC  

f = 1.0MHz  

65  

10  

V

Q

GS  

Q

GD  

t

d(ON)  

t

r  

Gate to Source Charge  

Gate to Drain (Miller) Charge  

Turn-on Delay Time  

Turn-on Rise Time  

V

1.8  

3.75  

3.2  

3.5  

21.5  

2.7  

I

D

= 5.7A  

–

–

V

GS

= 10V  

V

ns  

R

L

= 2.6

Ω  

R

G

= 3

Ω  

–

–

t

d(OFF)  

t

f  

Turn-Off Delay Time  

Turn-Off Fall Time  

Source-Drain Diode Characteristics  

V

SD  

I

S  

Diode Forward Voltage  

I

S

= 1A, V

GS

= 0 V  

–

–

0.72  

–

1.0  

2

V

A

Maximum Body-Diode Continuous Current  

I

F

= 5.7A  

trr  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

–

–

16.8  

8

20  

–

nS  

nC  

d

I

/dt = 100A /

μ

s  

I

F

= 5.7A  

Qrr  

d

I

/dt = 100A /

μ

s  

PAGE 2  

AO3400  

Ratings and Characteristics Curves

(@ T

A

= 25

°

C unless otherwise specified)  

Fig 1

 

On-Region Characteristics  

Fig 2

 

On-Resistance vs. Drain Current  

and Gate Voltage  

Fig 3

 

On-Resistance vs. Gate-Source Voltage  

Fig 4

 

Body-Diode Characteristics  

Fig 5

 

On-Resistance vs. Junction Temperature  

Fig 6

 

Transfer Characteristics  

PAGE 3  

AO3400  

Fig 7

 

Capacitance Characteristics  

Fig 8

 

Gate-charge Characteristics  

Package Outline Dimensions

(Unit: mm)  

A

SOT-23  

Dimension  

Min.  

2.70  

1.10  

0.90  

0.30  

0.35  

1.80  

0.02  

0.05  

2.20  

Max.  

3.10  

1.50  

1.10  

0.50  

0.48  

2.00  

0.10  

0.15  

2.60  

E

A

B

C

D

E

G

H

J

K

B

J

D

G

H

C

K

Package Outline Dimensions

(Unit: mm)  

SOT-23  

0.95  

0.95  

2.00  

0.90  

0.80  

PAGE 4