KY-BT151-600R
| Part # | KY-BT151-600R |
Download  | KY-BT151-600R |
BT151 S
e r
i
e s
12A S CRs
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
2
1
1
2
3
3
TO-220C
TO-252
2
1
1
2
3
3
Sensitive Gate SCR
TO-251
TO-263
FEATURES
IT(RMS):12A
VGT: 1V
VDRM VRRM:600Vand800V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay
，
AC Motor speed regulation and so on.
PAGE.01/06
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
02.
Absolute Maximum Ratings
(Tj=25°C unless otherwise specifed)
Symbol Parameter
VDRM
Conditions
BT151
Ratings
600
Unit
Repetitive Peak Off-State Voltage
V
VRRM
IT(RMS) R.M.S
On-State Current
Tc=105°C
12
7.5
A
A
IT(AV)
ITSM
I²t
On-state average current
Surge On-State Current
I²t for fusing
TC=105°C
Tp=10ms/tp=8.3ms
Tp=10ms
120/132
75
A
A²s
W
W
°C
PGM
PG(AV)
Tj
Peak Gate Power Dissipation
Average Gate Power Dissipation
Operating Junction Temperature
Tj=125°C
2
Tj=125°C
0.5
40~125
40~150
～
～
TSTG
Storage Temperature
°C
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Test Conditions
Value
Unit
Tc=25°C
Tc=125°C
Tc=25°C
Tc=125°C
≤10
≤1
uA
mA
uA
IDRM
IRRM
Repetitive Peak Off-State Current
≤10
≤1
Repetitive Peak Reverse Current
mA
VTM
VGT
di/dt
IGT
IL
Forward “on” voltage
Gate trigger voltage
Critical rate of rise of on-state current
Gate trigger current
IT=23A, tp=380us
VD=12V ,RL=30Ω
≤1.7
≤1.0
≥50
≤20
≤40
≤30
V
V
Tj=125°C, IG=2xIGT,
tr≤100ns
VD=12V, IT=0.1A
IG=1.2IGT
A/us
mA
mA
mA
Latching current
IH
Holding current
IT=0.1A
VD=VDRM,
VGD
dv/dt
Gate non-trigger voltage
≥0.25
≥200
V
TJ=125°C,RL=3.3KΩ,RGK=1KΩ
TJ=125°C, VD=2/3VDRM,
Gate
open circuit
Critical-rate of rise of commutation
voltage
V/us
Rth(j-c)
Rth(j-a)
Thermal resistance
Thermal resistance
Junction to case
1
°C/W
°C/W
Junction to ambient
50
PAGE.02/06
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
03.
FIG1
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
I
T(RMS)
(A)
18
P(w)
20
α=180°
15
TO-220C/ TO-263
15
10
TO-251/
TO-252
12
9
6
5
0
3
0
I
T(RMS)
(A)
Tc (
℃
)
0
3
6
9
12
16
0
25
50
75
100
125
FIG3
FIG4
Surge peak on-state current versus
number of cycles
On-state characteristics (maximum
values)
I
TM
(A)
I
TSM
(A)
100
140
tp=10ms
One cycle
120
100
80
Tj=125
℃
10
60
40
20
Tj=25
℃
V
TM
(V)
Number of cycles
100
0
1
1
0
1
2
3
4
5
10
1000
FIG5
FIG6
FIG.6:
Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I
2
t (dI/dt < 100A/
μ
s)
2
I
TSM
(A), I
2
t (A s)
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25
℃
)
3.0
1000
2.5
2.0
I
TSM
I
GT
dI/dt
100
I
H
&I
L
1.5
1.0
0.5
0.0
I
2
t
Tj(
℃
)
40 60
tp(ms)
10
0.01
-40 -20
0
20
80 100
120 140
0.1
1
10
PAGE.03/06
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
04.
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.70
0.45
1.23
2.20
8.90
9.90
6.30
Max.
4.60
0.90
0.60
1.32
2.60
9.90
10.3
6.90
Min.
0.173
0.028
0.018
0.048
0.087
0.350
0.390
0.248
Max.
0.181
0.035
0.024
0.052
0.102
0.390
0.406
0.272
E
A
A
B
C2
C
C2
C3
D
E
C3
C
L2
F
2.54
3.39
0.1
G
28.0
29.8
H
1.102
1.173
0.133
L1
L2
L3
Φ
B
G
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
TO-220C
3.6
0.142
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.90
0.55
5.10
0.76
0.45
0.48
6.00
6.40
Max.
Min.
Max.
0.095
0.047
0.026
0.213
0.033
0.024
0.024
0.244
0.264
2.40
1.20
0.65
5.40
0.85
0.62
0.62
6.20
6.70
0.086
0.035
0.022
0.200
0.030
0.018
0.019
0.236
0.252
A
A2
B
E
A
B2
C2
B2
B3
C
C2
D
B3
B
E
2.30
0.091
G
16.0
8.90
1.80
1.37
17.0
9.40
1.90
1.50
H
0.630
0.350
0.071
0.054
0.669
0.370
0.075
0.059
L
G
C
L1
L2
V1
A2
4°
4°
TO-251
PAGE.04/06
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
05.
PACKAGE MECHANICAL DATA
E
B2
A
C2
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.20
0.03
0.55
5.10
0.45
2.70
6.00
6.40
4.40
9.35
1.30
1.37
Max.
2.40
0.23
0.65
5.40
0.55
2.90
6.20
6.70
4.70
10.6
1.70
1.50
Min.
0.086
0.001
0.022
0.200
0.018
0.106
0.236
0.252
0.173
0.368
0.051
0.054
Max.
0.095
0.009
0.026
0.213
0.022
0.114
0.244
0.264
0.185
0.417
0.067
0.059
A
A2
B
B2
C
C2
D
C
B
E
G
G
DETAIL A
H
L1
L2
L3
L4
0.8
0.8
4
°
0.031
0.031
4
°
V1
V2
E1
0
°
8
°
0
°
8
°
L2
DETAIL A
TO-252
TO-263
PAGE.05/06
S
C
Rs
BT151 S
e r
i
e s
S ta nda rd
S CRs
ShenZhenHanKingyuan
Electronic CO.,Ltd
06.
ShenZhenHanKingyuan
Electronic CO.,Ltd
Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�
Electronic assumes no responsibility for the consequences of use of such information nor for any
infringement of patents or other rights of third parties which may result from its use.Specifications
mentioned in this publication are subject to change without notice.This publication supersedes and�
replaces all information previously supplied.�
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�
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