KUU-AP2306GN

AP2306GN  

SOT-23 Plastic-Encapsulate MOSFETS  

N-Channel 20-V(D-S) MOSFET  

V(BR)DSS  

RDS(on)MAX  

ID  

25mΩ@4.5V  

35mΩ@2.5V  

20 V  

6A  

FEATURE  

APPLICATION  

※

TrenchFET Power MOSFET  

※

Load Switch for Portable Devices  

※

DC/DC Converter  

MARKING  

Equivalent Circuit  

WM36N  

1.GATE  

2.SOURCE  

3.DRAIN  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter Symbol  

Value  

Unit  

VDS  

VGS  

ID  

20  

Drain-Source Voltage  

Gate-Source Voltage  

V

±12  

6

Continuous Drain Current  

A

IS  

0.6  

Continuous Source-Drain Current(Diode Conduction)  

Power Dissipation  

PD  

1.25  

150  

W

RθJA  

TJ  

/W  

℃

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

150  

℃

℃

TSTG  

-55~+150  

Storage Temperature  

1/5  

AP2306GN  

Static Electrical Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol Test

 

Condition  

Min  

Typ  

Max  

Unit  

Static  

V(BR)DSS  

VGS(th)  

IGSS  

VGS = 0V, ID =250µA  

VDS =VGS, ID =250µA  

VDS =0V, VGS =±12V  

VDS =16V, VGS =0V  

20  

V

V

Drain-source breakdown voltage  

Gate-threshold voltage  

0.45  

1

±100  

1

nA  

µA  

Gate-body leakage  

IDSS  

Zero gate voltage drain current  

VGS =4.5V, ID = 6A  

VGS =2.5V, ID =4A  

22  

28  

25  

35  

mΩ  

mΩ  

RDS(on)  

Drain-source on-resistancea  

gfs  

VDS =5V, ID =6A  

IS=1A, VGS=0V  

8

S

V

Forward transconductancea  

Diode forward voltage  

VSD  

0.74  

1.28  

10  

Dynamic  

Qg  

Qgs  

Qgd  

Ciss  

Coss  

Crss  

nC  

nC  

nC  

pF  

pF  

pF  

Total gate charge  

7.7  

0.32  

2.1  

574  

70  

VDS =10V, VGS =4.5V,  

ID =6A  

Gate-source charge  

Gate-drain charge  

Input capacitance b  

Output capacitance b  

VDS =10V, VGS =0V,  

f=1MHz  

Reverse transfer capacitanceb  

Switchingb  

60  

td(on)  

tr  

ns  

ns  

ns  

ns  

Turn-on delay time  

78.7  

128  

453  

80.9  

Rise time  

VDD=10V  

RL=5.5Ω, ID ≈3.6A,  

VGEN=4.5V,Rg=6Ω  

td(off)  

Turn-off delay time  

Fall time  

tf  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2/5  

AP2306GN  

TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS  

VDS ±

 

Drain-to-Source Voltage (V)  

VGS ±

 

Gate-to-Source Voltage (V)  

ID ±

 

Drain Current (A)  

VDS ±

 

Drain-to-Source Voltage (V)  

Qg ±

 

Total Gate Charge (nC)  

TJ ± Junction Temperature ( C)  

3/5  

AP2306GN  

TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS  

VSD ±

 

Source-to-Drain Voltage (V)  

VGS ± Gate-to-Source Voltage (V)  

TJ ± Temperature ( C)  

Time (sec)  

Square Wave Pulse Duration (sec)  

4/5  

AP2306GN  

5/5