KUU-KIRLML6401TRPBF

KIRLML6401TRPBF  

P-Channel 12-V(D-S) MOSFET  

V(BR)DSS  

RDS(on)MAX  

50mΩ@-4.5V  

85mΩ@-2.5V  

125mΩ@-1.8V  

ID  

-12 V  

-4.3A  

FEATURE  

APPLICATION  

●

TrenchFET Power MOSFET  

※

Load Switch for Portable Devices  

※

DC/DC Converter  

●

Ultra Low On-Resistance  

● Available in Tape and Reel  

MARKING  

Equivalent Circuit  

1.GATE  

2.SOURCE  

3.DRAIN  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter  

Symbol  

VDS  

VGS  

ID  

Value  

-12  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

±8  

Continuous Drain Current  

Pulsed Diode Curren  

-4.3  

A

IDM  

-34  

Power Dissipation  

PD  

1.4  

W

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

RθJA  

TJ  

100  

℃

/W  

150  

℃

Storage Temperature  

TSTG  

-55~+150  

1/3  

KIRLML6401TRPBF  

MOSFET ELECTRICAL CHARACTERISTICS  

Static Electrical Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Static  

Drain-source breakdown voltage  

Gate-source threshold voltage  

Gate-source leakage  

V(BR)DSS VGS

 

= 0V, ID = -250µA  

VGS(th) VDS

 

=VGS, ID = -250µA  

-12  

V

V

-0.4  

-1  

±100  

-1  

IGSS  

IDSS  

VDS =0V, VGS = ±8V  

VDS = -12V, VGS =0V  

VGS = -4.5V, ID = -4.3A  

nA  

µA  

mΩ  

mΩ  

mΩ  

S

Zero gate voltage drain current  

50  

Drain-source on-state resistancea  

RDS(on) VGS

 

= -2.5V, ID = -2.5A  

VGS = -1.8V, ID = -2A  

85  

125  

Forward transconductancea  

Diode forward voltage  

gfs  

VSD  

IS  

VDS = -4.5V, ID = -4.3A  

IS=-1A, VGS=0V  

8.3  

-0.8  

-1.2  

-1.3  

V

Continuous Source-Drain Diode

 

Current  

Dynamic  

A

Input capacitance  

Ciss  

Coss  

Crss  

Qg  

830  

180  

125  

10  

pF  

pF  

pF  

nC  

nC  

nC  

Ω

VDS = -10V,VGS =0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

VDS = -10V,VGS = -4.5V,  

ID = -4.3A  

Gate-source charge  

Gate-drain charge  

Qgs  

Qgd  

Rg  

1.4  

2.6  

6.5  

Gate resistance  

Switchingb  

f=1MHz  

Turn-on delay time  

td(on)  

tr  

11  

28  

45  

34  

22  

8

ns  

ns  

ns  

ns  

ns  

nC  

VDS= -10V  

RL=6Ω, ID ≈ -1A,  

VGEN=- 4.5V,Rg=3Ω  

Rise time  

Turn-off delay time  

td(off)  

tf  

Fall time  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

IF= -4.3A, dI/dt=100A/µs  

IF= -4.3A, dI/dt=100A/µs  

Trr  

Qrr  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2/3  

KIRLML6401TRPBF  

3/3