KUU-AO4406
| Part # | KUU-AO4406 |
Download  | KUU-AO4406 |
AO4406
N-Channel MOSFET
Product Summary
Features
•
Advanced high cell density Trench technology
•
Super Low Gate Charge
V
DS
R
DS(ON)
MAX
16mΩ@10V
I
D
MAX
10A
30V
•
Excellent CdV/dt effect decline
•
Green Device Available
23mΩ@4.5V
D
D
Application
D
D
•
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
• Networking DC
-DC Power System
•
Load Switch
S
S
S
G
SOP-8 top view
Schematic diagram
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
30
±20
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-55 to 150
10
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
40
10
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
1.4
89
W
P
D
Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.)
°C/W
R
θJA
1/4
AO4406
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol Parameter
Condition
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Min
Typ Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=0V
，
ID=250μA
VDS=30V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=250μA
VGS=10V
，
ID=8A
VGS=4.5V
，
ID=6A
30
—
—
1
—
—
—
1
V
uA
nA
V
BV
(BR)DSS
I
DSS
—
±100
2.5
16
I
GSS
1.5
11.5
18
V
GS(th)
—
—
Drain-Source On-State Resistance
mΩ
R
DS(on)
23
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
—
1250
—
pF
pF
pF
C
I
SS
VDS=15V
，
VGS=0V
，
f=1MHz
Output Capacitance
180
110
C
OSS
C
RSS
Reverse Transfer Capacitance
—
Switching Characteristics
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
15
2.5
3
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
Q
g
VDS=15V
，
ID=8A
，
VGS=10V
Q
gs
Q
gd
t
d(on)
t
r
5
3.5
19
3.5
VDS=15V
，
RL=1.8Ω
，
VGS=10V
，
RG=3Ω
t
d(off)
t
f
Source- Drain Diode Characteristics
Forward on
v
o
ltage
Tj=25
℃，
Is=1A
，
—
—
1.2
V
V
SD
2/4
AO4406
Typical Operating Characteristics
0
5
10
15
Qg -Total Gate Charge (nC)
VDS, Drain -Source Voltage (V)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
Fig1. Typical Output Characteristics
Tj – Junction Temperature (°C)
ID, Drain-Source Current (A)
Fig3. Normalized On-Resistance Vs. Temperature
Fig4. On-Resistance Vs. Drain-Source Current
5
15
25
0
10
20
30
VDS, Drain -Source Voltage (V)
Fig5. Maximum Safe Operating Area
VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source Voltage
3/4
AO4406
SOP-8 Package information
4/4
