KUU-KNCE3080K
| Part # | KUU-KNCE3080K |
Download  | KUU-KNCE3080K |
KNCE3080K
N-Channel MOSFET
Product Summary
Features
V
DS
R
DS(ON)
MAX
6.5mΩ@10V
I
D
MAX
•
High density cell design for ultra low Rdson
• Fully
characterized avalanche voltage and
current
30V
80A
10mΩ@5V
• Good stability and uniformity with high E
AS
• Excellent package for good heat dissipation
D
Application
•
Load switching
• Hard switched and high frequency circuits
• Uninterruptible power supply
D
G
S
TO-252 top view
Schematic diagram
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
30
±20
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-50 to 155
80
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
170
80
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
Single pulse a
v
a
lanche energy
83
W
mJ
P
D
306
E
AS
1/4
KNCE3080K
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol Parameter
Condition
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Min
Typ Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=0V
，
ID=250μA
VDS=30V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=250μA
VGS=10V
，
ID=30A
VGS=5V
，
ID=24A
30
—
—
1
—
—
—
1
V
uA
nA
V
BV
(BR)DSS
I
DSS
—
±100
3
I
GSS
1.6
4.7
7.3
V
GS(th)
—
—
6.5
10
Drain-Source On-State Resistance
mΩ
R
DS(on)
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
2015
—
—
—
pF
pF
pF
C
I
SS
VDS=15V
，
VGS=0V
，
f=1MHz
Output Capacitance
250
C
OSS
C
RSS
Reverse Transfer Capacitance
235
Switching Characteristics
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
61
8.3
7.5
21
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
Q
g
VDS=10V
，
ID=30A
，
VGS=10V
Q
gs
Q
gd
t
d(on)
t
r
16
VDD=10V
，
ID=30A
，
VGS=10V
，
RG=2.7Ω
59
t
d(off)
t
f
10.3
Source- Drain Diode Characteristics
Forward on
v
o
ltage
Tj=25
℃，
Is=24A
，
—
—
1.2
V
V
SD
2/4
KNCE3080K
Typical Operating Characteristics
100
10
8
5V
4.5V
10V
V
DS
=30V
80
4V
60
40
20
0
6
4
3.5V
2
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
Qg -Total Gate Charge (nC)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
VDS, Drain -Source Voltage (V)
Fig1. Typical Output Characteristics
1.8
1.6
1.4
1.2
1
10
8
6
4
2
0
VGS=10V
ID=30A
5V
10V
0.8
0
25
50
75
100
125
150
175
0
20
40
60
80
Tj – Junction Temperature (°C)
ID, Drain-Source Current (A)
Fig3. Normalized On-Resistance Vs. Temperature
Fig4. On-Resistance Vs. Drain-Source Current
1000
100
10
3000
2500
2000
1500
1000
500
Limit by R
DS(ON)
Ciss
100us
1ms
10ms
100ms
DC
Coss
Crss
1
0
0.1
1
10
VDS, Drain -Source Voltage (V)
Fig5. Maximum Safe Operating Area
100
0
5
10
VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source Voltage
15
20
25
30
3/4
KNCE3080K
TO-252 Package information
4/4
