KUU-AO3415

AO3415  

SOT-23 -20V

 

P Channel ESD Protection

 

沟道带静电保护  

MOS Field Effect Transistor

场效应管  

▉

Absolute Maximum Ratings

最大额定值  

Characteristic

特性参数  

Symbol

符号  

Rat

额定值

Unit

单位  

Drain-Source

V

o

ltage

漏极

–

源极电压  

Gate- Source

V

o

ltage

栅极

–

源极电压  

BV

DSS  

V

GS  

-20  

+12  

-5.6  

-23  

V

V

I

D

（

at T

A

= 25°C

）  

A

A

Drain Current (continuous)

漏极电流

–

连续  

Drain Current (pulsed)

漏极电流

–

脉冲  

I

DM  

P

D

(at T

A

= 25°C)  

ESD(HBM)  

mW  

kV  

Total Device Dissipation

总耗散功率  

1300  

ESD Protected Up to

人体模式静电保护范围  

Thermal Resistance Junction-Ambient

热阻  

Junction/Storage Temperature

结温/储存温度  

2.0  

98  

R

℃

/W  

℃

T

J

,

T

stg  

-55~150  

▉

Device Marking

产品字标  

AO341

5

=

3415  

1/5  

AO3415  

▉

Electrical Characteristics

电特性  

(T

A

=25

℃

unless otherwise noted

如无特殊说明，温度为

25

℃

)  

Characteristic  

特性参数  

Symbol  

符号  

Min  

Typ  

最小值 典型值 最大值  

Max  

Unit  

单位  

Drain-Source Breakdown

V

o

ltage  

漏极

–

源极击穿电压

(I

D

= -250uA,V

 

=0V)  

BV

DSS  

V

GS

(th)  

I

DSS  

-20  

-0.4  

—

—

-0.62  

—

—

-1  

V

V

GS  

Gate Threshold

V

o

ltage  

栅极开启电压

(I

D

= -250uA,V

 

= V

 

)  

GS  

DS  

Zero Gate

V

o

ltage Drain Current  

1

u

A  

u

A  

零栅压漏极电流

(V =0

V

,

 

V =

 

–

20V)  

GS  

DS  

Gate Body Leakage  

栅极漏电流

(V =+10

V

,

 

V

=

0V)  

I

GSS  

—

—

+15  

GS  

DS  

Static Drain-Source On-State Resistance  

静态漏源导通电阻

(I

D

= -5A,V

 

= -4.5V)  

R

DS(ON)  

—

31  

41  

42  

55  

m

Ω  

GS  

(I

D

= -4A,V

 

= -2.5V)  

GS  

Diode Forward

V

o

ltage Drop  

内附二极管正向压降

(I

SD

= -5A,V

 

=0V)  

—

1180  

125  

88  

11  

-1.2  

—

—

—

—

—

—

—

—

—

V

SD  

C

ISS  

C

OSS  

C

RSS  

—

—

—

—

—

—

—

—

—

V

GS  

Input Capacitance

输入电容  

pF  

pF  

pF  

nC  

nC  

nC  

ns  

(V =0

V

,

 

V =

 

–

10

V

,

f=1MHz)  

GS  

DS  

Common Source Output Capacitance  

共源输出电容

(V

GS

=0

V

,

V

DS

= -10

V

,

f=1MHz)  

Reverse Transfer Capacitance  

反馈电容

(V

GS

=0

V

,

V

DS

= -10

V

,

f=1MHz)  

Total Gate Charge

栅极电荷密度  

Q

g

(V =

 

-10

V

, I

 

=

–

4A, V

 

= -4.5V)  

DS  

D

GS  

Gate Source Charge

栅源电荷密度  

(V =

 

-10

V

, I

 

=

–

4A, V

 

= -4.5V)  

Q

gs  

2

DS  

D

GS  

Gate Drain Charge

栅漏电荷密度  

(V =

 

-10

V

, I

 

=

–

4A, V

 

= -4.5V)  

Q

gd  

3

DS  

D

GS  

Turn-ON Delay Time

开启延迟时间  

(

V

DS

= -10V I

D

= -1A, R

GEN

=2.5

Ω

,V

GS

= -4.5V

)  

t

d(on)  

t

r  

t

d(off)  

t

f  

14  

10  

20  

Turn-ON Rise Time

开启上升时间  

(

V

DS

= -10V I

D

= -1A, R

GEN

=2.5

Ω

,V

GS

= -4.5V

)  

ns  

Turn-OFF Delay Time

关断延迟时间  

(

V

DS

= -10V I

D

= -1A, R

GEN

=2.5

Ω

,V

GS

= -4.5V

)  

—

—

ns  

ns  

Turn-OFF Fall Time

关断下降时间  

(

V

DS

= -10V I

D

= -1A, R

GEN

=2.5

Ω

,V

GS

= -4.5V

)  

30  

—

2/5  

AO3415  

■

Typical Characteristic Curve

典型特性曲线  

Figure 1: Output Characteristics  

Figure 2: Transfer Characteristics  

Figure 3: On-Resistance vs. Drain Current  

Figure 4: On-Resistance vs. Temperature  

Figure 5: Capacitance Characteristics  

Figure 6: Gate-Charge Characteristics  

3/5  

AO3415  

■

Typical Characteristic Curve

典型特性曲线  

Figure 7: Diode Characteristics  

Figure 8: Safe Operating Area  

Figure 9: Transient Thermal Response Curve  

4/5  

AO3415  

▉

Dimension

外形封裝尺寸  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min  

Max  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.050  

0.089  

c

D

E

E1  

e

0.950TYP  

0.550REF  

0.037TYP  

0.022REF  

e1  

L

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0

o  

0.500  

8

o  

0.012  

0

o  

0.020  

8

o  

5/5