KY-BT131
| Part # | KY-BT131 |
| Download | KY-BT131 |
BT131 S
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1A TR
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4
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TR
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ShenZhenHanKingyuan
Electronic CO.,Ltd
TR
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BT131 S
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4
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ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
1
2
3
1
3
2
SOT-223
TO-92
2
1
1
2
3
3
SOT-223-2L
SOT-89
2
1
3
SOT-89-2L
FEATURES
IT(RMS): 1A
VGT: 1.2V
VDRM VRRM:600Vand800V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay
,
AC Motor speed regulation and so on.
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BT131 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
02.
4
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Absolute Maximum Ratings
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Conditions
BT131
Ratings
Unit
V
VDRM
600-800
Repetitive Peak Off-State Voltage
VRRM
IT(RMS) R.M.S
On-State Current
Tc=110°C
Tp=10ms
Tp=10ms
Tj=125°C
1
A
A
ITSM
I²t
Surge On-State Current
I²t for fusing
12
0.72
0.3
1.2
A²s
W
A
PG(AV) Average
Gate Power Dissipation
IGM
Tj
Peak Gate Current
tp=20us Tj=125°C
Operating Junction Temperature
40~125
40~150
°C
°C
~
~
TSTG Storage
Temperature
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Test Conditions
Value
Unit
Tj=25°C
Tj=110°C
Tj=25°C
Tj=110°C
≤10
≤200
≤10
uA
uA
uA
uA
IDRM Repetitive
Peak Off-State Current
IRRM Repetitive
Peak Reverse Current
≤200
VTM
VGD
Forward “on” voltage
IT=1.6A tp=380us
≤1.5
≥0.2
V
V
Gate non-trigger voltage
VD=VDRM, Tj=110°C
I,II,III
IV
≤5
mA
mA
IH
Holding current
VD=12V ,IGT=0.1A
VD=12V
≤10
VGT
IGT
Gate trigger voltage
Gate trigger current
≤1.2
V
I,II,III
IV
≤3
≤7
mA
mA
VD=12V
I,II,III
IV
≥50
≥10
A /us
A /us
Critical-rate of rise of
commutation current.
IT=1A
di/dt
IG==0.2A,dIg/dt=0.2A/us
Critical-rate of rise of commutation
voltage
dv/dt
TJ=110°C VD=2/3VDRM
≥30
V/us
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BT131 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
03.
FIG1
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
I
T(RMS)
(A)
1.2
P(w)
1.6
α=180°
TO-92
SOT-89-2L SOT-89
SOT-223 SOT-223-2L
1.0
1.2
0.8
0.6
0.4
0.8
0.4
0
0.2
0
I
T(RMS)
(A)
T
C
(
℃
)
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
FIG3
FIG4
Surge peak on-state current versus
number of cycles
On-state characteristics (maximum
values)
I
TM
(A)
I
TSM
(A)
20
20
t=20ms
One cycle
10
16
12
8
Tj=Tjmax
1
Tj=25
℃
4
0
V
TM
(V)
Number of cycles
100
0.1
0
1
2
3
4
5
1
10
1000
FIG5
FIG6
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 100A/
μ
s)
2
I
TSM
(A), I
2
t (A s)
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
3.0
400
2.5
2.0
1.5
1.0
0.5
0.0
I
TSM
dI/dt
100
I
GT4
I
H
&I
L
10
I
GT1-3
I
2
t
Tj(
℃
)
40 60
tp(ms)
1
0.01
-40 -20
0
20
80 100
120 140
0.1
1
10 20
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ShenZhenHanKingyuan
Electronic CO.,Ltd
04.
PACKAGE MECHANICAL DATA
N
Dimensions
Ref.
Millimeters
Inches
Typ.
Typ.
Min.
4.45
4.32
3.18
0.407
0.60
–
Max.
5.20
5.33
4.19
Min.
0.175
0.170
0.125
Max.
0.205
0.210
0.165
0.021
0.031
–
A
B
C
D
E
F
V
A
0.533 0.016
0.80
–
0.024
1.1
–
–
0.043
0.050
0.091
–
1.27
2.30
–
–
G
H
J
E
–
–
–
–
0.36
12.70
2.04
1.86
–
0.50
15.0
2.66
2.06
4.3
0.014
0.500
0.080
0.073
–
0.020
0.591
0.105
0.081
0.169
K
N
P
V
J
D
G
TO-92
SOT-89-2L
PAGE.04/06
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BT131 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
05.
PACKAGE MECHANICAL DATA
SOT-223
SOT-89
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BT131 S
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ShenZhenHanKingyuan
Electronic CO.,Ltd
06.
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
D
B
Typ.
0.059 0.063
Min.
1.50
0.01
2.90
0.60
0.22
6.30
3.30
Max.
1.80
0.10
3.10
0.80
0.32
6.70
3.70
Min.
Max.
0.071
0.004
0.122
0.031
0.013
0.264
0.146
A
A1
B
1.60
0.06
3.00
0.70
0.254
6.50
3.50
0.002
0.118
0.001
0.114
B1
C
0.024 0.028
0.009 0.010
0.248 0.256
0.130 0.138
D
F1
B1
E
F
F
4.60
2.30
0.181
0.091
F1
G
H
J
0.70
1.50
6.70
0.90
1.75
7.00
1.10
2.00
7.30
0.028 0.035
0.059 0.069
0.264 0.276
0.043
0.079
0.287
G
H
K
L
0.90
0.10
0.035
0
0.20
0
0.004
0.008
SOT-223-2L
ShenZhenHanKingyuan
Electronic CO.,Ltd
Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�
Electronic assumes no responsibility for the consequences of use of such information nor for any
infringement of patents or other rights of third parties which may result from its use.Specifications
mentioned in this publication are subject to change without notice.This publication supersedes and�
replaces all information previously supplied.�
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�
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Printed in Shenzhen – All Rights Reserved�
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