KY-BTA80-1200B

BTA80 S

 

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80A TR

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ShenZhenHanKingyuan  

Electronic CO.,Ltd  

TR

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ShenZhenHanKingyuan  

Electronic CO.,Ltd  

BTA80 S

 

e r

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3

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01.  

1

2

3

ITO-247 Insulated  

FEATURES  

IT(RMS):80A  

VGT: 1.5V  

VDRM VRRM:1200Vand1600V  

APPLICATIONS  

Washing machine,vacuums, massager,solid state relay

，

AC Motor speed regulation and so on.  

Absolute Maximum Ratings

(Tj=25°C unless otherwise specifed)  

Symbol Parameter  

Conditions  

Ratings  

Unit  

V

BTA80-1200B  

1200  

1600  

80  

VDRM  

VRRM  

Repetitive Peak Off-State Voltage  

BTA80-1600B  

IT(RMS)  

ITSM  

I²t  

R.M.S On-State Current  

Surge On-State Current  

I²t for fusing  

ITO-247(Ins) Tc=70°C  

A

A

Tp=20ms  

Tp=10ms  

800  

3200  

2

A²s  

W

A

PG(AV) Average

 

Gate Power Dissipation

 

Tj=125°C  

IGM  

PGM  

Tj  

Peak Gate Current  

Tj=125°C  

8

Peak Gate power  

10  

W

Operating Junction Temperature  

Storage Temperature  

40~125  

40~150  

～

～

°C  

TSTG  

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BTA80 S

 

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02.  

Electrical Characteristics

 

(Tj=25°C unless otherwise specifed)  

Parameter  

Test Conditions  

Value  

Unit  

Symbol  

IDRM  

Tj=25°C  

Tj=125°C  

Tj=25°C  

Tj=125°C  

20  

10  

20  

10  

uA  

mA  

uA  

Repetitive Peak Off-State Current  

IRRM  

Repetitive Peak Reverse Current  

mA  

VTM  

VGT  

Forward “on” voltage  

Gate trigger voltage  

IT=120A, tp=380us,Tj=25°C  

VD=12V ,RL=33Ω  

≤1.6  

≤1.3  

V

V

VD=2/3VDRM Gate Open

，

 

Tj=125

℃

I,II,III,IV  

di/dt  

F=100Hz, IG=2xIGT,

 

tr≤100ns  

100  

A/us  

mA  

IGT  

IH  

Gate trigger current  

Holding current  

I,II,III VD=12V,

 

RL=33Ω  

IT=100mA  

≤50  

≤80  

0.2  

VGD  

Gate non-trigger voltage  

VD=VDRM, TJ=125°C,RL=3.3KΩ  

V

TJ=125°C, VD=2/3VDRM, Gate  

open circuit  

Critical-rate of rise of  

commutation voltage  

dv/dt  

≥1500  

0.35  

V/us  

°C/W  

Rth(j-c) Thermal

 

resistance  

Junction to case

 

ITO-247(Ins)  

FIG1  

FIG2  

RMS on-state current versus case  

temperature  

Maximum power dissipation versus RMS  

on-state current  

T(RMS)  

P(w)  

120  

120  

100  

100  

ITO-247(lns)  

80  

80  

60  

60  

40  

20  

40  

20  

Tc (

℃

)  

I

T(RMS)

(A)  

0

0

0

25  

50  

75  

100  

125  

0

20  

40  

60  

80  

100  

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ShenZhenHanKingyuan  

Electronic CO.,Ltd  

BTA80 S

 

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03.  

FIG3  

FIG4  

Surge peak on-state current versus  

number of cycles  

On-state characteristics (maximum  

values)  

I

TM

(A)  

I

TSM

(A)  

800  

1000  

800  

t=20ms  

One cycle  

Tj=Tjmax  

100  

600  

400  

200  

0

10  

1

Tj=25

℃

 

V

TM

(V)  

Number of cycles  

10 100  

0

1

2

3

4

5

1

1000  

FIG5  

FIG6  

FIG.6:

Relative variations of gate trigger current,  

holding current and latching current versus  

junction temperature  

Non-repetitive surge peak on-state current  

for a sinusoidal pulse with width tp<20ms, and  

2

2

corresponging value of I t (dI/dt < 100A/

μ

s)  

2

2

I

TSM

(A), I t (A s)  

I

GT

,I  

H

,I  

L

(Tj) /I

GT

,I  

H

,I  

L

(Tj=25

℃

)  

20000  

10000  

3.0  

2.5  

2.0  

dI/dt  

I

2

t  

TSM  

I

GT  

I

1.5  

1.0  

I

H

&I

L  

1000  

0.5  

0.0  

Tj (

℃

)  

40 60  

tp(ms)  

100  

0.01  

-40  

-20  

0

20  

80  

100 120

 

140  

0.1  

1

10 20  

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BTA80 S

 

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04.  

PACKAGE MECHANICAL DATA  

Dimensions  

Ref.  

Millimeters  

Typ.  

Inches  

Typ.  

H

A

Min.  

19.7  

26.9  

19.4  

3.80  

2.56  

1.66  

Max.  

20.1  

27.3  

20.4  

4.00  

2.76  

1.86  

Min.  

0.776  

1.059  

0.764  

0.150  

0.101  

Max.  

J

ΦN  

19.9  

27.1  

19.9  

3.90  

2.66  

1.76  

5.45  

5.10  

1.50  

2.30  

0.70  

21.3  

3.30  

0.783 0.791  

1.067 1.075  

0.783 0.803  

0.154 0.157  

0.105 0.109  

A

B

C

D

E

F

0.065 0.069 0.073  

0.215  

K

G

H

J

E

5.05  

1.45  

2.20  

0.60  

21.2  

3.20  

5.50  

1.55  

2.40  

0.80  

21.4  

3.40  

0.199  

0.057  

0.201 0.217  

0.059 0.061  

K

L

0.087 0.091 0.094  

F

G

L

0.024  

0.835  

0.028 0.031  

0.839 0.843  

M

N

0.126 0.130 0.134  

ITO-247

（

Ins

）  

PAGE.04/05  

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05.  

ShenZhenHanKingyuan  

Electronic CO.,Ltd  

Information furnished is believed to be accurate and reliable.However,Shenzhen�HanKingyuan�  

Electronic assumes no responsibility for the consequences of use of such information nor for any  

infringement of patents or other rights of third parties which may result from its use.Specifications  

mentioned in this publication are subject to change without notice.This publication supersedes and�  

replaces all information previously supplied.�  

The KY logo is a registered trademark of Shenzhen HanKingyuan Electronic。  

�

©

2013 Shenzhen HanKingyuan Electronic –

 

Printed in Shenzhen – All Rights Reserved�  

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