KUU-BSN20

BSN20  

N-Channel 50-V(D-S) MOSFETS  

V(BR)DSS  

RDS(on)MAX  

2Ω @ 10V  

ID  

50 V  

500mA  

2.2Ω @ 4.5V  

FEATURE :  

APPLICATION :  

※

TrenchFET Power MOSFET  

※

Load Switch for Portable Devices  

※

Low On-Resistance  

※

DC/DC Converter  

※

Low Input Capacitance  

※

Fast Switching Speed  

※

Low Input/Output Leakage  

※

Lead Free By Design/RoHS Compliant  

MARKING  

Equivalent Circuit  

1.GATE  

2.SOURC  

E

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter  

Symbol  

VDS  

VGS  

ID  

Value  

50  

Unit  

Drain-Source Voltage  

V

Gate-Source Voltage  

±20  

Continuous Drain Current  

500  

mA  

A

Pulsed Drain Current  

IDM  

IS  

1.2  

Continuous Source-Drain Current(Diode Conduction)  

Power Dissipation  

200  

mA  

W

PD  

0.6  

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

RθJA  

TJ  

200  

℃

/W  

150  

℃

Storage Temperature  

TSTG  

-55~+150  

1/3  

BSN20  

MOSFET ELECTRICAL CHARACTERISTICS  

Static Electrical Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol Test

 

Condition  

Min  

Typ  

Max  

Unit  

Static  

Drain-source breakdown voltage

 

V(BR)DSS

VGS = 0V, ID = 250µA  

50  

V

V

Gate-source threshold voltage  

Gate-source leakage  

VGS(th)

VDS =VGS, ID = 250µA  

0.45  

1.6  

±100  

0.5  

2

IGSS  

IDSS  

VDS =0V, VGS = ±20V  

VDS = 50V, VGS =0V  

VGS = 10V, ID = 500mA  

VGS = 4.5V, ID = 200mA  

VDS = 10V, ID = 0.2A  

IS=0.5A,VGS=0V  

nA  

µA  

Ω

Zero gate voltage drain current  

1.2  

1.3  

Drain-source on-state  

resistancea  

RDS(on)  

2.2  

Ω

Forward transconductancea  

Diode forward voltage  

Dynamic  

gfs  

80  

mS  

V

VSD  

0.85  

1.5  

Input capacitance  

22  

6

pF  

pF  

Ciss  

Coss  

Crss  

Qg  

VDS = 10V,VGS =0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

4

pF  

nC  

800  

100  

100  

49  

VDS = 25V,VGS =  

10V,  

nC  

nC  

Gate-source charge  

Gate-drain charge  

Gate resistance  

Switchingb  

Qgs  

Qgd  

Rg  

ID =0.5A  

f=1MHz  

Ω

Turn-on delay time  

Rise time  

3

ns  

ns  

ns  

ns  

td(on)  

tr  

VDD= 25V  

RL=25Ω, ID =0.5A,  

VGEN= 10V,Rg=50Ω  

3.1  

9.5  

8.3  

Turn-off delay time  

Fall time  

td(off)  

tf  

Drain-source body diode characteristics  

Continuous Source-Drain Diode

 

Current  

Tc=25

℃  

IS  

0.194  

1.2  

A

A

Pulsed Diode forward Curren  

ISM  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2/3  

BSN20  

3/3