KUU-SI2306

SI2306  

N-Channel 30-V(D-S) MOSFET  

V(BR)DSS  

RDS(on)MAX  

ID  

65mΩ@10V  

85mΩ@4.5V  

30 V  

4A  

FEATURE  

APPLICATION  

※

TrenchFET Power MOSFET  

※

Load Switch for Portable Devices  

※

DC/DC Converter  

MARKING  

Equivalent Circuit  

1.GATE  

2.SOURCE  

3.DRAIN  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter  

Symbol  

VDS  

VGS  

ID  

Value  

30  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

±20  

Continuous Drain Current  

4

Pulsed Diode Curren  

IDM  

IS  

20  

A

Continuous Source-Drain Current(Diode Conduction)  

Power Dissipation  

0.72  

0.75  

150  

PD  

W

℃

/W  

℃

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

RθJA  

TJ  

150  

Storage Temperature  

TSTG  

-55~+150  

℃

1/4  

SI2306  

MOSFET ELECTRICAL CHARACTERISTICS  

Static Electrical Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Static  

V(BR)DSS  

VGS(th)  

IGSS  

VGS = 0V, ID = 250µA  

VDS =VGS, ID = 250µA  

VDS =0V, VGS = ±20V  

VDS = 30V, VGS =0V  

VGS = 10V, ID = 3.5A  

VGS = 4.5V, ID = 2.8A  

VDS = 4.5V, ID = 4A  

IS=1.25A,VGS=0V  

Drain-source breakdown voltage  

Gate-source threshold voltage  

Gate-source leakage  

30  

1

V

V

3

±100  

1

nA  

µA  

mΩ  

mΩ  

S

IDSS  

Zero gate voltage drain current  

44  

58  

7

65  

RDS(on)  

Drain-source on-state resistancea  

85  

gfs  

Forward transconductancea  

VSD  

Diode forward voltage  

Dynamic  

0.8  

1.28  

V

Ciss  

Coss  

Crss  

Qg  

Input capacitance  

305  

65  

29  

3

pF  

pF  

pF  

nC  

nC  

nC  

Ω

VDS = 10V,VGS =0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

4.5  

VDS = 10V,VGS = 4.5V,  

ID = 4A  

Qgs  

Qgd  

Rg  

Gate-source charge  

Gate-drain charge  

1.6  

0.6  

5

f=1MHz  

Gate resistance  

Switchingb  

td(on)  

tr  

Turn-on delay time  

7

12  

14  

6

11  

18  

25  

10  

ns  

ns  

ns  

ns  

VDD= 10V  

RL=10Ω, ID ≈ 1A,  

VGEN= 4.5V,Rg=6Ω  

Rise time  

td(off)  

tf  

Turn-off delay time  

Fall time  

Drain-source body diode characteristics  

IS  

Continuous Source-Drain Diode

 

Current  

Tc=25  

1.2  

20  

A

A

℃

ISM  

Pulsed Diode forward Curren  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2/4  

SI2306  

TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS  

3/4  

SI2306  

4/4