KUU-WPM2015-3-TR

WPM2015-3/TR  

P-Channel 20-V(D-S)

 

MOSFET  

V(BR)DSS  

RDS(on)MAX  

110mΩ@ -4.5V  

150mΩ@ -2.5V  

ID  

-20 V  

-2.4A  

FEATURE  

APPLICATION  

●

TrenchFET Power MOSFET  

●

Supper high density cell design  

※

Load Switch for Portable Devices  

※

DC/DC Converter  

●

Extremely Low Threshold Voltage  

※

Power Switch  

●

Excellent ON resistance for higher DC current  

MARKING  

Equivalent Circuit  

1.GATE  

2.SOURCE  

3.DRAIN  

WT1 = Device Code  

* = Month (A~Z)  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter Symbol  

Value  

-20  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

VDS  

VGS  

ID  

V

±8  

Continuous Drain Current  

Pulsed Diode Curren  

-2.4  

A

IDM  

PD  

-10  

Power Dissipation  

1.1  

W

℃

/W  

℃

Thermal Resistance from Junction to Ambient (t≤10s)  

Operating Junction  

RθJA  

TJ  

125  

150  

Storage Temperature  

TSTG  

-55~+150  

℃

1/3  

WPM2015-3/TR  

MOSFET ELECTRICAL CHARACTERISTICS  

Static Electrical Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol Test

 

Condition  

Min  

Typ  

Max  

Unit  

Static  

V(BR)DSS  

VGS(th)  

IGSS  

VGS = 0V, ID = -250µA  

VDS =VGS, ID = -250µA  

VDS =0V, VGS = ±8V  

VDS = -16V, VGS =0V  

VGS = -4.5V, ID = -2.7A  

VGS = -2.5V, ID = -2A  

VDS = -4.5V, ID = -2.4A  

IS= -1A,VGS=0V  

-20  

V

V

Drain-source breakdown voltage  

Gate-source threshold voltage  

Gate-source leakage  

-0.4  

-1  

±100  

-1  

nA  

µA  

mΩ  

mΩ  

S

IDSS  

Zero gate voltage drain current  

81  

103  

10  

110  

150  

RDS(on)  

Drain-source on-state resistancea  

Forward transconductancea  

gfs  

VSD  

-0.8  

-1.5  

V

Diode forward voltage  

Dynamic  

Ciss  

Coss  

Crss  

Qg  

pF  

pF  

pF  

nC  

nC  

nC  

Ω

Input capacitance  

534  

62  

VDS = -10V,VGS =0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

54  

7.3  

1.25  

1.2  

VDS = -10V,VGS = -4.5V,  

ID = -2.4A  

Qgs  

Qgd  

Rg  

Gate-source charge  

Gate-drain charge  

f=1MHz  

Gate resistance  

Switchingbtr  

0.5  

3.2  

td(on)  

tr  

ns  

ns  

ns  

ns  

Turn-on delay time  

8.0  

6.4  

41  

7

VDS= -10V  

RL=3.5Ω, ID ≈ -1A,  

VGEN= -4.5V,Rg=3Ω  

Rise time  

td(off)  

tf  

Turn-off delay time  

Fall time  

Drain-source body diode characteristicstr  

Continuous Source-Drain Diode

 

Current  

IS  

Tc=25  

-1.2  

-10  

A

A

℃

ISM  

Pulsed Diode forward Curren  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 10 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2/3  

WPM2015-3/TR  

3/3