KY-BT138S-800E

Part #KY-BT138S-800E
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KY-BT138S-800E
BT138 S
 
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12A TR
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4
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dra nts
 
TR
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ShenZhenHanKingyuan  
Electronic CO.,Ltd  

TR
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BT1 38
 
S e r
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4 Q
 
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ShenZhenHanKingyuan  
Electronic CO.,Ltd  
01.  
2
1
1
2
3
3
TO-220C  
TO-252  
2
1
1
2
3
3
TO-263  
TO-220F Insulated  
FEATURES  
IT(RMS): 12A  
VGT: 1.5V  
VDRM VRRM:600and800V  
APPLICATIONS  
Washing machine,vacuums, massager,solid state relay
,
AC Motor speed regulation and so on.  
PAGE.01/06  

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BT138 S
 
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ShenZhenHanKingyuan  
Electronic CO.,Ltd  
02.  
Absolute Maximum Ratings

(Tj=25°C unless otherwise specifed)  

Symbol Parameter  
Conditions  
Ratings  
Unit  
BT138-600  
BT138-800  
600  
800  
V
V
VDRM  
VRRM  
Repetitive Peak Off-State Voltage  
IT(RMS) R.M.S
 
On-State Current  
ITSM Surge
 
On-State Current  
Tc=110°C  
12  
A
A
tp=16.7ms/tp=10ms  
Tp=10ms  
115/120  
I²t  
I²t for fusing  
70  
1
A²s  
W
A
PG(AV) Average
 
Gate Power Dissipation  
Tj=125°C  
IGM  
Tj  
Peak Gate Current  
tp=20us Tj=125°C  
4
Operating Junction Temperature  
40~125  
40~150  
°C  
°C  
~
~
TSTG Storage
 
Temperature  
Electrical Characteristics
 

(Tj=25°C unless otherwise specifed)  

Value  
Symbol Parameter  
Test Conditions  
Unit  
D
E
F
G
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
≤5  
≤1  
≤5  
≤1  
uA  
mA  
uA  
Repetitive Peak Off-State  
Current  
IDRM  
IRRM  
Repetitive Peak Reverse  
Current  
mA  
VTM Forward
 
“on” voltage  
VGT Gate
 
trigger voltage  
IT=35A tp=380us  
VD=12V ,RL=30Ω  
≤1.55  
≤1.5  
V
V
I,II,III  
IV  
≥50  
≥10  
A /us  
A /us  
mA  
Critical-rate of rise of  
di/dt  
Tj=125°C ,IG=2XIGT,tr  
≤100ns,F=100Hz  
commutation current.  
I,II,III  
IV  
≤5  
≤10  
≤25  
≤25  
≤70  
≤50  
IGT  
IH  
Gate trigger current  
Holding current  
VD=12V RL=30Ω  
IT=0.2A  
≤10  
≤100  
mA  
≤10  
≤25  
≤30  
≤60  
mA  
V
VD=VDRM  
TJ=125°C,RL=3.3KΩ  
TJ=125°C  
VGD Gate
 
non-trigger voltage
 
ALL  
≥0.2  
Critical-rate of rise of  
dv/dt  
≥5  
≥10  
≥50  
≥200  
V/us  
VD=2/3VDRM Gate  
commutation voltage  
PAGE.02/06  

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03.  
ShenZhenHanKingyuan  
Electronic CO.,Ltd  
FIG1  
FIG2  
RMS on-state current versus case  
temperature  
Maximum power dissipation versus RMS  
on-state current  
P(w)  
I
T(RMS)
(A)  
20  
18  
α=180°  
15  
12  
9
15  
10  
TO-252/  
TO-220C TO-263  
TO-220F(Ins)  
6
3
0
5
0
I
T(RMS)
(A)  
Tc (
℃
)
 
0
3
6
9
12  
15  
0
25  
50  
75  
100  
125  
FIG3  
FIG4  
Surge peak on-state current versus  
number of cycles  
On-state characteristics (maximum  
values)  
I
TSM
(A)  
I
TM
(A)  
105  
100  
t=20ms  
One cycle  
90  
75  
60  
45  
Tj=Tjmax  
10  
30  
Tj=25
℃
 
15  
0
V
TM
(V)  
Number of cycles  
100  
1
1
10  
1000  
0
1
2
3
4
5
FIG5  
FIG6  
FIG.6:
Relative variations of gate trigger current,  
holding current and latching current versus  
junction temperature  
Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp<20ms, and  
corresponging value of I

2

t (dI/dt < 100A/
μ
s)  
I
TSM
(A), I

2

t (A

2

s)  
1000  
I
GT
(Tj) /I
GT
(Tj=25
℃
)
 
4.0  
3.0  
2.0  
1.0  
0.0  
I
TSM  
I
GT3  
I
GT4  
dI/dt  
100  
I
GT1
&I
GT2  
I

2

t  
Tj (
℃
)  
40 60  
tp(ms)  
10  
0.01  
-40 -20  
0
20  
80 100  
120 140  
0.1  
1
10 20  
PAGE.03/06  

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ShenZhenHanKingyuan  
Electronic CO.,Ltd  
04.  
4 Q
 
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FIG7  
7
FIG  
8
FIG.7:
Relative variations of holding current  
FIG.8:
Relative variations of latching current  
versus junction temperature  
versus junction temperature  
I
H
(Tj) /I
H
(Tj=25
℃
)
 
I
L
(Tj) /I
L
(Tj=25
℃
)  
3.0  
3.0  
2.5  
2.0  
2.5  
2.0  
I
L  
1.5  
1.0  
1.5  
1.0  
I
H  
0.5  
0.0  
0.5  
0.0  
Tj (
℃
)  
40 60  
Tj (
℃
)  
40 60  
-40 -20  
0
20  
80 100 120
 
140  
-40 -20  
0
20  
80 100 120
 
140  
PACKAGE MECHANICAL DATA  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.40  
0.70  
0.45  
1.23  
2.20  
8.90  
9.90  
6.30  
Max.  
Min.  
0.173  
0.028  
0.018  
0.048  
0.087  
0.350  
0.390  
0.248  
Max.  
0.181  
0.035  
0.024  
0.052  
0.102  
0.390  
0.406  
0.272  
E
A
4.60  
0.90  
0.60  
1.32  
2.60  
9.90  
10.3  
6.90  
A
B
C2  
C
C2  
C3  
D
E
C3  
C
L2  
F
2.54  
3.39  
0.1  
G
28.0  
29.8  
H
1.102  
1.173  
0.133  
L1  
L2  
L3  
Φ
B
G
1.14  
2.65  
1.70  
2.95  
0.045  
0.104  
0.067  
0.116  
TO-220C  
3.6  
0.142  
PAGE.04/06  

TR
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BT138 S
 
e r
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ShenZhenHanKingyuan  
Electronic CO.,Ltd  
05.  
4
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dra nts  
PACKAGE MECHANICAL DATA  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
4.50  
0.74  
0.47  
2.45  
2.60  
8.80  
9.80  
6.40  
Max.  
4.90  
0.83  
0.65  
2.75  
3.00  
9.30  
10.4  
6.80  
Min.  
0.177  
0.029  
0.019  
0.096  
0.102  
0.346  
0.386  
0.252  
Max.  
A
0.193  
A
B
5mm  
.
3
ax  
M
E
0.80  
0.031 0.033  
0.026  
0.108  
0.118  
0.366  
0.410  
0.268  
0.1  
C2  
Φ
C
C2  
C3  
D
V1  
E
F
C3  
2.54  
3.63  
G
L2  
28.0  
1.14  
29.8  
1.70  
1.102  
0.045  
1.173  
0.143  
0.067  
0.130  
45°  
H
L1  
L2  
L3  
V1  
B
C
G
3.30  
45°  
TO-220F Ins  
TO-263  
PAGE.05/06  

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BT138 S
 
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4
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06.  
ShenZhenHanKingyuan  
Electronic CO.,Ltd  
PACKAGE MECHANICAL DATA  
E
B2  
A
C2  
Dimensions  
Ref.  
Millimeters  
Typ.  
Inches  
Typ.  
Min.  
2.20  
0.03  
0.55  
5.10  
0.45  
2.70  
6.00  
6.40  
4.40  
9.35  
1.30  
1.37  
Max.  
2.40  
0.23  
0.65  
5.40  
0.55  
2.90  
6.20  
6.70  
4.70  
10.6  
1.70  
1.50  
Min.  
0.086  
0.001  
0.022  
0.200  
0.018  
0.106  
0.236  
0.252  
0.173  
0.368  
0.051  
0.054  
Max.  
0.095  
0.009  
0.026  
0.213  
0.022  
0.114  
0.244  
0.264  
0.185  
0.417  
0.067  
0.059  
A
A2  
B
B2  
C
C2  
D
C
B
E
G
G
DETAIL A  
H
L1  
L2  
L3  
L4  
0.8  
0.8  
4
°
 
0.031  
0.031  
4
°  
V1  
V2  
E1  
0
°  
8
°  
0
°  
8
°  
L2  
DETAIL A  
TO-252  
ShenZhenHanKingyuan  
Electronic CO.,Ltd  
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Electronic assumes no responsibility for the consequences of use of such information nor for any  
infringement of patents or other rights of third parties which may result from its use.Specifications  
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replaces all information previously supplied.�  
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2013 Shenzhen HanKingyuan Electronic –
 
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PAGE.06/06